GB893879A - A power transistor - Google Patents
A power transistorInfo
- Publication number
- GB893879A GB893879A GB1687560A GB1687560A GB893879A GB 893879 A GB893879 A GB 893879A GB 1687560 A GB1687560 A GB 1687560A GB 1687560 A GB1687560 A GB 1687560A GB 893879 A GB893879 A GB 893879A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- gold
- type
- emitter
- power transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 239000005030 aluminium foil Substances 0.000 abstract 1
- OPEKUPPJGIMIDT-UHFFFAOYSA-N boron gold Chemical compound [B].[Au] OPEKUPPJGIMIDT-UHFFFAOYSA-N 0.000 abstract 1
- -1 gold-aluminium Chemical compound 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES62962A DE1104072B (de) | 1959-05-12 | 1959-05-12 | Legierungstransistor mit einem scheibenfoermigen einkristallinen Halbleiterkoerper aus Silizium und Verfahren zu seiner Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB893879A true GB893879A (en) | 1962-04-18 |
Family
ID=7496008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1687560A Expired GB893879A (en) | 1959-05-12 | 1960-05-12 | A power transistor |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE590761A (de) |
| CH (1) | CH382298A (de) |
| DE (1) | DE1104072B (de) |
| GB (1) | GB893879A (de) |
| NL (1) | NL251527A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE636316A (de) * | 1962-08-23 | 1900-01-01 | ||
| GB1051720A (de) * | 1963-03-07 | 1900-01-01 | ||
| GB1025453A (en) * | 1964-01-29 | 1966-04-06 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE489418A (de) * | 1948-06-26 | |||
| DE1007438B (de) * | 1952-06-13 | 1957-05-02 | Rca Corp | Flaechentransistor nach dem Legierungsprinzip |
| DE1018556B (de) * | 1954-07-19 | 1957-10-31 | Philips Nv | Transistor |
| GB807995A (en) * | 1955-09-02 | 1959-01-28 | Gen Electric Co Ltd | Improvements in or relating to the production of semiconductor bodies |
-
0
- NL NL251527D patent/NL251527A/xx unknown
-
1959
- 1959-05-12 DE DES62962A patent/DE1104072B/de active Pending
-
1960
- 1960-04-20 CH CH440760A patent/CH382298A/de unknown
- 1960-05-12 BE BE590761A patent/BE590761A/fr unknown
- 1960-05-12 GB GB1687560A patent/GB893879A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH382298A (de) | 1964-09-30 |
| NL251527A (de) | |
| BE590761A (fr) | 1960-11-14 |
| DE1104072B (de) | 1961-04-06 |
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