GB916385A - Improvements in or relating to methods of producing rods of semi-conductive material - Google Patents

Improvements in or relating to methods of producing rods of semi-conductive material

Info

Publication number
GB916385A
GB916385A GB1753459A GB1753459A GB916385A GB 916385 A GB916385 A GB 916385A GB 1753459 A GB1753459 A GB 1753459A GB 1753459 A GB1753459 A GB 1753459A GB 916385 A GB916385 A GB 916385A
Authority
GB
United Kingdom
Prior art keywords
zone
melt
rate
type
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1753459A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB916385A publication Critical patent/GB916385A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

In a method of growing a crystalline semiconductor rod containing alternate P and N type zones by withdrawal from a melt containing donor and acceptor impurities, the crystallisation rate is increased suddenly and for a short period to a rate above the intrinsic growth rate between periods in which it is below that rate, by an abrupt upward movement of the rod relative to the level of the melt. The growth rate variation may be enhanced by varying the melt temperature. A corresponding result is achieved in a zone melting process by suddenly moving the zone heating means a short distance towards the untreated part of the rod. In the former process abrupt relative movement may be effected by sudden removal of a body from the melt to lower its level. Normally, in both processes, the material recrystallizing below the intrinsic rate is P type and above it N type. The growth rate slowly reverts to its original level to give a graded resistivity N type zone with its maximum conductivity part adjacent the previously formed P zone. If desired a sharp junction between the N zone and succeeding P zone and a reduction in thickness of the N zone is achieved by melting back part of the latter after temporarily halting recrystallization to remove concentration gradients in the melt.
GB1753459A 1958-05-27 1959-05-22 Improvements in or relating to methods of producing rods of semi-conductive material Expired GB916385A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL228131 1958-05-27

Publications (1)

Publication Number Publication Date
GB916385A true GB916385A (en) 1963-01-23

Family

ID=19751222

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1753459A Expired GB916385A (en) 1958-05-27 1959-05-22 Improvements in or relating to methods of producing rods of semi-conductive material

Country Status (2)

Country Link
FR (1) FR1225341A (en)
GB (1) GB916385A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3049376A1 (en) * 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen METHOD FOR PRODUCING VERTICAL PN TRANSITIONS WHEN DRAWING SILICO DISC FROM A SILICONE MELT

Also Published As

Publication number Publication date
FR1225341A (en) 1960-06-30

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