GB9313876D0 - Semiconductor device and method of making same - Google Patents
Semiconductor device and method of making sameInfo
- Publication number
- GB9313876D0 GB9313876D0 GB939313876A GB9313876A GB9313876D0 GB 9313876 D0 GB9313876 D0 GB 9313876D0 GB 939313876 A GB939313876 A GB 939313876A GB 9313876 A GB9313876 A GB 9313876A GB 9313876 D0 GB9313876 D0 GB 9313876D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- making same
- making
- same
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9313876A GB2279806B (en) | 1993-07-05 | 1993-07-05 | Semiconductor device and method of making same |
JP15378494A JPH07142706A (en) | 1993-07-05 | 1994-07-05 | Heterojunction semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9313876A GB2279806B (en) | 1993-07-05 | 1993-07-05 | Semiconductor device and method of making same |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9313876D0 true GB9313876D0 (en) | 1993-08-18 |
GB2279806A GB2279806A (en) | 1995-01-11 |
GB2279806B GB2279806B (en) | 1997-05-21 |
Family
ID=10738322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9313876A Expired - Fee Related GB2279806B (en) | 1993-07-05 | 1993-07-05 | Semiconductor device and method of making same |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH07142706A (en) |
GB (1) | GB2279806B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129696A (en) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
JP4389935B2 (en) * | 2004-09-30 | 2009-12-24 | サンケン電気株式会社 | Semiconductor device |
JP2007329350A (en) * | 2006-06-08 | 2007-12-20 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JP5313457B2 (en) * | 2007-03-09 | 2013-10-09 | パナソニック株式会社 | Nitride semiconductor device and manufacturing method thereof |
US8035927B2 (en) | 2008-01-28 | 2011-10-11 | Hitachi Global Storage Technologies Netherlands B.V. | EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact |
JP2011228720A (en) * | 2011-05-30 | 2011-11-10 | Panasonic Corp | Semiconductor device |
JP5364760B2 (en) * | 2011-07-25 | 2013-12-11 | パナソニック株式会社 | Semiconductor device |
WO2023189048A1 (en) * | 2022-03-29 | 2023-10-05 | ローム株式会社 | Nitride semiconductor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57176772A (en) * | 1981-04-23 | 1982-10-30 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
US4558337A (en) * | 1984-05-30 | 1985-12-10 | Texas Instruments Inc. | Multiple high electron mobility transistor structures without inverted heterojunctions |
NL8500218A (en) * | 1985-01-28 | 1986-08-18 | Philips Nv | SEMICONDUCTOR DEVICE WITH TWO-DIMENSIONAL CARRIER GAS. |
-
1993
- 1993-07-05 GB GB9313876A patent/GB2279806B/en not_active Expired - Fee Related
-
1994
- 1994-07-05 JP JP15378494A patent/JPH07142706A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2279806B (en) | 1997-05-21 |
JPH07142706A (en) | 1995-06-02 |
GB2279806A (en) | 1995-01-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20100705 |