GB878096A - Selenides of copper zinc and cadmium - Google Patents

Selenides of copper zinc and cadmium

Info

Publication number
GB878096A
GB878096A GB1163/58A GB116358A GB878096A GB 878096 A GB878096 A GB 878096A GB 1163/58 A GB1163/58 A GB 1163/58A GB 116358 A GB116358 A GB 116358A GB 878096 A GB878096 A GB 878096A
Authority
GB
United Kingdom
Prior art keywords
zinc
selenite
selenide
cadmium
ammine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1163/58A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck and Co Inc
Original Assignee
Merck and Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck and Co Inc filed Critical Merck and Co Inc
Publication of GB878096A publication Critical patent/GB878096A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/002Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/007Tellurides or selenides of metals
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/082Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/16Hydrazine; Salts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/18Luminescent screens
    • H01J29/20Luminescent screens characterised by the luminescent material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Luminescent Compositions (AREA)
GB1163/58A 1957-01-31 1958-01-13 Selenides of copper zinc and cadmium Expired GB878096A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US637357A US2921834A (en) 1957-01-31 1957-01-31 Process for preparing metal selenides

Publications (1)

Publication Number Publication Date
GB878096A true GB878096A (en) 1961-09-27

Family

ID=24555581

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1163/58A Expired GB878096A (en) 1957-01-31 1958-01-13 Selenides of copper zinc and cadmium

Country Status (5)

Country Link
US (1) US2921834A (US06299757-20011009-C00006.png)
BE (1) BE563912A (US06299757-20011009-C00006.png)
CH (2) CH382124A (US06299757-20011009-C00006.png)
DE (2) DE1119833B (US06299757-20011009-C00006.png)
GB (1) GB878096A (US06299757-20011009-C00006.png)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3129056A (en) * 1960-04-01 1964-04-14 Nuclear Corp Of America Process for producing rare earth selenides and tellurides
CN109250692B (zh) * 2018-11-30 2022-09-02 武汉理工大学 一种自催化低温快速合成Cu2Se基热电材料的方法
CN110155958B (zh) * 2019-05-13 2022-11-04 东华大学 一种绣球状Cu2-xSe纳米材料及其制备和应用
CN110562935B (zh) * 2019-09-20 2022-11-08 安徽大学 一种带状框形ZnSe纳米材料及其制备方法和在比色检验重金属离子中的应用
CN113666347A (zh) * 2021-08-26 2021-11-19 陕西大美化工科技有限公司 一种水合肼盐酸盐的再生处理方法
CN114436319B (zh) * 2021-12-16 2023-12-19 佛山市铁人环保科技有限公司 一种亚硒酸锌溶胶及其制备方法和应用
CN114671414B (zh) * 2022-03-25 2023-05-16 浙江大学 一种用于钠离子电池的铁铜锡三元硒化物纳米材料及制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2176495A (en) * 1937-05-20 1939-10-17 Chemical Foundation Inc Method of producing cadmium selenide
US2402759A (en) * 1942-01-31 1946-06-25 Rca Corp Method of manufacturing luminescent material
US2698915A (en) * 1953-04-28 1955-01-04 Gen Electric Phosphor screen
US2767049A (en) * 1954-10-15 1956-10-16 Du Pont Preparation of chalcogenides

Also Published As

Publication number Publication date
DE1119833B (de) 1961-12-21
US2921834A (en) 1960-01-19
CH382124A (de) 1964-09-30
CH382123A (de) 1964-09-30
BE563912A (US06299757-20011009-C00006.png)
DE1122044B (de) 1962-01-18

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