GB9126379D0 - Conductivity modulation type mosfet - Google Patents
Conductivity modulation type mosfetInfo
- Publication number
- GB9126379D0 GB9126379D0 GB919126379A GB9126379A GB9126379D0 GB 9126379 D0 GB9126379 D0 GB 9126379D0 GB 919126379 A GB919126379 A GB 919126379A GB 9126379 A GB9126379 A GB 9126379A GB 9126379 D0 GB9126379 D0 GB 9126379D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- type mosfet
- modulation type
- conductivity modulation
- conductivity
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP40259790A JPH04216675A (en) | 1990-12-17 | 1990-12-17 | Conductivity modulation type mosfet |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9126379D0 true GB9126379D0 (en) | 1992-02-12 |
GB2251124A GB2251124A (en) | 1992-06-24 |
GB2251124B GB2251124B (en) | 1994-09-28 |
Family
ID=18512394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9126379A Expired - Fee Related GB2251124B (en) | 1990-12-17 | 1991-12-12 | Conductivity modulation type mosfet |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH04216675A (en) |
DE (1) | DE4141495A1 (en) |
GB (1) | GB2251124B (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02163974A (en) * | 1988-12-16 | 1990-06-25 | Mitsubishi Electric Corp | Insulated-gate type bipolar transistor and its manufacture |
-
1990
- 1990-12-17 JP JP40259790A patent/JPH04216675A/en active Pending
-
1991
- 1991-12-12 GB GB9126379A patent/GB2251124B/en not_active Expired - Fee Related
- 1991-12-16 DE DE19914141495 patent/DE4141495A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2251124B (en) | 1994-09-28 |
GB2251124A (en) | 1992-06-24 |
DE4141495A1 (en) | 1992-06-25 |
JPH04216675A (en) | 1992-08-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
746 | Register noted 'licences of right' (sect. 46/1977) |
Effective date: 20030912 |
|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20091212 |