GB9112485D0 - A monolithic semiconductor component for transient voltage suppression - Google Patents

A monolithic semiconductor component for transient voltage suppression

Info

Publication number
GB9112485D0
GB9112485D0 GB919112485A GB9112485A GB9112485D0 GB 9112485 D0 GB9112485 D0 GB 9112485D0 GB 919112485 A GB919112485 A GB 919112485A GB 9112485 A GB9112485 A GB 9112485A GB 9112485 D0 GB9112485 D0 GB 9112485D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor component
transient voltage
voltage suppression
monolithic semiconductor
monolithic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB919112485A
Other versions
GB2256744A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Ltd
Original Assignee
Texas Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Ltd filed Critical Texas Instruments Ltd
Priority to GB9112485A priority Critical patent/GB2256744A/en
Publication of GB9112485D0 publication Critical patent/GB9112485D0/en
Priority to PCT/GB1992/001055 priority patent/WO1992022926A1/en
Publication of GB2256744A publication Critical patent/GB2256744A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
GB9112485A 1991-06-11 1991-06-11 A monolithic semiconductor component for transient voltage suppression Withdrawn GB2256744A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9112485A GB2256744A (en) 1991-06-11 1991-06-11 A monolithic semiconductor component for transient voltage suppression
PCT/GB1992/001055 WO1992022926A1 (en) 1991-06-11 1992-06-11 A monolithic semiconductor component for transient voltage suppression

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9112485A GB2256744A (en) 1991-06-11 1991-06-11 A monolithic semiconductor component for transient voltage suppression

Publications (2)

Publication Number Publication Date
GB9112485D0 true GB9112485D0 (en) 1991-07-31
GB2256744A GB2256744A (en) 1992-12-16

Family

ID=10696422

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9112485A Withdrawn GB2256744A (en) 1991-06-11 1991-06-11 A monolithic semiconductor component for transient voltage suppression

Country Status (2)

Country Link
GB (1) GB2256744A (en)
WO (1) WO1992022926A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2293484B (en) * 1994-09-08 1998-08-19 Texas Instruments Ltd Improved lightning overvoltage protector

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3584270A (en) * 1968-03-13 1971-06-08 Westinghouse Electric Corp High speed switching rectifier
DK139798C (en) * 1973-12-03 1979-09-17 Licentia Gmbh THYRISTOR WITH MONOLITIC INTEGRATED DIODE AND METHOD OF MANUFACTURE THEREOF
US4106048A (en) * 1977-04-27 1978-08-08 Rca Corp. Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor
JPS54141853A (en) * 1978-04-26 1979-11-05 Kanto Leather Method of making sheet with embossing pattern
SE414357B (en) * 1978-08-17 1980-07-21 Asea Ab OVERVOLTAGE PROTECTION FOR PROTECTION OF SEMICONDUCTOR COMPONENTS OF LOW EFFECT TYPE
JPS58212175A (en) * 1982-06-02 1983-12-09 Toshiba Corp Manufacture of semiconductor device
FR2613131B1 (en) * 1987-03-27 1989-07-28 Thomson Csf INTEGRATED CIRCUIT PROTECTED AGAINST OVERVOLTAGES
GB2208257B (en) * 1987-07-16 1990-11-21 Texas Instruments Ltd Overvoltage protector
JPH01218066A (en) * 1988-02-26 1989-08-31 Nec Corp Semiconductor device
FR2664760B1 (en) * 1990-07-13 1996-09-27 Sgs Thomson Microelectronics DEVICE FOR PROTECTION AGAINST OVERVOLTAGES AND ITS MONOLITHIC IMPLEMENTATION.
FR2664744B1 (en) * 1990-07-16 1993-08-06 Sgs Thomson Microelectronics PIN DIODE WITH LOW INITIAL SURGE.

Also Published As

Publication number Publication date
WO1992022926A1 (en) 1992-12-23
GB2256744A (en) 1992-12-16

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)