GB8705061D0 - Manufacturing semiconductor memory element - Google Patents

Manufacturing semiconductor memory element

Info

Publication number
GB8705061D0
GB8705061D0 GB878705061A GB8705061A GB8705061D0 GB 8705061 D0 GB8705061 D0 GB 8705061D0 GB 878705061 A GB878705061 A GB 878705061A GB 8705061 A GB8705061 A GB 8705061A GB 8705061 D0 GB8705061 D0 GB 8705061D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor memory
memory element
manufacturing semiconductor
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878705061A
Other versions
GB2188776B (en
GB2188776A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of GB8705061D0 publication Critical patent/GB8705061D0/en
Publication of GB2188776A publication Critical patent/GB2188776A/en
Application granted granted Critical
Publication of GB2188776B publication Critical patent/GB2188776B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
GB8705061A 1986-03-07 1987-03-04 Method of manufacturing semiconductor memory element Expired GB2188776B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61048680A JPH0691211B2 (en) 1986-03-07 1986-03-07 Method for manufacturing semiconductor memory device

Publications (3)

Publication Number Publication Date
GB8705061D0 true GB8705061D0 (en) 1987-04-08
GB2188776A GB2188776A (en) 1987-10-07
GB2188776B GB2188776B (en) 1989-11-01

Family

ID=12810031

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8705061A Expired GB2188776B (en) 1986-03-07 1987-03-04 Method of manufacturing semiconductor memory element

Country Status (4)

Country Link
JP (1) JPH0691211B2 (en)
DE (1) DE3707195A1 (en)
FR (1) FR2595507B1 (en)
GB (1) GB2188776B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01143254A (en) * 1987-11-28 1989-06-05 Mitsubishi Electric Corp Semiconductor storage device
US4963506A (en) * 1989-04-24 1990-10-16 Motorola Inc. Selective deposition of amorphous and polycrystalline silicon
DE69025140T2 (en) * 1989-11-27 1996-09-05 At & T Corp Method for selective epitaxial growth, which mainly has no side surface
US5168089A (en) * 1989-11-27 1992-12-01 At&T Bell Laboratories Substantially facet-free selective epitaxial growth process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
US4407058A (en) * 1981-05-22 1983-10-04 International Business Machines Corporation Method of making dense vertical FET's
US4473598A (en) * 1982-06-30 1984-09-25 International Business Machines Corporation Method of filling trenches with silicon and structures
JPS60115254A (en) * 1983-11-28 1985-06-21 Hitachi Ltd Semiconductor device and manufacture thereof
JPS60126861A (en) * 1983-12-13 1985-07-06 Fujitsu Ltd Semiconductor memory device
JPS60189964A (en) * 1984-03-12 1985-09-27 Hitachi Ltd Semiconductor memory
JPS6187358A (en) * 1984-10-05 1986-05-02 Nec Corp Semiconductor memory and manufacture thereof

Also Published As

Publication number Publication date
FR2595507A1 (en) 1987-09-11
DE3707195C2 (en) 1992-08-06
DE3707195A1 (en) 1987-09-10
FR2595507B1 (en) 1991-09-27
GB2188776B (en) 1989-11-01
GB2188776A (en) 1987-10-07
JPH0691211B2 (en) 1994-11-14
JPS62206875A (en) 1987-09-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee