GB899919A - Improvements in semi-conductive devices - Google Patents
Improvements in semi-conductive devicesInfo
- Publication number
- GB899919A GB899919A GB2982/59A GB298259A GB899919A GB 899919 A GB899919 A GB 899919A GB 2982/59 A GB2982/59 A GB 2982/59A GB 298259 A GB298259 A GB 298259A GB 899919 A GB899919 A GB 899919A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- central
- pit
- junction
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015556 catabolic process Effects 0.000 abstract 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL237230D NL237230A (enrdf_load_stackoverflow) | 1958-03-19 | ||
| GB2982/59A GB899919A (en) | 1958-03-19 | 1959-01-27 | Improvements in semi-conductive devices |
| DES61697A DE1090330B (de) | 1958-03-19 | 1959-02-09 | Halbleiteranordnung mit einem Halbleiterkoerper mit zwei Zonen entgegengesetzten Leitfaehigkeitstyps und je einer Elektrode an den beiden Zonen |
| FR787834A FR1229784A (fr) | 1958-03-19 | 1959-02-26 | Dispositif semi-conducteur |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1229784XA | 1958-03-19 | 1958-03-19 | |
| GB2982/59A GB899919A (en) | 1958-03-19 | 1959-01-27 | Improvements in semi-conductive devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB899919A true GB899919A (en) | 1962-06-27 |
Family
ID=9749687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2982/59A Expired GB899919A (en) | 1958-03-19 | 1959-01-27 | Improvements in semi-conductive devices |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1090330B (enrdf_load_stackoverflow) |
| FR (1) | FR1229784A (enrdf_load_stackoverflow) |
| GB (1) | GB899919A (enrdf_load_stackoverflow) |
| NL (1) | NL237230A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1185729B (de) * | 1961-03-01 | 1965-01-21 | Siemens Ag | Esaki-Diode mit Oberflaechenschutz des pn-UEbergangs |
| NL275617A (enrdf_load_stackoverflow) * | 1961-03-10 | |||
| NL277811A (enrdf_load_stackoverflow) * | 1961-04-27 | 1900-01-01 | ||
| US3152928A (en) * | 1961-05-18 | 1964-10-13 | Clevite Corp | Semiconductor device and method |
| DE1208408B (de) * | 1961-06-05 | 1966-01-05 | Gen Electric | Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps |
| DE1300164B (de) * | 1967-01-26 | 1969-07-31 | Itt Ind Gmbh Deutsche | Verfahren zum Herstellen von Zenerdioden |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1000115B (de) * | 1954-03-03 | 1957-01-03 | Standard Elektrik Ag | Verfahren zur Herstellung von Halbleiterschichtkristallen mit PN-UEbergang |
| US2770761A (en) * | 1954-12-16 | 1956-11-13 | Bell Telephone Labor Inc | Semiconductor translators containing enclosed active junctions |
| US2813048A (en) * | 1954-06-24 | 1957-11-12 | Bell Telephone Labor Inc | Temperature gradient zone-melting |
| US2792540A (en) * | 1955-08-04 | 1957-05-14 | Bell Telephone Labor Inc | Junction transistor |
-
0
- NL NL237230D patent/NL237230A/xx unknown
-
1959
- 1959-01-27 GB GB2982/59A patent/GB899919A/en not_active Expired
- 1959-02-09 DE DES61697A patent/DE1090330B/de active Pending
- 1959-02-26 FR FR787834A patent/FR1229784A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1090330B (de) | 1960-10-06 |
| NL237230A (enrdf_load_stackoverflow) | |
| FR1229784A (fr) | 1960-09-09 |
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