GB8410101D0 - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB8410101D0
GB8410101D0 GB848410101A GB8410101A GB8410101D0 GB 8410101 D0 GB8410101 D0 GB 8410101D0 GB 848410101 A GB848410101 A GB 848410101A GB 8410101 A GB8410101 A GB 8410101A GB 8410101 D0 GB8410101 D0 GB 8410101D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB848410101A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB848410101A priority Critical patent/GB8410101D0/en
Publication of GB8410101D0 publication Critical patent/GB8410101D0/en
Priority to GB08509421A priority patent/GB2157886B/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H01L29/66219—Diodes with a heterojunction, e.g. resonant tunneling diodes [RTD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
GB848410101A 1984-04-18 1984-04-18 Semiconductor devices Pending GB8410101D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB848410101A GB8410101D0 (en) 1984-04-18 1984-04-18 Semiconductor devices
GB08509421A GB2157886B (en) 1984-04-18 1985-04-12 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB848410101A GB8410101D0 (en) 1984-04-18 1984-04-18 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB8410101D0 true GB8410101D0 (en) 1984-05-31

Family

ID=10559830

Family Applications (2)

Application Number Title Priority Date Filing Date
GB848410101A Pending GB8410101D0 (en) 1984-04-18 1984-04-18 Semiconductor devices
GB08509421A Expired GB2157886B (en) 1984-04-18 1985-04-12 Semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB08509421A Expired GB2157886B (en) 1984-04-18 1985-04-12 Semiconductor devices

Country Status (1)

Country Link
GB (2) GB8410101D0 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7302767A (en) * 1973-02-28 1974-08-30
DE3114679A1 (en) * 1980-04-11 1982-01-14 Hitachi, Ltd., Tokyo INTEGRATED CIRCUIT WITH MULTI-LAYER CONNECTIONS
GB2098799B (en) * 1981-05-20 1985-08-21 Nippon Electric Co Multi-level interconnection system for integrated circuits

Also Published As

Publication number Publication date
GB8509421D0 (en) 1985-05-15
GB2157886B (en) 1987-11-25
GB2157886A (en) 1985-10-30

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