GB916385A - Improvements in or relating to methods of producing rods of semi-conductive material - Google Patents
Improvements in or relating to methods of producing rods of semi-conductive materialInfo
- Publication number
- GB916385A GB916385A GB1753459A GB1753459A GB916385A GB 916385 A GB916385 A GB 916385A GB 1753459 A GB1753459 A GB 1753459A GB 1753459 A GB1753459 A GB 1753459A GB 916385 A GB916385 A GB 916385A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- melt
- rate
- type
- level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
In a method of growing a crystalline semiconductor rod containing alternate P and N type zones by withdrawal from a melt containing donor and acceptor impurities, the crystallisation rate is increased suddenly and for a short period to a rate above the intrinsic growth rate between periods in which it is below that rate, by an abrupt upward movement of the rod relative to the level of the melt. The growth rate variation may be enhanced by varying the melt temperature. A corresponding result is achieved in a zone melting process by suddenly moving the zone heating means a short distance towards the untreated part of the rod. In the former process abrupt relative movement may be effected by sudden removal of a body from the melt to lower its level. Normally, in both processes, the material recrystallizing below the intrinsic rate is P type and above it N type. The growth rate slowly reverts to its original level to give a graded resistivity N type zone with its maximum conductivity part adjacent the previously formed P zone. If desired a sharp junction between the N zone and succeeding P zone and a reduction in thickness of the N zone is achieved by melting back part of the latter after temporarily halting recrystallization to remove concentration gradients in the melt.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL228131 | 1958-05-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB916385A true GB916385A (en) | 1963-01-23 |
Family
ID=19751222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1753459A Expired GB916385A (en) | 1958-05-27 | 1959-05-22 | Improvements in or relating to methods of producing rods of semi-conductive material |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1225341A (en) |
| GB (1) | GB916385A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3049376A1 (en) * | 1980-12-29 | 1982-07-29 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | METHOD FOR PRODUCING VERTICAL PN TRANSITIONS WHEN DRAWING SILICO DISC FROM A SILICONE MELT |
-
1959
- 1959-05-22 GB GB1753459A patent/GB916385A/en not_active Expired
- 1959-05-25 FR FR795487A patent/FR1225341A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1225341A (en) | 1960-06-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3031275A (en) | Process for growing single crystals | |
| US2904512A (en) | Growth of uniform composition semiconductor crystals | |
| GB1311028A (en) | Producing monocrystals | |
| US3002821A (en) | Means for continuous fabrication of graded junction transistors | |
| US2743200A (en) | Method of forming junctions in silicon | |
| GB916385A (en) | Improvements in or relating to methods of producing rods of semi-conductive material | |
| US3192082A (en) | Process for the production of npn or pnp junction | |
| US3977934A (en) | Silicon manufacture | |
| US2970111A (en) | Method of producing a rod of lowohmic semiconductor material | |
| GB843800A (en) | Improvements in or relating to methods of treating bodies of material so as to controla solid-liquid interface therein | |
| GB1079870A (en) | A method of melting a rod of crystalline material zone-by-zone | |
| US3454367A (en) | Method of crucible-free zone melting of semiconductor material,particularly silicon | |
| GB1336672A (en) | Methods of epitaxially depositing a semiconductor compound | |
| ES258156A1 (en) | Method and means for growing and treating crystals | |
| GB1045664A (en) | A process for melting a rod of polycrystalline material zone-by-zone | |
| US2999776A (en) | Method of producing differentiated doping zones in semiconductor crystals | |
| US3960511A (en) | Zone melting process | |
| US3649210A (en) | Apparatus for crucible-free zone-melting of crystalline materials | |
| GB894739A (en) | Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting | |
| FR2555201B1 (en) | PROCESS AND PLANT FOR PRODUCING CRYSTALLIZED MONOHYDRATE DEXTROSE | |
| GB813600A (en) | Improved method of manufacturing semiconductor crystals | |
| GB967933A (en) | Improvements in or relating to methods of preparing crystalline silicon carbide | |
| GB1394276A (en) | Crystal growing | |
| GB843467A (en) | Improvements in and relating to semiconductor p-n junction units | |
| Ben-Sira et al. | Spontaneous generation of dislocations during growth of silicon single crystals |