GB755276A - Improvements in and relating to n-p-n junction devices - Google Patents

Improvements in and relating to n-p-n junction devices

Info

Publication number
GB755276A
GB755276A GB13734/54A GB1373454A GB755276A GB 755276 A GB755276 A GB 755276A GB 13734/54 A GB13734/54 A GB 13734/54A GB 1373454 A GB1373454 A GB 1373454A GB 755276 A GB755276 A GB 755276A
Authority
GB
United Kingdom
Prior art keywords
zone
bath
type
zones
electrolytic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13734/54A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB755276A publication Critical patent/GB755276A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

Landscapes

  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
GB13734/54A 1953-05-11 1954-05-11 Improvements in and relating to n-p-n junction devices Expired GB755276A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US354180A US2922934A (en) 1953-05-11 1953-05-11 Base connection for n-p-n junction transistor

Publications (1)

Publication Number Publication Date
GB755276A true GB755276A (en) 1956-08-22

Family

ID=23392179

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13734/54A Expired GB755276A (en) 1953-05-11 1954-05-11 Improvements in and relating to n-p-n junction devices

Country Status (5)

Country Link
US (1) US2922934A (enExample)
BE (1) BE528756A (enExample)
DE (1) DE1019765B (enExample)
FR (1) FR1114837A (enExample)
GB (1) GB755276A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2937962A (en) * 1957-03-20 1960-05-24 Texas Instruments Inc Transistor devices
DE1194064B (de) * 1956-08-31 1965-06-03 Sony Kabushiki Kaisha Verfahren zum elektrolytischen AEtzen der Ober-flaeche eines mit Legierungselektroden aus einer Bleilegierung versehenen npn-Transistors mit einem Halbleiterkoerper aus Germanium

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL216353A (enExample) * 1956-06-16
US2964830A (en) * 1957-01-31 1960-12-20 Westinghouse Electric Corp Silicon semiconductor devices
US3222654A (en) * 1961-09-08 1965-12-07 Widrow Bernard Logic circuit and electrolytic memory element therefor
BE624959A (enExample) * 1961-11-20

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE436821C (de) * 1926-11-09 Mitsubishi Zosen Kabushiki Kai Verfahren zur elektrolytischen Ablagerung einer elastischen, dehnbaren und zaehgefuegten Eisenschicht
US2044431A (en) * 1932-03-05 1936-06-16 Anaconda Copper Mining Co Method of electroplating metal
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US2428464A (en) * 1945-02-09 1947-10-07 Westinghouse Electric Corp Method and composition for etching metal
NL84061C (enExample) * 1948-06-26
NL153395B (nl) * 1949-02-10 Contraves Ag Verbetering van een bistabiele trekkerschakeling.
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US2656496A (en) * 1951-07-31 1953-10-20 Bell Telephone Labor Inc Semiconductor translating device
US2728034A (en) * 1950-09-08 1955-12-20 Rca Corp Semi-conductor devices with opposite conductivity zones
US2654059A (en) * 1951-05-26 1953-09-29 Bell Telephone Labor Inc Semiconductor signal translating device
BE511293A (enExample) * 1951-08-24
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells
US2655625A (en) * 1952-04-26 1953-10-13 Bell Telephone Labor Inc Semiconductor circuit element
BE519804A (enExample) * 1952-05-09
US2754455A (en) * 1952-11-29 1956-07-10 Rca Corp Power Transistors
US2748325A (en) * 1953-04-16 1956-05-29 Rca Corp Semi-conductor devices and methods for treating same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1194064B (de) * 1956-08-31 1965-06-03 Sony Kabushiki Kaisha Verfahren zum elektrolytischen AEtzen der Ober-flaeche eines mit Legierungselektroden aus einer Bleilegierung versehenen npn-Transistors mit einem Halbleiterkoerper aus Germanium
US2937962A (en) * 1957-03-20 1960-05-24 Texas Instruments Inc Transistor devices

Also Published As

Publication number Publication date
US2922934A (en) 1960-01-26
FR1114837A (fr) 1956-04-17
DE1019765B (de) 1957-11-21
BE528756A (enExample)

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