GB2188776B - Method of manufacturing semiconductor memory element - Google Patents

Method of manufacturing semiconductor memory element

Info

Publication number
GB2188776B
GB2188776B GB8705061A GB8705061A GB2188776B GB 2188776 B GB2188776 B GB 2188776B GB 8705061 A GB8705061 A GB 8705061A GB 8705061 A GB8705061 A GB 8705061A GB 2188776 B GB2188776 B GB 2188776B
Authority
GB
United Kingdom
Prior art keywords
semiconductor memory
memory element
manufacturing semiconductor
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8705061A
Other versions
GB8705061D0 (en
GB2188776A (en
Inventor
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of GB8705061D0 publication Critical patent/GB8705061D0/en
Publication of GB2188776A publication Critical patent/GB2188776A/en
Application granted granted Critical
Publication of GB2188776B publication Critical patent/GB2188776B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB8705061A 1986-03-07 1987-03-04 Method of manufacturing semiconductor memory element Expired GB2188776B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61048680A JPH0691211B2 (en) 1986-03-07 1986-03-07 Method for manufacturing semiconductor memory device

Publications (3)

Publication Number Publication Date
GB8705061D0 GB8705061D0 (en) 1987-04-08
GB2188776A GB2188776A (en) 1987-10-07
GB2188776B true GB2188776B (en) 1989-11-01

Family

ID=12810031

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8705061A Expired GB2188776B (en) 1986-03-07 1987-03-04 Method of manufacturing semiconductor memory element

Country Status (4)

Country Link
JP (1) JPH0691211B2 (en)
DE (1) DE3707195A1 (en)
FR (1) FR2595507B1 (en)
GB (1) GB2188776B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01143254A (en) * 1987-11-28 1989-06-05 Mitsubishi Electric Corp Semiconductor storage device
US4963506A (en) * 1989-04-24 1990-10-16 Motorola Inc. Selective deposition of amorphous and polycrystalline silicon
DE69025140T2 (en) * 1989-11-27 1996-09-05 At & T Corp Method for selective epitaxial growth, which mainly has no side surface
US5168089A (en) * 1989-11-27 1992-12-01 At&T Bell Laboratories Substantially facet-free selective epitaxial growth process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0145606A2 (en) * 1983-12-13 1985-06-19 Fujitsu Limited Semiconductor memory device
EP0177066A2 (en) * 1984-10-05 1986-04-09 Nec Corporation Semiconductor memory device with information storage vertical trench capacitor and method of manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
US4407058A (en) * 1981-05-22 1983-10-04 International Business Machines Corporation Method of making dense vertical FET's
US4473598A (en) * 1982-06-30 1984-09-25 International Business Machines Corporation Method of filling trenches with silicon and structures
JPS60115254A (en) * 1983-11-28 1985-06-21 Hitachi Ltd Semiconductor device and manufacture thereof
JPS60189964A (en) * 1984-03-12 1985-09-27 Hitachi Ltd Semiconductor memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0145606A2 (en) * 1983-12-13 1985-06-19 Fujitsu Limited Semiconductor memory device
EP0177066A2 (en) * 1984-10-05 1986-04-09 Nec Corporation Semiconductor memory device with information storage vertical trench capacitor and method of manufacturing the same

Also Published As

Publication number Publication date
GB8705061D0 (en) 1987-04-08
FR2595507B1 (en) 1991-09-27
JPS62206875A (en) 1987-09-11
DE3707195A1 (en) 1987-09-10
GB2188776A (en) 1987-10-07
JPH0691211B2 (en) 1994-11-14
FR2595507A1 (en) 1987-09-11
DE3707195C2 (en) 1992-08-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee