GB800010A - Improvements in or relating to semi-conductive devices - Google Patents

Improvements in or relating to semi-conductive devices

Info

Publication number
GB800010A
GB800010A GB1087654A GB1087654A GB800010A GB 800010 A GB800010 A GB 800010A GB 1087654 A GB1087654 A GB 1087654A GB 1087654 A GB1087654 A GB 1087654A GB 800010 A GB800010 A GB 800010A
Authority
GB
United Kingdom
Prior art keywords
jig
indium
semi
layer
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1087654A
Inventor
Thomas Brown Watkins
Kurt Hoselitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mullard Radio Valve Co Ltd
Original Assignee
Mullard Radio Valve Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Radio Valve Co Ltd filed Critical Mullard Radio Valve Co Ltd
Priority to GB1087654A priority Critical patent/GB800010A/en
Priority to FR1122560D priority patent/FR1122560A/en
Publication of GB800010A publication Critical patent/GB800010A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

800,010. Semi-conductor devices. MULLARD RADIO VALVE CO., Ltd. Jan. 25, - 1955 [April 13, 1954], No. 10876/54. Class 37. An alloy electrode in a semi-conductor device is provided by heating a layer of impurity on the semi-conductor body while a jig is placed on top of the layer but spaced from the body. The jig comprises a surface which contacts the layer and does not react or alloy with the impurity. Graphite, porcelain, silica and glass are suitable materials for the jig. The arrangement facilitates control of the alloy process. Fig. 1 shows an N-type germanium crystal 1 with a deposit of indium 2 over a predetermined area, secured between a base 4 and jig 3 of graphite The assembly is heated to 500‹ C. for ten minutes during which time the jig is moved nearer the crystal as shown by broken lines. In Fig. 2, the indium layer 2 is applied in a stepped formation, and the contact surface of the jig 3 is consequently inclined. The indium may be electrodeposited by immersing germanium in a bath of indium sulphate having a pH value of about 2, first connecting the germanium as an anode for etching and then as a cathode for deposition. Cellulose acetate or polystyrene may be used to mask the germanium where deposition is required over a restricted area only. Alternatively the indium may be in the form of a wafer, or may be provided by vacuum deposition. The invention is particularly suitable for a field effect transistor.
GB1087654A 1954-04-13 1954-04-13 Improvements in or relating to semi-conductive devices Expired GB800010A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB1087654A GB800010A (en) 1954-04-13 1954-04-13 Improvements in or relating to semi-conductive devices
FR1122560D FR1122560A (en) 1954-04-13 1955-04-12 Method of manufacturing an electrode system comprising a semiconductor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1087654A GB800010A (en) 1954-04-13 1954-04-13 Improvements in or relating to semi-conductive devices

Publications (1)

Publication Number Publication Date
GB800010A true GB800010A (en) 1958-08-20

Family

ID=32483086

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1087654A Expired GB800010A (en) 1954-04-13 1954-04-13 Improvements in or relating to semi-conductive devices

Country Status (2)

Country Link
FR (1) FR1122560A (en)
GB (1) GB800010A (en)

Also Published As

Publication number Publication date
FR1122560A (en) 1956-09-10

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