GB863336A - Improvements in or relating to transistor circuit arrangements - Google Patents

Improvements in or relating to transistor circuit arrangements

Info

Publication number
GB863336A
GB863336A GB36225/58A GB3622558A GB863336A GB 863336 A GB863336 A GB 863336A GB 36225/58 A GB36225/58 A GB 36225/58A GB 3622558 A GB3622558 A GB 3622558A GB 863336 A GB863336 A GB 863336A
Authority
GB
United Kingdom
Prior art keywords
transistor
resistor
circuit
resistance
collector current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36225/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB863336A publication Critical patent/GB863336A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

863,336. Transistor circuits. SIEMENS & HALSKE A.G. Nov.11, 1958 [Nov. 13, 1957], No. 36225/58. Class 40(6) A temperature compensating arrangement including a temperature-dependent circuit element is connected to the input terminals of a transistor circuit, the arrangement also including a further circuit element which causes the resistance of the compensating circuit across the transistor input to remain substantially constant. A P-N-P transistor 1, Fig. 1, is connected in a common emitter circuit, and a voltage divider consisting of resistors 2 and 3 is connected between terminals 10 and 11 of the voltage source, the resistor 3 having a negative temperature coefficient and the resistor 2 having a positive temperature coefficient. The junction 6 between the resistor 2 and resistor 3 is connected through resistor 4 to the base electrode of the transistor 1. If the temperature rises the resistance of the negative temperature coefficient resistor 3 is reduced and as a result the potential of the junction 6 becomes more positive and the base current of the transistor is reduced tending to reduce the collector current. The values of the circuit elements are adjusted such that the reduction of collector current due to the reduction of base current balances the increase of collector current due to rise in temperature so that the collector current actually remains substantially constant. The sensitivity of the arrangement remains constant due to the resistance of resistor 4 being high relative to the input resistance of the transistor. In a modification (Fig. 2, not shown) a capacitor is connected in series with the input lead for A.C. inputs. In a second embodiment (Fig. 3, not shown) a number of circuits such as shown in Fig. 1 are all connected across a common potential divider whilst in a third embodiment (Fig. 4, not shown) the circuit is used in an amplifier for a photo-electric device, the amplifier output circuit comprising a relay shunted by a diode.
GB36225/58A 1957-11-13 1958-11-11 Improvements in or relating to transistor circuit arrangements Expired GB863336A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE863336X 1957-11-13

Publications (1)

Publication Number Publication Date
GB863336A true GB863336A (en) 1961-03-22

Family

ID=6801102

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36225/58A Expired GB863336A (en) 1957-11-13 1958-11-11 Improvements in or relating to transistor circuit arrangements

Country Status (2)

Country Link
FR (1) FR1208644A (en)
GB (1) GB863336A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473793A (en) * 1981-03-26 1984-09-25 Dbx, Inc. Bias generator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473793A (en) * 1981-03-26 1984-09-25 Dbx, Inc. Bias generator

Also Published As

Publication number Publication date
FR1208644A (en) 1960-02-24

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