GB768740A - Semiconductor crystal device - Google Patents

Semiconductor crystal device

Info

Publication number
GB768740A
GB768740A GB3230954A GB3230954A GB768740A GB 768740 A GB768740 A GB 768740A GB 3230954 A GB3230954 A GB 3230954A GB 3230954 A GB3230954 A GB 3230954A GB 768740 A GB768740 A GB 768740A
Authority
GB
United Kingdom
Prior art keywords
wire
section
semiconductor
diameter
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3230954A
Inventor
Harper Qua North
Justice Neal Carman Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Priority to GB3230954A priority Critical patent/GB768740A/en
Publication of GB768740A publication Critical patent/GB768740A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

768,740. Semiconductor devices. HUGHES AIRCRAFT CO. Nov. 8, 1954, No. 32309/54. Addition to 721,201. Class 37. A semiconductor diode comprises a vitreous envelope consisting of a tubular body section 28 (Fig. 5) and end sections 14 and 54. Ductile lead wires 12 and 50 are sealed to and extend through the end sections, one wire bearing a resilient electrode 48 and the other a semiconductor element 16. The maximum diameter or cross-section dimension of the diode is one-tenth of an inch, the length of the seal between each wire and end section is at least 1.5 times, and the diameter of each end section is at least five times, the diameter of the associated wire. The device may be produced, as shown in Fig. 4, by first sealing glass beads 14 and 54 to "Dumet" wires 12 and 50, and then sealing bead 14 to glass tube 28. A germanium or silicon wafer 16 which has silver and copper, or antimony and gold platings is then fixed to the end of wire 12 by a paste of silver or gold dispersed in a thermosetting resin which is baked. Whisker 48 is spot welded to wire 50, and then bead 54 is sealed to the other end of tube 28. As compared with the parent Specification, the present invention strengthens the end-seals, and avoids the need for annealing and etching the semiconductor surface during manufacture.
GB3230954A 1954-11-08 1954-11-08 Semiconductor crystal device Expired GB768740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3230954A GB768740A (en) 1954-11-08 1954-11-08 Semiconductor crystal device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3230954A GB768740A (en) 1954-11-08 1954-11-08 Semiconductor crystal device

Publications (1)

Publication Number Publication Date
GB768740A true GB768740A (en) 1957-02-20

Family

ID=10336599

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3230954A Expired GB768740A (en) 1954-11-08 1954-11-08 Semiconductor crystal device

Country Status (1)

Country Link
GB (1) GB768740A (en)

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