GB799222A - Improvements in and relating to the production of coatings - Google Patents
Improvements in and relating to the production of coatingsInfo
- Publication number
- GB799222A GB799222A GB3136253A GB3136253A GB799222A GB 799222 A GB799222 A GB 799222A GB 3136253 A GB3136253 A GB 3136253A GB 3136253 A GB3136253 A GB 3136253A GB 799222 A GB799222 A GB 799222A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- production
- heated
- electrical properties
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/228—Other specific oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
In a process for the production of a thin, transparent and electrically conducting layer containing a semi-conducting chemical compound deposited by cathode sputtering upon a support, the layer is heated to stabilize its electrical properties. In a modification, the electrical properties of the layer are changed by the heating and made permanent by rapid cooling. A layer of cadmium oxide may be deposited on a glass plate by the method disclosed in Specification 732,891, heated to a temperature up to 300 DEG C., thus reducing ts resistance, and then cooled to room temperature. Temperatures up to 600 DEG C. are also stated to be usable. p
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3136253A GB799222A (en) | 1953-11-12 | 1953-11-12 | Improvements in and relating to the production of coatings |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3136253A GB799222A (en) | 1953-11-12 | 1953-11-12 | Improvements in and relating to the production of coatings |
Publications (1)
Publication Number | Publication Date |
---|---|
GB799222A true GB799222A (en) | 1958-08-06 |
Family
ID=10321974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3136253A Expired GB799222A (en) | 1953-11-12 | 1953-11-12 | Improvements in and relating to the production of coatings |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB799222A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3257305A (en) * | 1961-08-14 | 1966-06-21 | Texas Instruments Inc | Method of manufacturing a capacitor by reactive sputtering of tantalum oxide onto a silicon substrate |
-
1953
- 1953-11-12 GB GB3136253A patent/GB799222A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3257305A (en) * | 1961-08-14 | 1966-06-21 | Texas Instruments Inc | Method of manufacturing a capacitor by reactive sputtering of tantalum oxide onto a silicon substrate |
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