GB787935A - Improvements in or relating to methods of providing a semi-conductive body of cadmium-telluride with a tellurium layer - Google Patents
Improvements in or relating to methods of providing a semi-conductive body of cadmium-telluride with a tellurium layerInfo
- Publication number
- GB787935A GB787935A GB34409/55A GB3440955A GB787935A GB 787935 A GB787935 A GB 787935A GB 34409/55 A GB34409/55 A GB 34409/55A GB 3440955 A GB3440955 A GB 3440955A GB 787935 A GB787935 A GB 787935A
- Authority
- GB
- United Kingdom
- Prior art keywords
- oxidizing
- solution
- per cent
- treated
- cadmium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052714 tellurium Inorganic materials 0.000 title abstract 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 3
- 229910004613 CdTe Inorganic materials 0.000 abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 2
- 235000019647 acidic taste Nutrition 0.000 abstract 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract 2
- OZECDDHOAMNMQI-UHFFFAOYSA-H cerium(3+);trisulfate Chemical compound [Ce+3].[Ce+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OZECDDHOAMNMQI-UHFFFAOYSA-H 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
Abstract
A tellurium layer is formed on a cadmium telluride body by treating it with an oxidizing solution to superficially convert it to Te. The strength of the oxidizing effect which determines whether converversion takes place at all and whether TeO is formed instead depends on the oxidizing substance, solution concentration and acidity, temperature, and duration of treatment. Suitable oxidizing substances are iodine, ferric chloride, hydrogen peroxide, nitric acid and cerium sulphate, preferably acidified with hydrochloric acid. In one example of CdTe plate of P type conductivity is treated with a 0.3 per cent solution of FeCl3 at 70 DEG C. for 5 minutes, and in a further example a plate of N type CdTe crystal is treated at 40 DEG C. with a solution of 20.2 per cent HCl and 3 per cent HNO3. The bodies thus produced may be used to form semiconductor devices (see Group XXXVI). The Specification contains a table showing the oxidizing effect of various oxidizing solutions of different concentrations, acidities and temperatures. Specification 773,860 is referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL339991X | 1954-12-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB787935A true GB787935A (en) | 1957-12-18 |
Family
ID=19784661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB34409/55A Expired GB787935A (en) | 1954-12-04 | 1955-12-01 | Improvements in or relating to methods of providing a semi-conductive body of cadmium-telluride with a tellurium layer |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE543308A (en) |
| CH (1) | CH339991A (en) |
| DE (1) | DE1009312B (en) |
| FR (1) | FR1139450A (en) |
| GB (1) | GB787935A (en) |
| NL (2) | NL192946A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9231134B2 (en) | 2012-08-31 | 2016-01-05 | First Solar, Inc. | Photovoltaic devices |
| US9276157B2 (en) | 2012-08-31 | 2016-03-01 | First Solar, Inc. | Methods of treating a semiconductor layer |
-
0
- NL NL88297D patent/NL88297C/xx active
- NL NL192946D patent/NL192946A/xx unknown
- BE BE543308D patent/BE543308A/xx unknown
-
1955
- 1955-11-30 DE DEN11516A patent/DE1009312B/en active Pending
- 1955-12-01 GB GB34409/55A patent/GB787935A/en not_active Expired
- 1955-12-02 CH CH339991D patent/CH339991A/en unknown
- 1955-12-02 FR FR1139450D patent/FR1139450A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9231134B2 (en) | 2012-08-31 | 2016-01-05 | First Solar, Inc. | Photovoltaic devices |
| US9276157B2 (en) | 2012-08-31 | 2016-03-01 | First Solar, Inc. | Methods of treating a semiconductor layer |
Also Published As
| Publication number | Publication date |
|---|---|
| BE543308A (en) | |
| FR1139450A (en) | 1957-07-01 |
| CH339991A (en) | 1959-07-31 |
| DE1009312B (en) | 1957-05-29 |
| NL192946A (en) | |
| NL88297C (en) |
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