GB923784A - Process for the manufacture of very pure hexachlorodisilane - Google Patents
Process for the manufacture of very pure hexachlorodisilaneInfo
- Publication number
- GB923784A GB923784A GB2192259A GB2192259A GB923784A GB 923784 A GB923784 A GB 923784A GB 2192259 A GB2192259 A GB 2192259A GB 2192259 A GB2192259 A GB 2192259A GB 923784 A GB923784 A GB 923784A
- Authority
- GB
- United Kingdom
- Prior art keywords
- si2cl6
- sihcl3
- diluted
- inert gas
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Hexachlorodisilane is produced by heating trichloromonosilane vapour to 200 DEG -600 DEG C. and cooling the reaction gases immediately to above 30 DEG C. to condense Si2Cl6. The SiHCl3 may be diluted with inert gas or hydrogen and may <PICT:0923784/III/1> be heated at pressures 1mm. Hg. to several atms. by contact with the surface of hot bodies of silicon, silicon carbide, carbon, graphite, glass, aluminium oxide, quartz, sillimanite, porcelain, metals, alloys, silicides of molybdenum or boron,, or mixtures thereof. Strips, rods, grids, tubes, spirals, or films may be used. Alternatively heating may be by induction. SiHCl3 diluted with H2, N2, or A, is passed at 3 into quartz tube 1 containing graphite rod 2 inductively heated to 600 DEG C. Si2Cl6 is condensed by cooling jacket 10 and coil 4 and flows to flask 5. Gases escape at 6. Unreacted SiHCl3 is evaporated from 5 and returned by inert gas, which may be that from 6, entering through 8, to inlet 3. The Si2Cl6 may be purified by distillation under atmospheric, or sub-atmospheric pressure.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEW23571A DE1082890B (en) | 1958-06-25 | 1958-06-25 | Process for the production of high purity silicon hexachloride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB923784A true GB923784A (en) | 1963-04-18 |
Family
ID=7597613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2192259A Expired GB923784A (en) | 1958-06-25 | 1959-06-25 | Process for the manufacture of very pure hexachlorodisilane |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1082890B (en) |
| GB (1) | GB923784A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006109427A1 (en) * | 2005-04-07 | 2006-10-19 | Toagosei Co., Ltd. | Method for purification of disilicon hexachloride and high purity disilicon hexachloride |
| DE102007000841A1 (en) | 2007-10-09 | 2009-04-16 | Wacker Chemie Ag | Process for the preparation of high purity hexachlorodisilane |
-
1958
- 1958-06-25 DE DEW23571A patent/DE1082890B/en active Pending
-
1959
- 1959-06-25 GB GB2192259A patent/GB923784A/en not_active Expired
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006109427A1 (en) * | 2005-04-07 | 2006-10-19 | Toagosei Co., Ltd. | Method for purification of disilicon hexachloride and high purity disilicon hexachloride |
| EP1867604A1 (en) * | 2005-04-07 | 2007-12-19 | Toagosei Co., Ltd. | Method for purification of disilicon hexachloride and high purity disilicon hexachloride |
| EP1867604A4 (en) * | 2005-04-07 | 2010-02-03 | Toagosei Co Ltd | Method for purification of disilicon hexachloride and high purity disilicon hexachloride |
| US7740822B2 (en) | 2005-04-07 | 2010-06-22 | Toagosei Co., Ltd. | Method for purification of disilicon hexachloride and high purity disilicon hexachloride |
| JP5157441B2 (en) * | 2005-04-07 | 2013-03-06 | 東亞合成株式会社 | Method for purifying disilicon hexachloride |
| DE102007000841A1 (en) | 2007-10-09 | 2009-04-16 | Wacker Chemie Ag | Process for the preparation of high purity hexachlorodisilane |
| WO2009047238A1 (en) | 2007-10-09 | 2009-04-16 | Wacker Chemie Ag | Process for preparing high-purity hexachlorodisilane |
| US8551296B2 (en) | 2007-10-09 | 2013-10-08 | Wacker Chemie Ag | Process for preparing high-purity hexachlorodisilane |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1082890B (en) | 1960-06-09 |
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