GB8602637D0 - Thin films - Google Patents
Thin filmsInfo
- Publication number
- GB8602637D0 GB8602637D0 GB8602637A GB8602637A GB8602637D0 GB 8602637 D0 GB8602637 D0 GB 8602637D0 GB 8602637 A GB8602637 A GB 8602637A GB 8602637 A GB8602637 A GB 8602637A GB 8602637 D0 GB8602637 D0 GB 8602637D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- thin films
- films
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17583084A JPS6154644A (en) | 1984-08-25 | 1984-08-25 | Thin film and manufacture thereof |
JP21125584A JPS6190444A (en) | 1984-10-11 | 1984-10-11 | Manufacture of thin film |
JP25846784A JPS61137342A (en) | 1984-12-08 | 1984-12-08 | Manufacture of thin film |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8602637D0 true GB8602637D0 (en) | 1986-03-12 |
GB2171251A GB2171251A (en) | 1986-08-20 |
GB2171251B GB2171251B (en) | 1989-05-10 |
Family
ID=27324168
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8520956A Expired GB2165692B (en) | 1984-08-25 | 1985-08-21 | Manufacture of interconnection patterns |
GB8602637A Expired GB2171251B (en) | 1984-08-25 | 1986-02-14 | Semiconductor devices |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8520956A Expired GB2165692B (en) | 1984-08-25 | 1985-08-21 | Manufacture of interconnection patterns |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE3530419A1 (en) |
FR (1) | FR2569494B1 (en) |
GB (2) | GB2165692B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5330629A (en) * | 1992-12-15 | 1994-07-19 | At&T Bell Laboratories | Method for depositing aluminum layers on insulating oxide substrates |
JPH09260374A (en) * | 1995-09-27 | 1997-10-03 | Texas Instr Inc <Ti> | Mutual connection of integrated circuit and its method |
US6391754B1 (en) | 1996-09-27 | 2002-05-21 | Texas Instruments Incorporated | Method of making an integrated circuit interconnect |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3682729A (en) * | 1969-12-30 | 1972-08-08 | Ibm | Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby |
US4012756A (en) * | 1969-12-30 | 1977-03-15 | International Business Machines Corporation | Method of inhibiting hillock formation in films and film thereby and multilayer structure therewith |
US3903324A (en) * | 1969-12-30 | 1975-09-02 | Ibm | Method of changing the physical properties of a metallic film by ion beam formation |
US3887994A (en) * | 1973-06-29 | 1975-06-10 | Ibm | Method of manufacturing a semiconductor device |
DE2554638A1 (en) * | 1975-12-04 | 1977-06-16 | Siemens Ag | PROCESS FOR GENERATING DEFINED BOOT ANGLES FOR AN ETCHED EDGE |
DD136670A1 (en) * | 1976-02-04 | 1979-07-18 | Rudolf Sacher | METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR STRUCTURES |
US4111775A (en) * | 1977-07-08 | 1978-09-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Multilevel metallization method for fabricating a metal oxide semiconductor device |
US4267011A (en) * | 1978-09-29 | 1981-05-12 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
DE3003285A1 (en) * | 1980-01-30 | 1981-08-06 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING LOW-RESISTANT, SINGLE-CRYSTAL METAL OR ALLOY LAYERS ON SUBSTRATES |
DE3217026A1 (en) * | 1981-05-06 | 1982-12-30 | Mitsubishi Denki K.K., Tokyo | Semiconductor device |
US4450041A (en) * | 1982-06-21 | 1984-05-22 | The United States Of America As Represented By The Secretary Of The Navy | Chemical etching of transformed structures |
US4502207A (en) * | 1982-12-21 | 1985-03-05 | Toshiba Shibaura Denki Kabushiki Kaisha | Wiring material for semiconductor device and method for forming wiring pattern therewith |
US4489482A (en) * | 1983-06-06 | 1984-12-25 | Fairchild Camera & Instrument Corp. | Impregnation of aluminum interconnects with copper |
-
1985
- 1985-08-21 GB GB8520956A patent/GB2165692B/en not_active Expired
- 1985-08-23 FR FR8512682A patent/FR2569494B1/en not_active Expired
- 1985-08-26 DE DE19853530419 patent/DE3530419A1/en not_active Ceased
-
1986
- 1986-02-14 GB GB8602637A patent/GB2171251B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2165692A (en) | 1986-04-16 |
GB2171251A (en) | 1986-08-20 |
GB2165692B (en) | 1989-05-04 |
FR2569494B1 (en) | 1988-08-12 |
GB8520956D0 (en) | 1985-09-25 |
GB2171251B (en) | 1989-05-10 |
DE3530419A1 (en) | 1986-03-06 |
FR2569494A1 (en) | 1986-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20020821 |