GB937591A - Improvements in or relating to transistor circuit arrangements - Google Patents

Improvements in or relating to transistor circuit arrangements

Info

Publication number
GB937591A
GB937591A GB7654/61A GB765461A GB937591A GB 937591 A GB937591 A GB 937591A GB 7654/61 A GB7654/61 A GB 7654/61A GB 765461 A GB765461 A GB 765461A GB 937591 A GB937591 A GB 937591A
Authority
GB
United Kingdom
Prior art keywords
zone
collector
base
auxiliary
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7654/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB937591A publication Critical patent/GB937591A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04113—Modifications for accelerating switching without feedback from the output circuit to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
GB7654/61A 1960-03-04 1961-03-02 Improvements in or relating to transistor circuit arrangements Expired GB937591A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES67417A DE1108333B (de) 1960-03-04 1960-03-04 Transistor zum Schalten, insbesondere fuer hoehere Schaltfrequenzen, mit auf gegenueberliegenden Oberflaechen des Halbleiterkoerpers anlegierten Kollektor- und Emitterelektroden

Publications (1)

Publication Number Publication Date
GB937591A true GB937591A (en) 1963-09-25

Family

ID=7499533

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7654/61A Expired GB937591A (en) 1960-03-04 1961-03-02 Improvements in or relating to transistor circuit arrangements

Country Status (5)

Country Link
US (1) US3151254A (cg-RX-API-DMAC10.html)
CH (1) CH399599A (cg-RX-API-DMAC10.html)
DE (1) DE1108333B (cg-RX-API-DMAC10.html)
GB (1) GB937591A (cg-RX-API-DMAC10.html)
NL (1) NL261720A (cg-RX-API-DMAC10.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
GB1053834A (cg-RX-API-DMAC10.html) * 1963-02-01
US3289009A (en) * 1963-05-07 1966-11-29 Ibm Switching circuits employing surface potential controlled semiconductor devices
CH472119A (de) * 1964-11-28 1969-04-30 Licentia Gmbh Steuerbarer Halbleitergleichrichter
NL161923C (nl) * 1969-04-18 1980-03-17 Philips Nv Halfgeleiderinrichting.
DE2344244C3 (de) * 1973-09-01 1982-11-25 Robert Bosch Gmbh, 7000 Stuttgart Laterale Transistorstruktur
FR2321216A1 (fr) * 1975-08-09 1977-03-11 Tokyo Shibaura Electric Co Circuit de porte
DE2656420A1 (de) * 1976-12-13 1978-06-15 Siemens Ag Transistor mit innerer gegenkopplung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
BE541575A (cg-RX-API-DMAC10.html) * 1954-09-27
US3087098A (en) * 1954-10-05 1963-04-23 Motorola Inc Transistor
US2895109A (en) * 1955-06-20 1959-07-14 Bell Telephone Labor Inc Negative resistance semiconductive element
DE1060498B (de) * 1955-09-01 1959-07-02 Deutsche Bundespost Transistor mit teilweise fallender Charakteristik zum Schalten mit kurzen Sprungzeiten
US2994810A (en) * 1955-11-04 1961-08-01 Hughes Aircraft Co Auxiliary emitter transistor
US2882463A (en) * 1955-12-28 1959-04-14 Ibm Multi-collector transistor providing different output impedances, and method of producing same
US2923870A (en) * 1956-06-28 1960-02-02 Honeywell Regulator Co Semiconductor devices
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit

Also Published As

Publication number Publication date
US3151254A (en) 1964-09-29
NL261720A (cg-RX-API-DMAC10.html)
CH399599A (de) 1965-09-30
DE1108333B (de) 1961-06-08

Similar Documents

Publication Publication Date Title
GB748414A (en) Semiconductor signal translating elements and devices utilizing them
US3394268A (en) Logic switching circuit
GB945112A (en) Improvements in or relating to signal translating arrangements using two terminal negative resistance semi-conductive devices
US3060327A (en) Transistor having emitter reversebiased beyond breakdown and collector forward-biased for majority carrier operation
GB1099381A (en) Solid state field-effect devices
GB879977A (en) Improvements in semi-conductor devices
GB1299804A (en) Semiconductor devices
GB871307A (en) Transistor with double collector
GB1251088A (cg-RX-API-DMAC10.html)
GB920630A (en) Improvements in the fabrication of semiconductor elements
GB1452834A (en) Integrated circuit
GB1269235A (en) Monolithic integrated circuit
JPS5679463A (en) Semiconductor integrated circuit
US3151254A (en) Transistor for high frequency switching
GB905945A (en) Improvements in or relating to transistors
US4160918A (en) Integrated logic circuit
GB1462278A (en) Transistor logic circuit
FR1388172A (fr) Dispositif semi-conducteur et montage de circuits
US3091701A (en) High frequency response transistors
GB1505118A (en) Monostable multivibrator circuits
GB761926A (en) Self-powered semiconductive devices
FR1284326A (fr) Convertisseur de fréquence
JPS5333071A (en) Complementary type insulated gate semiconductor circuit
JPS5580352A (en) Transistor with high breakdown voltage
GB1057917A (en) Improvements in switching circuits