GB942135A - Improvements in and relating to the manufacture of semiconductor devices - Google Patents

Improvements in and relating to the manufacture of semiconductor devices

Info

Publication number
GB942135A
GB942135A GB1532/60A GB153260A GB942135A GB 942135 A GB942135 A GB 942135A GB 1532/60 A GB1532/60 A GB 1532/60A GB 153260 A GB153260 A GB 153260A GB 942135 A GB942135 A GB 942135A
Authority
GB
United Kingdom
Prior art keywords
sheet
housing
liquid
drops
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1532/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Space Systems Loral LLC
Original Assignee
Philco Ford Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philco Ford Corp filed Critical Philco Ford Corp
Publication of GB942135A publication Critical patent/GB942135A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electroplating Methods And Accessories (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

<PICT:0942135/C3/1> <PICT:0942135/C3/2> A method of treating, e.g. etching or plating, the surface 32 of a semi-conductor 23 comprises directing a jet 27 of a liquid against a portion 31 of the surface so as to form a sheet of liquid 33 flowing outwardly away from the portion 31 and breaking up into drops 36 in a region 35 remote from the portion 31, and directing a current of gas, e.g. air, across the sheet 33 with such a velocity as to carry the drops 36 away from the region 35 without reversing the flow of liquid in the sheet 33. The semi-conductor 23 is mounted in a closed-ended housing 10 the other end of which is connected to an air pump which discharges into a reservoir from which liquid is pumped to a nozzle 20. The housing 10 may be transparent and be illuminated from directions 25, 26. An air current 37 is drawn in at 29 and traverses the sheet 33 diametrically, removing the drops 36 mainly from an arc of the periphery 34 of the sheet 33 located downstream of the portion 31, the speeds of the pumps being suitably adjusted. In the modification, Fig. 5 (not shown), the workpiece 23 is introduced longitudinally into the end of the housing 10, which is open at both ends, and opposed jets of liquid are delivered radially into the housing. In another modification, Fig. 6, the workpiece 23 is supported transversely of the housing 70 and a jet 75 is delivered normal to the workpiece 23 and axially of the housing 70 which is again open at both ends, the air stream 81 carrying the drops 78 from the periphery 80 of the sheet 79. An electrode may contact the liquid where electrolytic etching or plating is required.
GB1532/60A 1959-01-16 1960-01-15 Improvements in and relating to the manufacture of semiconductor devices Expired GB942135A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US787303A US3039514A (en) 1959-01-16 1959-01-16 Fabrication of semiconductor devices

Publications (1)

Publication Number Publication Date
GB942135A true GB942135A (en) 1963-11-20

Family

ID=25141052

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1532/60A Expired GB942135A (en) 1959-01-16 1960-01-15 Improvements in and relating to the manufacture of semiconductor devices

Country Status (2)

Country Link
US (1) US3039514A (en)
GB (1) GB942135A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086126A (en) * 1977-05-27 1978-04-25 Northern Telecom Limited Production of high radiance light emitting diodes

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1464404A (en) * 1974-11-06 1977-02-16 Rolls Royce Electrical leakage control in electrochemical machine tools electrolyte drains systems
DE2705158C2 (en) * 1977-02-04 1986-02-27 Schering AG, 1000 Berlin und 4709 Bergkamen Partial plating process
JPS56102590A (en) * 1979-08-09 1981-08-17 Koichi Shimamura Method and device for plating of microarea
US4359360A (en) * 1981-12-10 1982-11-16 The United States Of America As Represented By The Secretary Of The Air Force Apparatus for selectively jet etching a plastic encapsulating an article
US5851413A (en) * 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2523018A (en) * 1946-12-12 1950-09-19 Paper Patents Co Method of cylinder etching and machine therefor
US2568803A (en) * 1949-06-09 1951-09-25 Guenst William Etching machine
US2767137A (en) * 1954-07-15 1956-10-16 Philco Corp Method for electrolytic etching
US2799637A (en) * 1954-12-22 1957-07-16 Philco Corp Method for electrolytic etching
US2804405A (en) * 1954-12-24 1957-08-27 Bell Telephone Labor Inc Manufacture of silicon devices
BE564480A (en) * 1955-06-23
BE567337A (en) * 1957-05-02
US3012921A (en) * 1958-08-20 1961-12-12 Philco Corp Controlled jet etching of semiconductor units

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086126A (en) * 1977-05-27 1978-04-25 Northern Telecom Limited Production of high radiance light emitting diodes

Also Published As

Publication number Publication date
US3039514A (en) 1962-06-19

Similar Documents

Publication Publication Date Title
ES8700970A1 (en) Electrostatic spraying apparatus.
GB1493696A (en) Apparatus for producing liquid droplets
ES8507361A1 (en) Electrostatic entrainment pump for a spraying system.
ES8607742A1 (en) Method and apparatus for reducing the gas content of a liquid
ES2039779T3 (en) CLEANING DEVICE.
ES452807A1 (en) Apparatus for the removal of gases, especially air, in fluids
KR930011124A (en) Wafer cross section etching method and etching apparatus
GB942135A (en) Improvements in and relating to the manufacture of semiconductor devices
IT1264669B1 (en) REACTOR FOR THE REMOVAL OF IMPURITIES FROM A LIQUID
GB1530128A (en) Jet pumps and nozzles therefor
IE791651L (en) Dissolving gas in liquid
RU93051362A (en) METHOD OF CUTTING WITH JETS
JPS56154601A (en) Device having self cleaning function for measuring or detecting device
ES2051514T3 (en) CENTRIFUGAL SEPARATOR WITH DEVICE FOR ENERGY TRANSFORMATION.
JPS5262964A (en) Ultrasonic washing apparatus using jet stream
JPS5795808A (en) Generating apparatus for ozone
RU2056123C1 (en) Apparatus for liquid degassing
JPS5658574A (en) Recovering method for floating matter on liquid surface
JPS57154836A (en) Washing method for semiconductor wafer, mask, etc.
GB941136A (en) Process and apparatus for cleaning mercury
JPS57184495A (en) Anaerobic digestion vessel
JPS5471492A (en) Wet type blast nozzle
JPS5787106A (en) Super conductive magnet device
DE3478945D1 (en) Vacuum pump installations supplied by a cooling liquid under constant pressure
ES237785U (en) Injector for high pressure liquid pulverization installations. (Machine-translation by Google Translate, not legally binding)