GB750998A - Improvements in or relating to the making of transistors - Google Patents
Improvements in or relating to the making of transistorsInfo
- Publication number
- GB750998A GB750998A GB7076/54A GB707654A GB750998A GB 750998 A GB750998 A GB 750998A GB 7076/54 A GB7076/54 A GB 7076/54A GB 707654 A GB707654 A GB 707654A GB 750998 A GB750998 A GB 750998A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- type
- donor
- grinding
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 abstract 10
- 239000000463 material Substances 0.000 abstract 5
- 238000000227 grinding Methods 0.000 abstract 4
- 239000012190 activator Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 239000000155 melt Substances 0.000 abstract 2
- 229910000679 solder Inorganic materials 0.000 abstract 2
- 241000295146 Gallionellaceae Species 0.000 abstract 1
- 238000007792 addition Methods 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000002109 crystal growth method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 229910021478 group 5 element Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US750998XA | 1953-03-20 | 1953-03-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB750998A true GB750998A (en) | 1956-06-20 |
Family
ID=22123535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7076/54A Expired GB750998A (en) | 1953-03-20 | 1954-03-11 | Improvements in or relating to the making of transistors |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE527468A (pt) |
| DE (1) | DE1008416B (pt) |
| FR (1) | FR1098296A (pt) |
| GB (1) | GB750998A (pt) |
| NL (1) | NL185041C (pt) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1104074B (de) * | 1957-07-30 | 1961-04-06 | Telefunken Gmbh | Verfahren zum Zerschneiden eines Halbleiter-Einkristalles, z. B. aus Germanium, fuer Halbleiter-anordnungen in duenne Scheiben, deren Schnittflaechen senkrecht zu einer gewuenschten Kristallachse liegen |
| NL238556A (pt) * | 1958-04-24 |
-
0
- BE BE527468D patent/BE527468A/xx unknown
- NL NLAANVRAGE7513831,A patent/NL185041C/xx active
-
1954
- 1954-02-02 DE DEW13173A patent/DE1008416B/de active Pending
- 1954-03-11 GB GB7076/54A patent/GB750998A/en not_active Expired
- 1954-03-19 FR FR1098296D patent/FR1098296A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL185041C (nl) | |
| BE527468A (pt) | |
| FR1098296A (fr) | 1955-07-21 |
| DE1008416B (de) | 1957-05-16 |
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