GB8430033D0 - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB8430033D0
GB8430033D0 GB848430033A GB8430033A GB8430033D0 GB 8430033 D0 GB8430033 D0 GB 8430033D0 GB 848430033 A GB848430033 A GB 848430033A GB 8430033 A GB8430033 A GB 8430033A GB 8430033 D0 GB8430033 D0 GB 8430033D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB848430033A
Other versions
GB2151078B (en
GB2151078A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22484283A external-priority patent/JPS60116171A/en
Priority claimed from JP22484183A external-priority patent/JPS60116170A/en
Priority claimed from JP22484383A external-priority patent/JPS60116172A/en
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB8430033D0 publication Critical patent/GB8430033D0/en
Publication of GB2151078A publication Critical patent/GB2151078A/en
Application granted granted Critical
Publication of GB2151078B publication Critical patent/GB2151078B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H01L29/1008—Base region of bipolar transistors of lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
GB08430033A 1983-11-29 1984-11-28 Semiconductor devices Expired GB2151078B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22484283A JPS60116171A (en) 1983-11-29 1983-11-29 Semiconductor device
JP22484183A JPS60116170A (en) 1983-11-29 1983-11-29 Semiconductor device
JP22484383A JPS60116172A (en) 1983-11-29 1983-11-29 Semiconductor device

Publications (3)

Publication Number Publication Date
GB8430033D0 true GB8430033D0 (en) 1985-01-09
GB2151078A GB2151078A (en) 1985-07-10
GB2151078B GB2151078B (en) 1987-09-23

Family

ID=27330963

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08430033A Expired GB2151078B (en) 1983-11-29 1984-11-28 Semiconductor devices

Country Status (3)

Country Link
DE (1) DE3443407A1 (en)
FR (1) FR2555814B1 (en)
GB (1) GB2151078B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6174369A (en) * 1984-09-20 1986-04-16 Sony Corp Semiconductor device
WO2014122472A1 (en) * 2013-02-07 2014-08-14 John Wood A bipolar junction transistor structure
JP5821924B2 (en) * 2013-10-21 2015-11-24 トヨタ自動車株式会社 Bipolar transistor
JP5821925B2 (en) * 2013-10-21 2015-11-24 トヨタ自動車株式会社 Bipolar transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE792639A (en) * 1971-12-17 1973-03-30 Ibm LIMITED SPACE LOAD TRANSISTOR

Also Published As

Publication number Publication date
FR2555814B1 (en) 1987-08-28
DE3443407A1 (en) 1985-06-27
GB2151078B (en) 1987-09-23
GB2151078A (en) 1985-07-10
FR2555814A1 (en) 1985-05-31

Similar Documents

Publication Publication Date Title
GB2134705B (en) Semiconductor devices
DE3463873D1 (en) Semiconductor devices
DE3476144D1 (en) Semiconductor device
GB2150753B (en) Semiconductor device
GB2137412B (en) Semiconductor device
GB8429171D0 (en) Semiconductor device
DE3480248D1 (en) Semiconductor devices
EP0138048A3 (en) Press-packed semiconductor device
GB2135511B (en) Semiconductor device
GB2135824B (en) Semiconductor device
DE3465224D1 (en) Semiconductor device
DE3469830D1 (en) Semiconductor device
GB8410200D0 (en) Making semiconductor devices
EP0148031A3 (en) Semiconductor device
DE3465553D1 (en) Semiconductor device
GB2139420B (en) Semiconductor devices
GB8312281D0 (en) Semiconductor devices
EP0118102A3 (en) Semiconductor device
GB8405871D0 (en) Semiconductor device
DE3469114D1 (en) Semiconductor device
GB2151397B (en) Semiconductor devices
GB8406367D0 (en) Semiconductor device
GB2151078B (en) Semiconductor devices
GB8428394D0 (en) Semiconductor device
GB8322977D0 (en) Semiconductor device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19961128