GB911292A - Improvements in and relating to semi-conductor devices - Google Patents
Improvements in and relating to semi-conductor devicesInfo
- Publication number
- GB911292A GB911292A GB1561/58A GB156158A GB911292A GB 911292 A GB911292 A GB 911292A GB 1561/58 A GB1561/58 A GB 1561/58A GB 156158 A GB156158 A GB 156158A GB 911292 A GB911292 A GB 911292A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- semi
- conductor
- type
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 229910052787 antimony Inorganic materials 0.000 abstract 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910000846 In alloy Inorganic materials 0.000 abstract 1
- 229910000978 Pb alloy Inorganic materials 0.000 abstract 1
- 239000004793 Polystyrene Substances 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229920002223 polystyrene Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002002 slurry Substances 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL235051D NL235051A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) | 1958-01-16 | ||
| BE574814D BE574814A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) | 1958-01-16 | ||
| NL121250D NL121250C (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) | 1958-01-16 | ||
| GB1561/58A GB911292A (en) | 1958-01-16 | 1958-01-16 | Improvements in and relating to semi-conductor devices |
| CH6825259A CH370165A (de) | 1958-01-16 | 1959-01-13 | Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors |
| DEN16116A DE1090770B (de) | 1958-01-16 | 1959-01-14 | Verfahren zur Herstellung einer Halbleiteranordnung mit nahe nebeneinander liegenden aufgeschmolzenen Elektroden |
| US787195A US3069297A (en) | 1958-01-16 | 1959-01-16 | Semi-conductor devices |
| FR784224A FR1225692A (fr) | 1958-01-16 | 1959-01-16 | Procédé de fabrication d'un système d'électrodes à semi-conducteur, notamment d'un transistron |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1561/58A GB911292A (en) | 1958-01-16 | 1958-01-16 | Improvements in and relating to semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB911292A true GB911292A (en) | 1962-11-21 |
Family
ID=9724105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1561/58A Expired GB911292A (en) | 1958-01-16 | 1958-01-16 | Improvements in and relating to semi-conductor devices |
Country Status (7)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1232269B (de) * | 1963-08-23 | 1967-01-12 | Telefunken Patent | Diffusions-Verfahren zum Herstellen eines Halbleiterbauelementes mit Emitter-, Basis- und Kollektorzone |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL264084A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) * | 1959-06-23 | |||
| US3276925A (en) * | 1959-12-12 | 1966-10-04 | Nippon Electric Co | Method of producing tunnel diodes by double alloying |
| NL121714C (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) * | 1959-12-14 | |||
| BE627004A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) * | 1962-01-12 | |||
| US3243325A (en) * | 1962-06-09 | 1966-03-29 | Fujitsu Ltd | Method of producing a variable-capacitance germanium diode and product produced thereby |
| GB1074285A (en) * | 1963-01-09 | 1967-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
| DE1215754B (de) * | 1964-02-24 | 1966-05-05 | Danfoss As | Elektronischer Schalter |
| US3335038A (en) | 1964-03-30 | 1967-08-08 | Ibm | Methods of producing single crystals on polycrystalline substrates and devices using same |
| DE1614861C3 (de) * | 1967-09-01 | 1982-03-11 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors |
| US3955270A (en) * | 1973-08-31 | 1976-05-11 | Bell Telephone Laboratories, Incorporated | Methods for making semiconductor devices |
| US3905162A (en) * | 1974-07-23 | 1975-09-16 | Silicon Material Inc | Method of preparing high yield semiconductor wafer |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2865082A (en) * | 1953-07-16 | 1958-12-23 | Sylvania Electric Prod | Semiconductor mount and method |
| BE533946A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) * | 1953-12-09 | |||
| BE548647A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) * | 1955-06-28 | |||
| DE1073111B (de) * | 1954-12-02 | 1960-01-14 | Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen | Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper |
| NL111788C (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) * | 1956-06-18 |
-
0
- NL NL121250D patent/NL121250C/xx active
- BE BE574814D patent/BE574814A/xx unknown
- NL NL235051D patent/NL235051A/xx unknown
-
1958
- 1958-01-16 GB GB1561/58A patent/GB911292A/en not_active Expired
-
1959
- 1959-01-13 CH CH6825259A patent/CH370165A/de unknown
- 1959-01-14 DE DEN16116A patent/DE1090770B/de active Pending
- 1959-01-16 US US787195A patent/US3069297A/en not_active Expired - Lifetime
- 1959-01-16 FR FR784224A patent/FR1225692A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1232269B (de) * | 1963-08-23 | 1967-01-12 | Telefunken Patent | Diffusions-Verfahren zum Herstellen eines Halbleiterbauelementes mit Emitter-, Basis- und Kollektorzone |
Also Published As
| Publication number | Publication date |
|---|---|
| CH370165A (de) | 1963-06-30 |
| DE1090770B (de) | 1960-10-13 |
| NL121250C (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) | |
| BE574814A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) | |
| US3069297A (en) | 1962-12-18 |
| NL235051A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) | |
| FR1225692A (fr) | 1960-07-04 |
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