GB923784A - Process for the manufacture of very pure hexachlorodisilane - Google Patents

Process for the manufacture of very pure hexachlorodisilane

Info

Publication number
GB923784A
GB923784A GB2192259A GB2192259A GB923784A GB 923784 A GB923784 A GB 923784A GB 2192259 A GB2192259 A GB 2192259A GB 2192259 A GB2192259 A GB 2192259A GB 923784 A GB923784 A GB 923784A
Authority
GB
United Kingdom
Prior art keywords
si2cl6
sihcl3
diluted
inert gas
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2192259A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of GB923784A publication Critical patent/GB923784A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

Hexachlorodisilane is produced by heating trichloromonosilane vapour to 200 DEG -600 DEG C. and cooling the reaction gases immediately to above 30 DEG C. to condense Si2Cl6. The SiHCl3 may be diluted with inert gas or hydrogen and may <PICT:0923784/III/1> be heated at pressures 1mm. Hg. to several atms. by contact with the surface of hot bodies of silicon, silicon carbide, carbon, graphite, glass, aluminium oxide, quartz, sillimanite, porcelain, metals, alloys, silicides of molybdenum or boron,, or mixtures thereof. Strips, rods, grids, tubes, spirals, or films may be used. Alternatively heating may be by induction. SiHCl3 diluted with H2, N2, or A, is passed at 3 into quartz tube 1 containing graphite rod 2 inductively heated to 600 DEG C. Si2Cl6 is condensed by cooling jacket 10 and coil 4 and flows to flask 5. Gases escape at 6. Unreacted SiHCl3 is evaporated from 5 and returned by inert gas, which may be that from 6, entering through 8, to inlet 3. The Si2Cl6 may be purified by distillation under atmospheric, or sub-atmospheric pressure.
GB2192259A 1958-06-25 1959-06-25 Process for the manufacture of very pure hexachlorodisilane Expired GB923784A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEW23571A DE1082890B (en) 1958-06-25 1958-06-25 Process for the production of high purity silicon hexachloride

Publications (1)

Publication Number Publication Date
GB923784A true GB923784A (en) 1963-04-18

Family

ID=7597613

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2192259A Expired GB923784A (en) 1958-06-25 1959-06-25 Process for the manufacture of very pure hexachlorodisilane

Country Status (2)

Country Link
DE (1) DE1082890B (en)
GB (1) GB923784A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006109427A1 (en) * 2005-04-07 2006-10-19 Toagosei Co., Ltd. Method for purification of disilicon hexachloride and high purity disilicon hexachloride
DE102007000841A1 (en) 2007-10-09 2009-04-16 Wacker Chemie Ag Process for the preparation of high purity hexachlorodisilane

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006109427A1 (en) * 2005-04-07 2006-10-19 Toagosei Co., Ltd. Method for purification of disilicon hexachloride and high purity disilicon hexachloride
EP1867604A1 (en) * 2005-04-07 2007-12-19 Toagosei Co., Ltd. Method for purification of disilicon hexachloride and high purity disilicon hexachloride
EP1867604A4 (en) * 2005-04-07 2010-02-03 Toagosei Co Ltd Method for purification of disilicon hexachloride and high purity disilicon hexachloride
US7740822B2 (en) 2005-04-07 2010-06-22 Toagosei Co., Ltd. Method for purification of disilicon hexachloride and high purity disilicon hexachloride
JP5157441B2 (en) * 2005-04-07 2013-03-06 東亞合成株式会社 Method for purifying disilicon hexachloride
DE102007000841A1 (en) 2007-10-09 2009-04-16 Wacker Chemie Ag Process for the preparation of high purity hexachlorodisilane
WO2009047238A1 (en) 2007-10-09 2009-04-16 Wacker Chemie Ag Process for preparing high-purity hexachlorodisilane
US8551296B2 (en) 2007-10-09 2013-10-08 Wacker Chemie Ag Process for preparing high-purity hexachlorodisilane

Also Published As

Publication number Publication date
DE1082890B (en) 1960-06-09

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