GB856137A - Improvements relating to production of silicon - Google Patents

Improvements relating to production of silicon

Info

Publication number
GB856137A
GB856137A GB18965/56A GB1896556A GB856137A GB 856137 A GB856137 A GB 856137A GB 18965/56 A GB18965/56 A GB 18965/56A GB 1896556 A GB1896556 A GB 1896556A GB 856137 A GB856137 A GB 856137A
Authority
GB
United Kingdom
Prior art keywords
silicon
temperature
effected
crystallisation
recrystallisation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18965/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB856137A publication Critical patent/GB856137A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

Silicon is prepared by the thermal decomposition of recrystallised silicon tetraiodide. Recrystallisation may be effected by partial crystallisation of a melt, by zone refining, or by partial crystallisation from solution. Solvents specified are heptane, octane, nonane, decane, undecane, dodecane and tridecane; alkyl substituted cyclohexanes, cycloheptanes and cyclooctanes; carbon tetrachloride, methylene dichloride, ethylene dichloride and 1-chlorooctane; carbon disulphide; and benzene, toluene, monochlorobenzene, dichlorobenzene, naphthalene and phenylethane. Recrystallisation may be repeated one or more times. An equimolecular proportion of solvent may be employed. After crystallisation from solution, the crystals are preferably heated in vacuo at a temperature below the b.p. to remove residual solvents. The recrystallised silicon tetrachloride may be fractionally distilled. Distillation may be effected in a 12 plate quartz column or a 30 plate pyrex column at atmospheric pressure and at a temperature of 295 DEG C. and a middle fraction decomposed. Decomposition may be effected at a temperature of 800-1,300 DEG C., e.g. 1,000 DEG C., at a pressure of 0.5-10 up to 100 mm. or more of mercury, and in contact with quartz or tantalum. The silicon tetraiodide to be decomposed may be prepared by passing vaporous iodine diluted with nitrogen over powdered silicon containing less than 5% of impurity heated to a temperature of 450-900 DEG C., preferably 600-800 DEG C. Specification 843,467 is referred to.
GB18965/56A 1955-06-27 1956-06-19 Improvements relating to production of silicon Expired GB856137A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US856137XA 1955-06-27 1955-06-27

Publications (1)

Publication Number Publication Date
GB856137A true GB856137A (en) 1960-12-14

Family

ID=22192782

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18965/56A Expired GB856137A (en) 1955-06-27 1956-06-19 Improvements relating to production of silicon

Country Status (2)

Country Link
FR (1) FR1154281A (en)
GB (1) GB856137A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1772429A1 (en) * 2004-06-22 2007-04-11 Shin-Etsu Film Co., Ltd. Method for producing polycrystalline silicon and polycrystalline silicon for solar cell produced by the method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3006737A (en) * 1959-06-02 1961-10-31 Guy H Moates Apparatus for continuous preparation of ultrapure silicon

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1772429A1 (en) * 2004-06-22 2007-04-11 Shin-Etsu Film Co., Ltd. Method for producing polycrystalline silicon and polycrystalline silicon for solar cell produced by the method
EP1772429A4 (en) * 2004-06-22 2010-01-06 Shin Etsu Film Co Ltd Method for producing polycrystalline silicon and polycrystalline silicon for solar cell produced by the method
US7732012B2 (en) 2004-06-22 2010-06-08 Shin-Etsu Film Co., Ltd Method for manufacturing polycrystalline silicon, and polycrystalline silicon for solar cells manufactured by the method

Also Published As

Publication number Publication date
FR1154281A (en) 1958-04-04

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