GB936831A - Improvements relating to the production of p.n. junctions in semi-conductor material - Google Patents

Improvements relating to the production of p.n. junctions in semi-conductor material

Info

Publication number
GB936831A
GB936831A GB10696/59A GB1069659A GB936831A GB 936831 A GB936831 A GB 936831A GB 10696/59 A GB10696/59 A GB 10696/59A GB 1069659 A GB1069659 A GB 1069659A GB 936831 A GB936831 A GB 936831A
Authority
GB
United Kingdom
Prior art keywords
aluminium
type
regions
region
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10696/59A
Other languages
English (en)
Inventor
Ronald Bullough
Ronald Charles Newman
James Wakefield
Robert Lindsay Rouse
John Bernard Willis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL249774D priority Critical patent/NL249774A/xx
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB10696/59A priority patent/GB936831A/en
Priority to GB13729/59A priority patent/GB936832A/en
Priority to GB17346/59A priority patent/GB936833A/en
Priority to US15934A priority patent/US3154838A/en
Priority to FR822557A priority patent/FR1252421A/fr
Priority to US22637A priority patent/US3129119A/en
Priority to US28644A priority patent/US3128530A/en
Publication of GB936831A publication Critical patent/GB936831A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/033—Diffusion of aluminum
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/922—Diffusion along grain boundaries

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB10696/59A 1959-03-26 1959-03-26 Improvements relating to the production of p.n. junctions in semi-conductor material Expired GB936831A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL249774D NL249774A (enExample) 1959-03-26
GB10696/59A GB936831A (en) 1959-03-26 1959-03-26 Improvements relating to the production of p.n. junctions in semi-conductor material
GB13729/59A GB936832A (en) 1959-03-26 1959-04-22 Improvements relating to the production of p.n. junctions in semi-conductor material
GB17346/59A GB936833A (en) 1959-03-26 1959-05-21 Improvements relating to the production of p.n. junctions in semi-conductor material
US15934A US3154838A (en) 1959-03-26 1960-03-18 Production of p-nu junctions in semiconductor material
FR822557A FR1252421A (fr) 1959-03-26 1960-03-26 Procédé de fabrication de jonctions p-n
US22637A US3129119A (en) 1959-03-26 1960-04-15 Production of p.n. junctions in semiconductor material
US28644A US3128530A (en) 1959-03-26 1960-05-12 Production of p.n. junctions in semiconductor material

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB10696/59A GB936831A (en) 1959-03-26 1959-03-26 Improvements relating to the production of p.n. junctions in semi-conductor material
GB13729/59A GB936832A (en) 1959-03-26 1959-04-22 Improvements relating to the production of p.n. junctions in semi-conductor material
GB17346/59A GB936833A (en) 1959-03-26 1959-05-21 Improvements relating to the production of p.n. junctions in semi-conductor material

Publications (1)

Publication Number Publication Date
GB936831A true GB936831A (en) 1963-09-11

Family

ID=27256563

Family Applications (3)

Application Number Title Priority Date Filing Date
GB10696/59A Expired GB936831A (en) 1959-03-26 1959-03-26 Improvements relating to the production of p.n. junctions in semi-conductor material
GB13729/59A Expired GB936832A (en) 1959-03-26 1959-04-22 Improvements relating to the production of p.n. junctions in semi-conductor material
GB17346/59A Expired GB936833A (en) 1959-03-26 1959-05-21 Improvements relating to the production of p.n. junctions in semi-conductor material

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB13729/59A Expired GB936832A (en) 1959-03-26 1959-04-22 Improvements relating to the production of p.n. junctions in semi-conductor material
GB17346/59A Expired GB936833A (en) 1959-03-26 1959-05-21 Improvements relating to the production of p.n. junctions in semi-conductor material

Country Status (3)

Country Link
US (3) US3154838A (enExample)
GB (3) GB936831A (enExample)
NL (1) NL249774A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB936181A (en) * 1959-05-19 1963-09-04 Nat Res Dev Improvements in and relating to solid-state electrical devices
US3284675A (en) * 1961-04-05 1966-11-08 Gen Electric Semiconductor device including contact and housing structures
US3196327A (en) * 1961-09-19 1965-07-20 Jr Donald C Dickson P-i-n semiconductor with improved breakdown voltage
US3231436A (en) * 1962-03-07 1966-01-25 Nippon Electric Co Method of heat treating semiconductor devices to stabilize current amplification factor characteristic
US3303070A (en) * 1964-04-22 1967-02-07 Westinghouse Electric Corp Simulataneous double diffusion process
JPS5134268B2 (enExample) * 1972-07-13 1976-09-25
US4107724A (en) * 1974-12-17 1978-08-15 U.S. Philips Corporation Surface controlled field effect solid state device
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法
FR2454703B1 (fr) * 1979-04-21 1985-11-15 Nippon Telegraph & Telephone Transistor a effet de champ et procede de fabrication
US4635084A (en) * 1984-06-08 1987-01-06 Eaton Corporation Split row power JFET
JP4183969B2 (ja) * 2002-04-19 2008-11-19 独立行政法人科学技術振興機構 高密度転位を一次元に直線上に配列させた単結晶材料の作製方法
EP1702366A1 (fr) * 2003-12-05 2006-09-20 STMicroelectronics S.A. Composant semiconducteur actif a surface reduite
US7053404B2 (en) * 2003-12-05 2006-05-30 Stmicroelectronics S.A. Active semiconductor component with an optimized surface area
US20050121691A1 (en) * 2003-12-05 2005-06-09 Jean-Luc Morand Active semiconductor component with a reduced surface area

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
NL104654C (enExample) * 1952-12-31 1900-01-01
NL110970C (enExample) * 1954-10-18
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices
US2932594A (en) * 1956-09-17 1960-04-12 Rca Corp Method of making surface alloy junctions in semiconductor bodies
US2954307A (en) * 1957-03-18 1960-09-27 Shockley William Grain boundary semiconductor device and method
US2979427A (en) * 1957-03-18 1961-04-11 Shockley William Semiconductor device and method of making the same
US2900286A (en) * 1957-11-19 1959-08-18 Rca Corp Method of manufacturing semiconductive bodies
US3009841A (en) * 1959-03-06 1961-11-21 Westinghouse Electric Corp Preparation of semiconductor devices having uniform junctions
US2937114A (en) * 1959-05-29 1960-05-17 Shockley Transistor Corp Semiconductive device and method

Also Published As

Publication number Publication date
US3129119A (en) 1964-04-14
NL249774A (enExample)
GB936832A (en) 1963-09-11
GB936833A (en) 1963-09-11
US3128530A (en) 1964-04-14
US3154838A (en) 1964-11-03

Similar Documents

Publication Publication Date Title
GB922617A (en) Semiconductor translating devices and processes for making them
GB936831A (en) Improvements relating to the production of p.n. junctions in semi-conductor material
GB1271035A (en) Processes for forming semiconductor devices and individual semiconductor bodies from a single wafer
GB809521A (en) Fused junction semiconductor devices and method of making the same
GB809642A (en) Improvements in semiconductor devices and methods of making them
GB841195A (en) Improvements in or relating to semi-conductor crystals and processes in the production thereof
US3041213A (en) Diffused junction semiconductor device and method of making
GB842403A (en) Improvements in semiconductor devices and methods of making such devices
GB992963A (en) Semiconductor devices
GB856430A (en) Improvements in and relating to semi-conductive devices
GB753133A (en) Improvements in or relating to electric semi-conducting devices
GB887327A (en) Improvements in transistors
GB994213A (en) Devices for converting solar radiation into electrical energy
US3995309A (en) Isolation junctions for semiconductor devices
US3409482A (en) Method of making a transistor with a very thin diffused base and an epitaxially grown emitter
GB975960A (en) Improvements in or relating to methods of manufacturing semiconductor devices
GB863612A (en) Improvements in and relating to semi-conductive devices
GB951103A (en) Improvements relating to the production of unipolar transistors
JPS6476756A (en) Semiconductor integrated circuit device and manufacture thereof
GB1065951A (en) Improvements in or relating to methods of manufacturing semiconductor devices
JPS5735374A (en) Semiconductor device
JPS55153348A (en) Manufacture of semiconductor device
FR1170560A (fr) Procédé de fabrication d'un système d'électrodes à semi-conducteur
GB1004589A (en) Process of manufacturing a semiconductor element
JPS5621313A (en) Manufacture of semiconductor device