GB876326A - Improvements in the manufacture of transistors - Google Patents
Improvements in the manufacture of transistorsInfo
- Publication number
- GB876326A GB876326A GB31013/57A GB3101357A GB876326A GB 876326 A GB876326 A GB 876326A GB 31013/57 A GB31013/57 A GB 31013/57A GB 3101357 A GB3101357 A GB 3101357A GB 876326 A GB876326 A GB 876326A
- Authority
- GB
- United Kingdom
- Prior art keywords
- heat treatment
- indium
- minutes
- junction
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 6
- 229910052738 indium Inorganic materials 0.000 abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000008188 pellet Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000002459 sustained effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB31013/57A GB876326A (en) | 1957-10-03 | 1957-10-03 | Improvements in the manufacture of transistors |
| BE561486D BE561486A (enrdf_load_stackoverflow) | 1957-10-03 | 1957-10-09 | |
| FR1184331D FR1184331A (fr) | 1957-10-03 | 1957-10-14 | Procédé de fabrication de dispositifs semi-conducteurs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB31013/57A GB876326A (en) | 1957-10-03 | 1957-10-03 | Improvements in the manufacture of transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB876326A true GB876326A (en) | 1961-08-30 |
Family
ID=10316605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB31013/57A Expired GB876326A (en) | 1957-10-03 | 1957-10-03 | Improvements in the manufacture of transistors |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE561486A (enrdf_load_stackoverflow) |
| FR (1) | FR1184331A (enrdf_load_stackoverflow) |
| GB (1) | GB876326A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL247735A (enrdf_load_stackoverflow) * | 1959-01-28 | |||
| DE1292259B (de) * | 1959-02-04 | 1969-04-10 | Telefunken Patent | Verfahren zum Herstellen von Transistoren durch Legieren |
| DE1233949B (de) * | 1959-07-13 | 1967-02-09 | Siemens Ag | Verfahren zur Herstellung einer Halbleiter-gleichrichteranordnung mit einem einkristallinen Halbleiterkoerper |
| DE1185296B (de) * | 1961-07-08 | 1965-01-14 | Telefunken Patent | Vorrichtung und Verfahren zum Herstellen von Halbleiteranordnungen |
-
1957
- 1957-10-03 GB GB31013/57A patent/GB876326A/en not_active Expired
- 1957-10-09 BE BE561486D patent/BE561486A/xx unknown
- 1957-10-14 FR FR1184331D patent/FR1184331A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE561486A (enrdf_load_stackoverflow) | 1958-04-09 |
| FR1184331A (fr) | 1959-07-20 |
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