GB2251124B - Conductivity modulation type mosfet - Google Patents

Conductivity modulation type mosfet

Info

Publication number
GB2251124B
GB2251124B GB9126379A GB9126379A GB2251124B GB 2251124 B GB2251124 B GB 2251124B GB 9126379 A GB9126379 A GB 9126379A GB 9126379 A GB9126379 A GB 9126379A GB 2251124 B GB2251124 B GB 2251124B
Authority
GB
United Kingdom
Prior art keywords
type mosfet
modulation type
conductivity modulation
conductivity
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9126379A
Other versions
GB2251124A (en
GB9126379D0 (en
Inventor
Yasukazu Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of GB9126379D0 publication Critical patent/GB9126379D0/en
Publication of GB2251124A publication Critical patent/GB2251124A/en
Application granted granted Critical
Publication of GB2251124B publication Critical patent/GB2251124B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB9126379A 1990-12-17 1991-12-12 Conductivity modulation type mosfet Expired - Fee Related GB2251124B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP40259790A JPH04216675A (en) 1990-12-17 1990-12-17 Conductivity modulation type mosfet

Publications (3)

Publication Number Publication Date
GB9126379D0 GB9126379D0 (en) 1992-02-12
GB2251124A GB2251124A (en) 1992-06-24
GB2251124B true GB2251124B (en) 1994-09-28

Family

ID=18512394

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9126379A Expired - Fee Related GB2251124B (en) 1990-12-17 1991-12-12 Conductivity modulation type mosfet

Country Status (3)

Country Link
JP (1) JPH04216675A (en)
DE (1) DE4141495A1 (en)
GB (1) GB2251124B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990975A (en) * 1988-12-16 1991-02-05 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990975A (en) * 1988-12-16 1991-02-05 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same

Also Published As

Publication number Publication date
JPH04216675A (en) 1992-08-06
GB2251124A (en) 1992-06-24
DE4141495A1 (en) 1992-06-25
GB9126379D0 (en) 1992-02-12

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 20030912

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20091212