GB876326A - Improvements in the manufacture of transistors - Google Patents
Improvements in the manufacture of transistorsInfo
- Publication number
- GB876326A GB876326A GB3101357A GB3101357A GB876326A GB 876326 A GB876326 A GB 876326A GB 3101357 A GB3101357 A GB 3101357A GB 3101357 A GB3101357 A GB 3101357A GB 876326 A GB876326 A GB 876326A
- Authority
- GB
- United Kingdom
- Prior art keywords
- heat treatment
- indium
- minutes
- junction
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 6
- 229910052738 indium Inorganic materials 0.000 abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000008188 pellet Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000002459 sustained effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3101357A GB876326A (en) | 1957-10-03 | 1957-10-03 | Improvements in the manufacture of transistors |
| BE561486D BE561486A (da) | 1957-10-03 | 1957-10-09 | |
| FR1184331D FR1184331A (fr) | 1957-10-03 | 1957-10-14 | Procédé de fabrication de dispositifs semi-conducteurs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3101357A GB876326A (en) | 1957-10-03 | 1957-10-03 | Improvements in the manufacture of transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB876326A true GB876326A (en) | 1961-08-30 |
Family
ID=10316605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3101357A Expired GB876326A (en) | 1957-10-03 | 1957-10-03 | Improvements in the manufacture of transistors |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE561486A (da) |
| FR (1) | FR1184331A (da) |
| GB (1) | GB876326A (da) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL247735A (da) * | 1959-01-28 | |||
| DE1292259B (de) * | 1959-02-04 | 1969-04-10 | Telefunken Patent | Verfahren zum Herstellen von Transistoren durch Legieren |
| DE1233949B (de) * | 1959-07-13 | 1967-02-09 | Siemens Ag | Verfahren zur Herstellung einer Halbleiter-gleichrichteranordnung mit einem einkristallinen Halbleiterkoerper |
| DE1185296B (de) * | 1961-07-08 | 1965-01-14 | Telefunken Patent | Vorrichtung und Verfahren zum Herstellen von Halbleiteranordnungen |
-
1957
- 1957-10-03 GB GB3101357A patent/GB876326A/en not_active Expired
- 1957-10-09 BE BE561486D patent/BE561486A/xx unknown
- 1957-10-14 FR FR1184331D patent/FR1184331A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1184331A (fr) | 1959-07-20 |
| BE561486A (da) | 1958-04-09 |
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