GB794749A - Improvements in or relating to devices for indicating electro-magnetic or corpuscular radiation - Google Patents
Improvements in or relating to devices for indicating electro-magnetic or corpuscular radiationInfo
- Publication number
- GB794749A GB794749A GB23972/55A GB2397255A GB794749A GB 794749 A GB794749 A GB 794749A GB 23972/55 A GB23972/55 A GB 23972/55A GB 2397255 A GB2397255 A GB 2397255A GB 794749 A GB794749 A GB 794749A
- Authority
- GB
- United Kingdom
- Prior art keywords
- infra
- photo
- conductive
- layer
- red
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title abstract 8
- 239000011521 glass Substances 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000005083 Zinc sulfide Substances 0.000 abstract 1
- 230000008033 biological extinction Effects 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000004922 lacquer Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910000480 nickel oxide Inorganic materials 0.000 abstract 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 230000002285 radioactive effect Effects 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
794,749. Photo-conductive devices. PHILIPS ELECTRICAL INDUSTRIES, Ltd. Aug. 19, 1955 [Aug. 21, 1954], No. 23972/55. Class 37. [Also in Group XL (a)] The extinction or reduction of photo-conductivity by infra-red radiation is utilized in an electroluminescent radiation amplifier to convert either infra-red or X-ray images into visible images. In Fig. 1 a conductive glass plate 2 supports phosphor layer 3 of zinc sulphide activated by copper and a photo-conductive layer 5 of cadmium sulphide activated by silver and gallium, separated by an opaque layer 4 of black lacquer and enclosed between the conductive glass 2 and a transparent conductive coating 6, e.g. a thin layer of metal or of nickel oxide, or a further plate of conductive glass. An alternating voltage of frequency 500 c./s. is applied to the conductive parts 2, 6 and an infra-red image projected on to the photoconductive side of the device. An ultra-violet radiation from a lamp 12 is projected uniformly on to the photo-conductive layer and induces conductivity therein which is modified locally by the intensity of the infra-red image. The voltage variations produced thereby are impressed on the electroluminescent layer and give a negative invisible light of the infra-red image. Alternatively the photo-conductivity may be induced by particles or electrons instead of by ultra-violet radiation; e.g. by incorporating radio-active cobalt in the photo-conductive layer. In Fig. 2 (not shown), an X-ray image is projected on to the photo-conductive layer and infra-red radiation projected uniformly thereon in order to enhance the contrast of the visible image, the conductivity of the layer being reduced a greater amount by the infra-red radiation at those points where the X-ray intensity is lower. By controlling the area of infra-red radiation the contrast of various parts of the visible image may be varied at will.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL794749X | 1954-08-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB794749A true GB794749A (en) | 1958-05-07 |
Family
ID=19834515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB23972/55A Expired GB794749A (en) | 1954-08-21 | 1955-08-19 | Improvements in or relating to devices for indicating electro-magnetic or corpuscular radiation |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB794749A (en) |
-
1955
- 1955-08-19 GB GB23972/55A patent/GB794749A/en not_active Expired
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