GB833928A - Improved process for the purification of semi-conductor material - Google Patents

Improved process for the purification of semi-conductor material

Info

Publication number
GB833928A
GB833928A GB3701357A GB3701357A GB833928A GB 833928 A GB833928 A GB 833928A GB 3701357 A GB3701357 A GB 3701357A GB 3701357 A GB3701357 A GB 3701357A GB 833928 A GB833928 A GB 833928A
Authority
GB
United Kingdom
Prior art keywords
arsenic
oxide
metal
heated
hydrogen sulphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3701357A
Inventor
George Richard Antell
Tudor Wyndham Roberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Metropolitan Vickers Electrical Co Ltd
Original Assignee
Metropolitan Vickers Electrical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metropolitan Vickers Electrical Co Ltd filed Critical Metropolitan Vickers Electrical Co Ltd
Priority to GB3701357A priority Critical patent/GB833928A/en
Publication of GB833928A publication Critical patent/GB833928A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone

Abstract

Arsenic is freed from vaporizable impurities by converting the arsenic wholly to oxide, removing the gaseous oxide of the impurity simultaneously produced, and reducing the arsenic oxide to the element. In a preferred embodiment arsenic trioxide is heated and entrained in a stream of reducing gas such as hydrogen which passes through a reaction chamber heated to about 800 DEG C. in which sulphur forms hydrogen sulphide and arsenic is partially reduced to metal. The reaction products pass to a condensing chamber in which arsenic and unreduced arsenic oxide are deposited, the hydrogen sulphide being carried away by the gas stream.ALSO:Arsenic is freed from vaporizable impurities by converting the arsenic wholly to oxide, removing the gaseous oxide of the impurity simultaneously produced, and reducing the arsenic oxide to the element. In a preferred embodiment arsenic trioxide is heated and entrained in a stream of reducing gas such as hydrogen which passes through a reaction chamber heated to about 800 DEG C. in which sulphur forms hydrogen sulphide and arsenic is partially reduced to metal. The reaction products pass to a condensing chamber maintained at 80-100 DEG C. in which arsenic and unreduced arsenic oxide are deposited, the hydrogen sulphide being carried away by the gas stream. The gas flow is reversed and the operation repeated until the arsenic oxide is wholly converted to metal. The metal may then be distilled in a gas stream and condensed in a vessel containing e.g. aluminium, indium or gallium with which the arsenic is to be alloyed by a zone melting process to produce semiconductor material.
GB3701357A 1957-11-27 1957-11-27 Improved process for the purification of semi-conductor material Expired GB833928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3701357A GB833928A (en) 1957-11-27 1957-11-27 Improved process for the purification of semi-conductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3701357A GB833928A (en) 1957-11-27 1957-11-27 Improved process for the purification of semi-conductor material

Publications (1)

Publication Number Publication Date
GB833928A true GB833928A (en) 1960-05-04

Family

ID=10393004

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3701357A Expired GB833928A (en) 1957-11-27 1957-11-27 Improved process for the purification of semi-conductor material

Country Status (1)

Country Link
GB (1) GB833928A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1181919B (en) * 1962-12-24 1964-11-19 Siemens Ag Process for the production of high purity arsenic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1181919B (en) * 1962-12-24 1964-11-19 Siemens Ag Process for the production of high purity arsenic

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