GB933549A - Dielectric coated electrodes - Google Patents
Dielectric coated electrodesInfo
- Publication number
- GB933549A GB933549A GB4101059A GB4101059A GB933549A GB 933549 A GB933549 A GB 933549A GB 4101059 A GB4101059 A GB 4101059A GB 4101059 A GB4101059 A GB 4101059A GB 933549 A GB933549 A GB 933549A
- Authority
- GB
- United Kingdom
- Prior art keywords
- coating
- containing material
- dichlorsilane
- electrode
- ionizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 6
- 239000011248 coating agent Substances 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 4
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- ZFMOJHVRFMOIGF-UHFFFAOYSA-N 2,4,6-trimethoxy-1,3,5,2,4,6-trioxatriborinane Chemical compound COB1OB(OC)OB(OC)O1 ZFMOJHVRFMOIGF-UHFFFAOYSA-N 0.000 abstract 1
- 229910015900 BF3 Inorganic materials 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- OSXYHAQZDCICNX-UHFFFAOYSA-N dichloro(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](Cl)(Cl)C1=CC=CC=C1 OSXYHAQZDCICNX-UHFFFAOYSA-N 0.000 abstract 1
- -1 difluoroethylene, monochlorotrifluoroethylene, dichlordifluorethylene, dimethyl dichlorsilane Chemical class 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 abstract 1
- 229910010272 inorganic material Inorganic materials 0.000 abstract 1
- 239000011147 inorganic material Substances 0.000 abstract 1
- MLSKXPOBNQFGHW-UHFFFAOYSA-N methoxy(dioxido)borane Chemical compound COB([O-])[O-] MLSKXPOBNQFGHW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 abstract 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 abstract 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/085—Vapour deposited
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/52—Polymerisation initiated by wave energy or particle radiation by electric discharge, e.g. voltolisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/145—Organic dielectrics vapour deposited
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77763658A | 1958-12-02 | 1958-12-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB933549A true GB933549A (en) | 1963-08-08 |
Family
ID=25110805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4101059A Expired GB933549A (en) | 1958-12-02 | 1959-12-02 | Dielectric coated electrodes |
Country Status (3)
Country | Link |
---|---|
BE (1) | BE677582A (it) |
CH (1) | CH389776A (it) |
GB (1) | GB933549A (it) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0002889A2 (en) * | 1977-12-23 | 1979-07-11 | International Business Machines Corporation | A method of forming a polymer film |
US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
FR2465587A1 (fr) * | 1979-09-25 | 1981-03-27 | Dukhovskoi Evgeny | Fabrication d'objets en caoutchouc a faible coefficient de frottement, notamment a l'aide de composes organiques fluores et par decharge electrique sous vide |
FR2465761A1 (fr) * | 1979-09-25 | 1981-03-27 | Gorelik Rudolf | Procede de modification de la surface d'objets industriels en caoutchouc |
US4317844A (en) | 1975-07-28 | 1982-03-02 | Rca Corporation | Semiconductor device having a body of amorphous silicon and method of making the same |
US4328258A (en) * | 1977-12-05 | 1982-05-04 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers |
US5073804A (en) * | 1977-12-05 | 1991-12-17 | Plasma Physics Corp. | Method of forming semiconductor materials and barriers |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2029307C3 (de) * | 1970-06-13 | 1975-01-30 | Jenaer Glaswerk Schott & Gen., 6500 Mainz | Verfahren zur Verbesserung der Haftung von im Hochvakuum auf Polymerisat-Formkörper aufgedampften Glasschichten |
DE2625448C3 (de) * | 1976-06-05 | 1986-11-13 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren und Vorrichtung zur Herstellung einer Schutzschicht auf der Oberfläche optischer Reflektoren |
-
1959
- 1959-12-02 GB GB4101059A patent/GB933549A/en not_active Expired
- 1959-12-02 CH CH8138759A patent/CH389776A/de unknown
-
1966
- 1966-03-09 BE BE677582D patent/BE677582A/xx unknown
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4317844A (en) | 1975-07-28 | 1982-03-02 | Rca Corporation | Semiconductor device having a body of amorphous silicon and method of making the same |
US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
US4328258A (en) * | 1977-12-05 | 1982-05-04 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers |
US5073804A (en) * | 1977-12-05 | 1991-12-17 | Plasma Physics Corp. | Method of forming semiconductor materials and barriers |
EP0002889A2 (en) * | 1977-12-23 | 1979-07-11 | International Business Machines Corporation | A method of forming a polymer film |
EP0002889A3 (en) * | 1977-12-23 | 1979-07-25 | International Business Machines Corporation | A method of forming a polymer film |
FR2465587A1 (fr) * | 1979-09-25 | 1981-03-27 | Dukhovskoi Evgeny | Fabrication d'objets en caoutchouc a faible coefficient de frottement, notamment a l'aide de composes organiques fluores et par decharge electrique sous vide |
FR2465761A1 (fr) * | 1979-09-25 | 1981-03-27 | Gorelik Rudolf | Procede de modification de la surface d'objets industriels en caoutchouc |
Also Published As
Publication number | Publication date |
---|---|
BE677582A (it) | 1966-08-01 |
CH389776A (de) | 1965-03-31 |
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