GB923104A - Improvements in or relating to semiconductive devices - Google Patents
Improvements in or relating to semiconductive devicesInfo
- Publication number
- GB923104A GB923104A GB17134/59A GB1713459A GB923104A GB 923104 A GB923104 A GB 923104A GB 17134/59 A GB17134/59 A GB 17134/59A GB 1713459 A GB1713459 A GB 1713459A GB 923104 A GB923104 A GB 923104A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- zones
- transistor
- current
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 230000000694 effects Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/125—Shapes of junctions between the regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/138—Thyristors having built-in components the built-in components being FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Thyristors (AREA)
- Emergency Protection Circuit Devices (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US737883A US2959504A (en) | 1958-05-26 | 1958-05-26 | Semiconductive current limiters |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB923104A true GB923104A (en) | 1963-04-10 |
Family
ID=24965687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB17134/59A Expired GB923104A (en) | 1958-05-26 | 1959-05-20 | Improvements in or relating to semiconductive devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2959504A (enrdf_load_stackoverflow) |
| JP (1) | JPS374662B1 (enrdf_load_stackoverflow) |
| BE (1) | BE578696A (enrdf_load_stackoverflow) |
| DE (1) | DE1090331B (enrdf_load_stackoverflow) |
| FR (1) | FR1225369A (enrdf_load_stackoverflow) |
| GB (1) | GB923104A (enrdf_load_stackoverflow) |
| NL (1) | NL239104A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3996601A (en) * | 1974-07-15 | 1976-12-07 | Hutson Jerald L | Shorting structure for multilayer semiconductor switching devices |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3146135A (en) * | 1959-05-11 | 1964-08-25 | Clevite Corp | Four layer semiconductive device |
| NL252855A (enrdf_load_stackoverflow) * | 1959-06-23 | |||
| DE1146152B (de) * | 1959-07-07 | 1963-03-28 | Philips Patentverwaltung | Isolatoranordnung aus Isolationsmaterialien mit bevorzugt elektronischer Leitfaehigkeit, insbesondere fuer elektrische Entladungsroehren |
| US3124703A (en) * | 1960-06-13 | 1964-03-10 | Figure | |
| US3195077A (en) * | 1960-09-06 | 1965-07-13 | Westinghouse Electric Corp | Semiconductor multisection r-c filter of tapered monolithic construction having progressively varied values of impedance per section |
| US3200017A (en) * | 1960-09-26 | 1965-08-10 | Gen Electric | Gallium arsenide semiconductor devices |
| US3220380A (en) * | 1961-08-21 | 1965-11-30 | Merck & Co Inc | Deposition chamber including heater element enveloped by a quartz workholder |
| US3237062A (en) * | 1961-10-20 | 1966-02-22 | Westinghouse Electric Corp | Monolithic semiconductor devices |
| US3239728A (en) * | 1962-07-17 | 1966-03-08 | Gen Electric | Semiconductor switch |
| GB1052447A (enrdf_load_stackoverflow) * | 1962-09-15 | |||
| NL300332A (enrdf_load_stackoverflow) * | 1962-11-14 | |||
| US3300694A (en) * | 1962-12-20 | 1967-01-24 | Westinghouse Electric Corp | Semiconductor controlled rectifier with firing pin portion on emitter |
| US3277352A (en) * | 1963-03-14 | 1966-10-04 | Itt | Four layer semiconductor device |
| US3265909A (en) * | 1963-09-03 | 1966-08-09 | Gen Electric | Semiconductor switch comprising a controlled rectifier supplying base drive to a transistor |
| US3284680A (en) * | 1963-11-26 | 1966-11-08 | Gen Electric | Semiconductor switch |
| US3458781A (en) * | 1966-07-18 | 1969-07-29 | Unitrode Corp | High-voltage planar semiconductor devices |
| US4364021A (en) * | 1977-10-07 | 1982-12-14 | General Electric Company | Low voltage varistor configuration |
| SE409789B (sv) * | 1978-01-10 | 1979-09-03 | Ericsson Telefon Ab L M | Overstromsskyddad transistor |
| FR2737343B1 (fr) * | 1995-07-28 | 1997-10-24 | Ferraz | Composant limiteur de courant et procede de realisation |
| DE102005023479B4 (de) * | 2005-05-20 | 2011-06-09 | Infineon Technologies Ag | Thyristor mit Zündstufenstruktur |
| DE102014107040A1 (de) | 2014-05-19 | 2015-11-19 | Epcos Ag | Elektronisches Bauelement und Verfahren zu dessen Herstellung |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE489418A (enrdf_load_stackoverflow) * | 1948-06-26 | |||
| US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
| US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
| US2770761A (en) * | 1954-12-16 | 1956-11-13 | Bell Telephone Labor Inc | Semiconductor translators containing enclosed active junctions |
| US2813048A (en) * | 1954-06-24 | 1957-11-12 | Bell Telephone Labor Inc | Temperature gradient zone-melting |
-
0
- NL NL239104D patent/NL239104A/xx unknown
-
1958
- 1958-05-26 US US737883A patent/US2959504A/en not_active Expired - Lifetime
-
1959
- 1959-05-14 BE BE578696A patent/BE578696A/fr unknown
- 1959-05-16 DE DEW25639A patent/DE1090331B/de active Pending
- 1959-05-19 JP JP1567759A patent/JPS374662B1/ja active Pending
- 1959-05-20 GB GB17134/59A patent/GB923104A/en not_active Expired
- 1959-05-25 FR FR795541A patent/FR1225369A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3996601A (en) * | 1974-07-15 | 1976-12-07 | Hutson Jerald L | Shorting structure for multilayer semiconductor switching devices |
Also Published As
| Publication number | Publication date |
|---|---|
| US2959504A (en) | 1960-11-08 |
| FR1225369A (fr) | 1960-06-30 |
| BE578696A (fr) | 1959-08-31 |
| NL239104A (enrdf_load_stackoverflow) | 1900-01-01 |
| DE1090331B (de) | 1960-10-06 |
| JPS374662B1 (enrdf_load_stackoverflow) | 1962-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB923104A (en) | Improvements in or relating to semiconductive devices | |
| US3204160A (en) | Surface-potential controlled semiconductor device | |
| US2623105A (en) | Semiconductor translating device having controlled gain | |
| US3564356A (en) | High voltage integrated circuit transistor | |
| US4259683A (en) | High switching speed P-N junction devices with recombination means centrally located in high resistivity layer | |
| US4047217A (en) | High-gain, high-voltage transistor for linear integrated circuits | |
| GB921264A (en) | Improvements in and relating to semiconductor devices | |
| US3244949A (en) | Voltage regulator | |
| JPS589366A (ja) | トランジスタ | |
| US3005132A (en) | Transistors | |
| US2993998A (en) | Transistor combinations | |
| US3234441A (en) | Junction transistor | |
| US3114864A (en) | Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions | |
| US3460009A (en) | Constant gain power transistor | |
| GB1000058A (en) | Improvements in or relating to semiconductor devices | |
| US3210563A (en) | Four-layer semiconductor switch with particular configuration exhibiting relatively high turn-off gain | |
| US4032961A (en) | Gate modulated bipolar transistor | |
| US3065392A (en) | Semiconductor devices | |
| US3260900A (en) | Temperature compensating barrier layer semiconductor | |
| US3319138A (en) | Fast switching high current avalanche transistor | |
| US3761326A (en) | Process for making an optimum high gain bandwidth phototransistor structure | |
| US3377526A (en) | Variable gain transistor structure employing base zones of various thicknesses and resistivities | |
| US4067038A (en) | Substrate fed logic and method of fabrication | |
| US3979769A (en) | Gate modulated bipolar transistor | |
| US3162770A (en) | Transistor structure |