GB821551A - Improvements in or relating to methods of soldering - Google Patents

Improvements in or relating to methods of soldering

Info

Publication number
GB821551A
GB821551A GB13954/56A GB1395456A GB821551A GB 821551 A GB821551 A GB 821551A GB 13954/56 A GB13954/56 A GB 13954/56A GB 1395456 A GB1395456 A GB 1395456A GB 821551 A GB821551 A GB 821551A
Authority
GB
United Kingdom
Prior art keywords
solder
mount
indium
plate
bead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13954/56A
Inventor
Ian Douglas Colson
Michael Rupert Platten Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Publication of GB821551A publication Critical patent/GB821551A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45609—Indium (In) as principal constituent
    • H—ELECTRICITY
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/01028—Nickel [Ni]
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    • H01L2924/01049—Indium [In]
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    • H01L2924/0105—Tin [Sn]
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Abstract

821,551. Soldering; welding by pressure. GENERAL ELECTRIC CO. Ltd. May 3, 1957 [May 4, 1956; March 22, 1957], Nos. 13954/56 and 9417/57. Class 83 (4). [Also in Group XXXVI] In soldering two members together, both of metal or one of metal and the other a semiconductor, a metal member has bonded to it, prior to the heating operation, solder, in the solid state, to be used in the soldering operation, the bond being brought about by pressing together clean mating surfaces on the solder and the member. In making a transistor a plate 1, Fig. 3, of N-type germanium is provided with an indium emitter electrode 2 and an indium collector electrode 3 by cold bonding. The face of the plate on which is bonded the electrode 2 is soldered to one side of an annular dished nickel mount 4 having an indium bead 10 cold-bonded to the other side. The mount is cleaned by heating in dry hydrogen to 1000‹ C., a solder washer 11 of 60% tin, 40% lead, by volume, is scraped on each face and fitted into the mount and is cold bonded thereto by placing the mount on a die-block and applying pressure to the solder by means of a punch struck by a mallet. The plate 1, having previously been cleaned in a reagent comprising acetic, nitric and hydrochloric acid and bromine, is placed in contact with the solder and the assembly is heated to 500‹ C. in dry hydrogen to solder the plate to the mount and to form PN junctions adjacent the indium beads on the plate. Two copper wires 19, 20 are sealed in glass beads in a copper base 14, Fig. 2, and a third wire is soldered to the base. Flattened ends 23, 24 on the wires 19, 20 are tinned in molten eutectic tin 48%, indium 52%, solder (m.p. 117‹ C.), and the top of a plinth 22 on the base is tinned with this solder by melting the solder thereon, this tinning being machined flat when solidified to form a layer 25. After cutting away the tops of the beads 2, 3 the plate and mount assembly 1, 4 are mounted on the base 14, the cut surface of bead 3 being pressed against the layer 25 to effect a bond therewith and the tinned portions 23, 24 of the wires being scraped and held against the indium beads 10 and 2. The assembly is heated to 135‹ C. to solder the bead 2 to part 24, bead 3 to plinth 22 and bead 10 to part 23. Finally an upper copper part 13 is cold-welded to the base 14 in dry nitrogen. Specifications 785,467, [Group XXXVI], and 817, 636 are referred to.
GB13954/56A 1957-03-22 1956-05-04 Improvements in or relating to methods of soldering Expired GB821551A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB941757 1957-03-22

Publications (1)

Publication Number Publication Date
GB821551A true GB821551A (en) 1959-10-07

Family

ID=9871572

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13954/56A Expired GB821551A (en) 1957-03-22 1956-05-04 Improvements in or relating to methods of soldering

Country Status (2)

Country Link
FR (1) FR1187704A (en)
GB (1) GB821551A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3171067A (en) * 1960-02-19 1965-02-23 Texas Instruments Inc Base washer contact for transistor and method of fabricating same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3171067A (en) * 1960-02-19 1965-02-23 Texas Instruments Inc Base washer contact for transistor and method of fabricating same

Also Published As

Publication number Publication date
FR1187704A (en) 1959-09-15

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