GB8410101D0 - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB8410101D0
GB8410101D0 GB848410101A GB8410101A GB8410101D0 GB 8410101 D0 GB8410101 D0 GB 8410101D0 GB 848410101 A GB848410101 A GB 848410101A GB 8410101 A GB8410101 A GB 8410101A GB 8410101 D0 GB8410101 D0 GB 8410101D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB848410101A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB848410101A priority Critical patent/GB8410101D0/en
Publication of GB8410101D0 publication Critical patent/GB8410101D0/en
Priority to GB08509421A priority patent/GB2157886B/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204Diodes
    • H01L29/66219Diodes with a heterojunction, e.g. resonant tunneling diodes [RTD]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/88Tunnel-effect diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
GB848410101A 1984-04-18 1984-04-18 Semiconductor devices Pending GB8410101D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB848410101A GB8410101D0 (en) 1984-04-18 1984-04-18 Semiconductor devices
GB08509421A GB2157886B (en) 1984-04-18 1985-04-12 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB848410101A GB8410101D0 (en) 1984-04-18 1984-04-18 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB8410101D0 true GB8410101D0 (en) 1984-05-31

Family

ID=10559830

Family Applications (2)

Application Number Title Priority Date Filing Date
GB848410101A Pending GB8410101D0 (en) 1984-04-18 1984-04-18 Semiconductor devices
GB08509421A Expired GB2157886B (en) 1984-04-18 1985-04-12 Semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB08509421A Expired GB2157886B (en) 1984-04-18 1985-04-12 Semiconductor devices

Country Status (1)

Country Link
GB (2) GB8410101D0 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7302767A (en) * 1973-02-28 1974-08-30
DE3114679A1 (en) * 1980-04-11 1982-01-14 Hitachi, Ltd., Tokyo INTEGRATED CIRCUIT WITH MULTI-LAYER CONNECTIONS
GB2098799B (en) * 1981-05-20 1985-08-21 Nippon Electric Co Multi-level interconnection system for integrated circuits

Also Published As

Publication number Publication date
GB8509421D0 (en) 1985-05-15
GB2157886B (en) 1987-11-25
GB2157886A (en) 1985-10-30

Similar Documents

Publication Publication Date Title
GB2167229B (en) Semiconductor devices
GB8518801D0 (en) Semiconductor devices
EP0157905A3 (en) Semiconductor device
GB8400959D0 (en) Semiconductor device
EP0159273A3 (en) Semiconductor device
GB2166904B (en) Semiconductor devices
GB8513412D0 (en) Semiconductor device
EP0183474A3 (en) Semiconductor device
GB8426023D0 (en) Semiconductor devices
GB8508243D0 (en) Semiconductor device
GB8423690D0 (en) Semiconductor devices
GB8424296D0 (en) Semiconductor devices
EP0152805A3 (en) Semiconductor device
GB8518604D0 (en) Semiconductor device
GB2168848B (en) Semiconductor devices
GB2168847B (en) Semiconductor devices
GB8418823D0 (en) Semiconductor devices
GB2166588B (en) Buried-resistance semiconductor devices
GB2171251B (en) Semiconductor devices
KR930009808B1 (en) Semiconductor device
GB2155036B (en) Semiconductor device
DE3479627D1 (en) Semiconductor device
GB2167231B (en) Semiconductor devices
GB8402551D0 (en) Semiconductor devices
GB8412491D0 (en) Semiconductor devices