GB915882A - Improvements in or relating to processes for the production of mono-crystalline semi-conductor rods - Google Patents
Improvements in or relating to processes for the production of mono-crystalline semi-conductor rodsInfo
- Publication number
- GB915882A GB915882A GB11111/60A GB1111160A GB915882A GB 915882 A GB915882 A GB 915882A GB 11111/60 A GB11111/60 A GB 11111/60A GB 1111160 A GB1111160 A GB 1111160A GB 915882 A GB915882 A GB 915882A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- production
- seed
- mono
- relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES62679A DE1109141B (de) | 1959-04-22 | 1959-04-22 | Verfahren zur Herstellung eines einkristallinen hochgereinigten Halbleiterstabes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB915882A true GB915882A (en) | 1963-01-16 |
Family
ID=7495799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB11111/60A Expired GB915882A (en) | 1959-04-22 | 1960-03-29 | Improvements in or relating to processes for the production of mono-crystalline semi-conductor rods |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE589911A (forum.php) |
| CH (1) | CH382296A (forum.php) |
| DE (1) | DE1109141B (forum.php) |
| FR (1) | FR1254723A (forum.php) |
| GB (1) | GB915882A (forum.php) |
| NL (1) | NL108954C (forum.php) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3989468A (en) * | 1973-11-22 | 1976-11-02 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| USRE29824E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US4886647A (en) * | 1987-04-27 | 1989-12-12 | Shin-Etsu Handotai Co., Ltd. | Supporting apparatus for semiconductor crystal rod |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL285816A (forum.php) * | 1962-01-26 |
-
0
- NL NL108954D patent/NL108954C/xx active
-
1959
- 1959-04-22 DE DES62679A patent/DE1109141B/de active Pending
-
1960
- 1960-01-22 CH CH76060A patent/CH382296A/de unknown
- 1960-03-29 GB GB11111/60A patent/GB915882A/en not_active Expired
- 1960-04-20 BE BE589911A patent/BE589911A/fr unknown
- 1960-04-21 FR FR824942A patent/FR1254723A/fr not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3989468A (en) * | 1973-11-22 | 1976-11-02 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| USRE29824E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US4886647A (en) * | 1987-04-27 | 1989-12-12 | Shin-Etsu Handotai Co., Ltd. | Supporting apparatus for semiconductor crystal rod |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1109141B (de) | 1961-06-22 |
| NL108954C (forum.php) | |
| BE589911A (fr) | 1960-10-20 |
| CH382296A (de) | 1964-09-30 |
| FR1254723A (fr) | 1961-02-24 |
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