GB8300163D0 - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- GB8300163D0 GB8300163D0 GB838300163A GB8300163A GB8300163D0 GB 8300163 D0 GB8300163 D0 GB 8300163D0 GB 838300163 A GB838300163 A GB 838300163A GB 8300163 A GB8300163 A GB 8300163A GB 8300163 D0 GB8300163 D0 GB 8300163D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57000353A JPS58118140A (en) | 1982-01-06 | 1982-01-06 | Semiconductor memory device |
JP57000350A JPS58118138A (en) | 1982-01-06 | 1982-01-06 | Semiconductor memory device |
JP57000354A JPS58118141A (en) | 1982-01-06 | 1982-01-06 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
GB8300163D0 true GB8300163D0 (en) | 1983-02-09 |
GB2113466A GB2113466A (en) | 1983-08-03 |
Family
ID=27274427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08300163A Withdrawn GB2113466A (en) | 1982-01-06 | 1983-01-05 | Semiconductor memory device and method of manufacture |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR840003147A (en) |
DE (1) | DE3300114A1 (en) |
FR (1) | FR2519461A1 (en) |
GB (1) | GB2113466A (en) |
IT (1) | IT1155230B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59172761A (en) * | 1983-03-23 | 1984-09-29 | Hitachi Ltd | Semiconductor device |
US5155702A (en) * | 1990-11-30 | 1992-10-13 | Samsung Electronics Co., Ltd. | Semiconductor memory device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL176415C (en) * | 1976-07-05 | 1985-04-01 | Hitachi Ltd | SEMI-CONDUCTOR MEMORY DEVICE CONTAINING A MATRIX OF SEMI-CONDUCTOR MEMORY CELLS CONSISTING OF A FIELD-EFFECT TRANSISTOR AND A STORAGE CAPACITY. |
DE2633558C2 (en) * | 1976-07-26 | 1978-08-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Memory chip |
JPS5623771A (en) * | 1979-08-01 | 1981-03-06 | Hitachi Ltd | Semiconductor memory |
JPS5780739A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
JPS57186354A (en) * | 1981-05-13 | 1982-11-16 | Hitachi Ltd | Semiconductor memory storage and manufacture thereof |
-
1982
- 1982-11-30 FR FR8220049A patent/FR2519461A1/en active Pending
- 1982-12-30 KR KR1019820005881A patent/KR840003147A/en unknown
- 1982-12-31 IT IT25092/82A patent/IT1155230B/en active
-
1983
- 1983-01-04 DE DE3300114A patent/DE3300114A1/en not_active Withdrawn
- 1983-01-05 GB GB08300163A patent/GB2113466A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
IT8225092A0 (en) | 1982-12-31 |
IT1155230B (en) | 1987-01-21 |
GB2113466A (en) | 1983-08-03 |
KR840003147A (en) | 1984-08-13 |
FR2519461A1 (en) | 1983-07-08 |
DE3300114A1 (en) | 1983-07-28 |
IT8225092A1 (en) | 1984-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |