GB781727A - Improvements in or relating to a process for melting compounds without substantial decomposition - Google Patents

Improvements in or relating to a process for melting compounds without substantial decomposition

Info

Publication number
GB781727A
GB781727A GB2701854A GB2701854A GB781727A GB 781727 A GB781727 A GB 781727A GB 2701854 A GB2701854 A GB 2701854A GB 2701854 A GB2701854 A GB 2701854A GB 781727 A GB781727 A GB 781727A
Authority
GB
United Kingdom
Prior art keywords
chamber
melting
compound
temperature
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2701854A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to GB2701854A priority Critical patent/GB781727A/en
Publication of GB781727A publication Critical patent/GB781727A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

In the treatment of indium arsenide to produce a semi-conductor the compound is melted in a chamber the coldest point of which is maintained at a temperature between the melting point of the compound, i.e. circa 936 DEG C., and the condensation temperature of arsenic (the most volatile constituent) i.e. circa 485 DEG C. Part of the compound itself or the crucible or the like used for melting the compound may be at the coolest point. The condensation temperature depends to some extent on the surface at the coldest point, i.e. it will be lower when the surface does not facilitate the formation of <PICT:0781727/III/1> <PICT:0781727/III/2> nuclei, e.g. when using very pure quartz, and higher when an affinity exists between the surface and the vapour. The chamber may be sealed (Fig. 1, not shown) or may be provided with a throttling member D which may be at the lowest temperature in the chamber (Fig. 4) or at a higher temperature (Fig. 5). Zone melting, drawing of crystals from a melt, or melting followed by ordinary recrystallization, may be carried out in the chamber.
GB2701854A 1954-09-17 1954-09-17 Improvements in or relating to a process for melting compounds without substantial decomposition Expired GB781727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2701854A GB781727A (en) 1954-09-17 1954-09-17 Improvements in or relating to a process for melting compounds without substantial decomposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2701854A GB781727A (en) 1954-09-17 1954-09-17 Improvements in or relating to a process for melting compounds without substantial decomposition

Publications (1)

Publication Number Publication Date
GB781727A true GB781727A (en) 1957-08-21

Family

ID=6692212

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2701854A Expired GB781727A (en) 1954-09-17 1954-09-17 Improvements in or relating to a process for melting compounds without substantial decomposition

Country Status (1)

Country Link
GB (1) GB781727A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1107198B (en) * 1957-12-31 1961-05-25 Nat Res Dev Process for the refining of a single element or of substances

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1107198B (en) * 1957-12-31 1961-05-25 Nat Res Dev Process for the refining of a single element or of substances

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