GB748487A - Electric signal translating devices utilizing semiconductive bodies - Google Patents

Electric signal translating devices utilizing semiconductive bodies

Info

Publication number
GB748487A
GB748487A GB20252/52A GB2025252A GB748487A GB 748487 A GB748487 A GB 748487A GB 20252/52 A GB20252/52 A GB 20252/52A GB 2025252 A GB2025252 A GB 2025252A GB 748487 A GB748487 A GB 748487A
Authority
GB
United Kingdom
Prior art keywords
drain
source
space charge
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20252/52A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB748487A publication Critical patent/GB748487A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB20252/52A 1951-08-24 1952-08-12 Electric signal translating devices utilizing semiconductive bodies Expired GB748487A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US243541A US2744970A (en) 1951-08-24 1951-08-24 Semiconductor signal translating devices

Publications (1)

Publication Number Publication Date
GB748487A true GB748487A (en) 1956-05-02

Family

ID=22919151

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20252/52A Expired GB748487A (en) 1951-08-24 1952-08-12 Electric signal translating devices utilizing semiconductive bodies

Country Status (5)

Country Link
US (1) US2744970A (xx)
BE (1) BE511293A (xx)
FR (1) FR1060119A (xx)
GB (1) GB748487A (xx)
NL (1) NL91981C (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173020A (en) * 1960-06-23 1965-03-09 Robert B Seeds Devices for producing voltage pulses
US4442445A (en) * 1981-11-23 1984-04-10 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier gate field effect transistor

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US3162556A (en) * 1953-01-07 1964-12-22 Hupp Corp Introduction of disturbance points in a cadmium sulfide transistor
US2849342A (en) * 1953-03-17 1958-08-26 Rca Corp Semiconductor devices and method of making them
BE528756A (xx) * 1953-05-11
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
US2984752A (en) * 1953-08-13 1961-05-16 Rca Corp Unipolar transistors
US2888648A (en) * 1954-03-31 1959-05-26 Hazeltine Research Inc Transistor reactance device
NL196121A (xx) * 1954-03-31
NL201235A (xx) * 1954-10-18
US2993998A (en) * 1955-06-09 1961-07-25 Sprague Electric Co Transistor combinations
US2843515A (en) * 1955-08-30 1958-07-15 Raytheon Mfg Co Semiconductive devices
NL210117A (xx) * 1956-08-24
US2913541A (en) * 1956-11-20 1959-11-17 Gen Electric Semiconductor wave filter
DE1094884B (de) * 1956-12-13 1960-12-15 Philips Nv Feldeffekt-Transistor mit einem Halbleiterkoerper aus zwei Zonen entgegengesetzten Leitfaehigkeitstyps und einer Nut zwischen den zwei ohmschen Elektroden und Verfahren zu seiner Herstellung
GB856430A (en) * 1956-12-13 1960-12-14 Mullard Ltd Improvements in and relating to semi-conductive devices
US2939057A (en) * 1957-05-27 1960-05-31 Teszner Stanislas Unipolar field-effect transistors
US3047437A (en) * 1957-08-19 1962-07-31 Int Rectifier Corp Method of making a rectifier
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
BE572049A (xx) * 1957-12-03 1900-01-01
US2951191A (en) * 1958-08-26 1960-08-30 Rca Corp Semiconductor devices
US3063879A (en) * 1959-02-26 1962-11-13 Westinghouse Electric Corp Configuration for semiconductor devices
US3005107A (en) * 1959-06-04 1961-10-17 Hoffman Electronics Corp Photoconductive devices
US3035186A (en) * 1959-06-15 1962-05-15 Bell Telephone Labor Inc Semiconductor switching apparatus
GB955093A (xx) * 1959-07-31
FR1249279A (fr) * 1959-11-07 1960-12-30 Perfectionnements aux procédés de fabrication des transistors à effet de champ àélectrodes annulaires
US3062972A (en) * 1959-11-25 1962-11-06 Bell Telephone Labor Inc Field effect avalanche transistor circuit with selective reverse biasing means
US3051840A (en) * 1959-12-18 1962-08-28 Ibm Photosensitive field effect unit
NL260481A (xx) * 1960-02-08
US3257631A (en) * 1960-05-02 1966-06-21 Texas Instruments Inc Solid-state semiconductor network
US3242394A (en) * 1960-05-02 1966-03-22 Texas Instruments Inc Voltage variable resistor
US3070762A (en) * 1960-05-02 1962-12-25 Texas Instruments Inc Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator
US3152840A (en) * 1960-10-20 1964-10-13 Westinghouse Electric Corp Semiconductor potentiometer
US3210696A (en) * 1961-02-10 1965-10-05 Westinghouse Electric Corp Bridged-t filter
US3148344A (en) * 1961-03-24 1964-09-08 Westinghouse Electric Corp Adjustable resistance-capacitance band pass filter using integral semiconductor having two reverse biased junctions
US3250917A (en) * 1961-04-12 1966-05-10 Rca Corp Logic circuits
NL282170A (xx) * 1961-08-17
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
US3258723A (en) * 1962-01-30 1966-06-28 Osafune ia
US3255360A (en) * 1962-03-30 1966-06-07 Research Corp Field-effect negative resistor
US3265899A (en) * 1962-07-25 1966-08-09 Gen Motors Corp Semiconductor amplifying radiation detector
US3275845A (en) * 1962-12-27 1966-09-27 Motorola Inc Field switching device employing punchthrough phenomenon
BE643857A (xx) * 1963-02-14
US3281699A (en) * 1963-02-25 1966-10-25 Rca Corp Insulated-gate field-effect transistor oscillator circuits
US3290613A (en) * 1963-02-25 1966-12-06 Rca Corp Semiconductor signal translating circuit
DE1228723B (de) * 1963-03-14 1966-11-17 Telefunken Patent Verfahren zum Herstellen eines Unipolartransistors und Aufbau dieses Unipolartransistors
US3327133A (en) * 1963-05-28 1967-06-20 Rca Corp Electronic switching
US3333326A (en) * 1964-06-29 1967-08-01 Ibm Method of modifying electrical characteristic of semiconductor member
US3327525A (en) * 1964-08-10 1967-06-27 Raytheon Co Scribed and notched pn-junction transducers
US3930300A (en) * 1973-04-04 1976-01-06 Harris Corporation Junction field effect transistor
US3969750A (en) * 1974-02-12 1976-07-13 International Business Machines Corporation Diffused junction capacitor and process for producing the same
US4587541A (en) * 1983-07-28 1986-05-06 Cornell Research Foundation, Inc. Monolithic coplanar waveguide travelling wave transistor amplifier
US4800415A (en) * 1984-09-21 1989-01-24 American Telephone And Telegraph Company, At&T Bell Laboratories Bipolar inversion channel device
US6936496B2 (en) 2002-12-20 2005-08-30 Hewlett-Packard Development Company, L.P. Nanowire filament
US7132298B2 (en) * 2003-10-07 2006-11-07 Hewlett-Packard Development Company, L.P. Fabrication of nano-object array
US7223611B2 (en) * 2003-10-07 2007-05-29 Hewlett-Packard Development Company, L.P. Fabrication of nanowires
US7407738B2 (en) * 2004-04-02 2008-08-05 Pavel Kornilovich Fabrication and use of superlattice
US20050241959A1 (en) * 2004-04-30 2005-11-03 Kenneth Ward Chemical-sensing devices
US7683435B2 (en) 2004-04-30 2010-03-23 Hewlett-Packard Development Company, L.P. Misalignment-tolerant multiplexing/demultiplexing architectures
US7247531B2 (en) 2004-04-30 2007-07-24 Hewlett-Packard Development Company, L.P. Field-effect-transistor multiplexing/demultiplexing architectures and methods of forming the same
US20060024814A1 (en) * 2004-07-29 2006-02-02 Peters Kevin F Aptamer-functionalized electrochemical sensors and methods of fabricating and using the same
US7375012B2 (en) * 2005-02-28 2008-05-20 Pavel Kornilovich Method of forming multilayer film

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
NL89371C (xx) * 1948-04-23
US2600500A (en) * 1948-09-24 1952-06-17 Bell Telephone Labor Inc Semiconductor signal translating device with controlled carrier transit times
US2502488A (en) * 1948-09-24 1950-04-04 Bell Telephone Labor Inc Semiconductor amplifier
US2553490A (en) * 1949-02-21 1951-05-15 Bell Telephone Labor Inc Magnetic control of semiconductor currents
BE495936A (xx) * 1949-10-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173020A (en) * 1960-06-23 1965-03-09 Robert B Seeds Devices for producing voltage pulses
US4442445A (en) * 1981-11-23 1984-04-10 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier gate field effect transistor

Also Published As

Publication number Publication date
FR1060119A (fr) 1954-03-30
BE511293A (xx)
US2744970A (en) 1956-05-08
NL91981C (xx)

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