US3162556A
(en)
*
|
1953-01-07 |
1964-12-22 |
Hupp Corp |
Introduction of disturbance points in a cadmium sulfide transistor
|
US2849342A
(en)
*
|
1953-03-17 |
1958-08-26 |
Rca Corp |
Semiconductor devices and method of making them
|
BE528756A
(xx)
*
|
1953-05-11 |
|
|
|
US2811653A
(en)
*
|
1953-05-22 |
1957-10-29 |
Rca Corp |
Semiconductor devices
|
US2984752A
(en)
*
|
1953-08-13 |
1961-05-16 |
Rca Corp |
Unipolar transistors
|
NL196121A
(xx)
*
|
1954-03-31 |
|
|
|
US2888648A
(en)
*
|
1954-03-31 |
1959-05-26 |
Hazeltine Research Inc |
Transistor reactance device
|
NL201235A
(xx)
*
|
1954-10-18 |
|
|
|
US2993998A
(en)
*
|
1955-06-09 |
1961-07-25 |
Sprague Electric Co |
Transistor combinations
|
US2843515A
(en)
*
|
1955-08-30 |
1958-07-15 |
Raytheon Mfg Co |
Semiconductive devices
|
NL210117A
(xx)
*
|
1956-08-24 |
|
|
|
US2913541A
(en)
*
|
1956-11-20 |
1959-11-17 |
Gen Electric |
Semiconductor wave filter
|
DE1094884B
(de)
*
|
1956-12-13 |
1960-12-15 |
Philips Nv |
Feldeffekt-Transistor mit einem Halbleiterkoerper aus zwei Zonen entgegengesetzten Leitfaehigkeitstyps und einer Nut zwischen den zwei ohmschen Elektroden und Verfahren zu seiner Herstellung
|
GB856430A
(en)
*
|
1956-12-13 |
1960-12-14 |
Mullard Ltd |
Improvements in and relating to semi-conductive devices
|
US2939057A
(en)
*
|
1957-05-27 |
1960-05-31 |
Teszner Stanislas |
Unipolar field-effect transistors
|
US3047437A
(en)
*
|
1957-08-19 |
1962-07-31 |
Int Rectifier Corp |
Method of making a rectifier
|
US2869055A
(en)
*
|
1957-09-20 |
1959-01-13 |
Beckman Instruments Inc |
Field effect transistor
|
US3033714A
(en)
*
|
1957-09-28 |
1962-05-08 |
Sony Corp |
Diode type semiconductor device
|
BE572049A
(xx)
*
|
1957-12-03 |
1900-01-01 |
|
|
US2951191A
(en)
*
|
1958-08-26 |
1960-08-30 |
Rca Corp |
Semiconductor devices
|
US3063879A
(en)
*
|
1959-02-26 |
1962-11-13 |
Westinghouse Electric Corp |
Configuration for semiconductor devices
|
US3005107A
(en)
*
|
1959-06-04 |
1961-10-17 |
Hoffman Electronics Corp |
Photoconductive devices
|
US3035186A
(en)
*
|
1959-06-15 |
1962-05-15 |
Bell Telephone Labor Inc |
Semiconductor switching apparatus
|
GB955093A
(xx)
*
|
1959-07-31 |
|
|
|
FR1249279A
(fr)
*
|
1959-11-07 |
1960-12-30 |
|
Perfectionnements aux procédés de fabrication des transistors à effet de champ àélectrodes annulaires
|
US3062972A
(en)
*
|
1959-11-25 |
1962-11-06 |
Bell Telephone Labor Inc |
Field effect avalanche transistor circuit with selective reverse biasing means
|
US3051840A
(en)
*
|
1959-12-18 |
1962-08-28 |
Ibm |
Photosensitive field effect unit
|
NL260481A
(xx)
*
|
1960-02-08 |
|
|
|
US3070762A
(en)
*
|
1960-05-02 |
1962-12-25 |
Texas Instruments Inc |
Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator
|
US3257631A
(en)
*
|
1960-05-02 |
1966-06-21 |
Texas Instruments Inc |
Solid-state semiconductor network
|
US3242394A
(en)
*
|
1960-05-02 |
1966-03-22 |
Texas Instruments Inc |
Voltage variable resistor
|
US3173020A
(en)
*
|
1960-06-23 |
1965-03-09 |
Robert B Seeds |
Devices for producing voltage pulses
|
US3152840A
(en)
*
|
1960-10-20 |
1964-10-13 |
Westinghouse Electric Corp |
Semiconductor potentiometer
|
US3210696A
(en)
*
|
1961-02-10 |
1965-10-05 |
Westinghouse Electric Corp |
Bridged-t filter
|
US3148344A
(en)
*
|
1961-03-24 |
1964-09-08 |
Westinghouse Electric Corp |
Adjustable resistance-capacitance band pass filter using integral semiconductor having two reverse biased junctions
|
US3250917A
(en)
*
|
1961-04-12 |
1966-05-10 |
Rca Corp |
Logic circuits
|
NL282170A
(xx)
*
|
1961-08-17 |
|
|
|
US3287611A
(en)
*
|
1961-08-17 |
1966-11-22 |
Gen Motors Corp |
Controlled conducting region geometry in semiconductor devices
|
US3258723A
(en)
*
|
1962-01-30 |
1966-06-28 |
|
Osafune ia |
US3255360A
(en)
*
|
1962-03-30 |
1966-06-07 |
Research Corp |
Field-effect negative resistor
|
US3265899A
(en)
*
|
1962-07-25 |
1966-08-09 |
Gen Motors Corp |
Semiconductor amplifying radiation detector
|
US3275845A
(en)
*
|
1962-12-27 |
1966-09-27 |
Motorola Inc |
Field switching device employing punchthrough phenomenon
|
BE643857A
(xx)
*
|
1963-02-14 |
|
|
|
US3290613A
(en)
*
|
1963-02-25 |
1966-12-06 |
Rca Corp |
Semiconductor signal translating circuit
|
US3281699A
(en)
*
|
1963-02-25 |
1966-10-25 |
Rca Corp |
Insulated-gate field-effect transistor oscillator circuits
|
DE1228723B
(de)
*
|
1963-03-14 |
1966-11-17 |
Telefunken Patent |
Verfahren zum Herstellen eines Unipolartransistors und Aufbau dieses Unipolartransistors
|
US3327133A
(en)
*
|
1963-05-28 |
1967-06-20 |
Rca Corp |
Electronic switching
|
US3333326A
(en)
*
|
1964-06-29 |
1967-08-01 |
Ibm |
Method of modifying electrical characteristic of semiconductor member
|
US3327525A
(en)
*
|
1964-08-10 |
1967-06-27 |
Raytheon Co |
Scribed and notched pn-junction transducers
|
US3930300A
(en)
*
|
1973-04-04 |
1976-01-06 |
Harris Corporation |
Junction field effect transistor
|
US3969750A
(en)
*
|
1974-02-12 |
1976-07-13 |
International Business Machines Corporation |
Diffused junction capacitor and process for producing the same
|
US4442445A
(en)
*
|
1981-11-23 |
1984-04-10 |
The United States Of America As Represented By The Secretary Of The Army |
Planar doped barrier gate field effect transistor
|
US4587541A
(en)
*
|
1983-07-28 |
1986-05-06 |
Cornell Research Foundation, Inc. |
Monolithic coplanar waveguide travelling wave transistor amplifier
|
US4800415A
(en)
*
|
1984-09-21 |
1989-01-24 |
American Telephone And Telegraph Company, At&T Bell Laboratories |
Bipolar inversion channel device
|
US6936496B2
(en)
|
2002-12-20 |
2005-08-30 |
Hewlett-Packard Development Company, L.P. |
Nanowire filament
|
US7132298B2
(en)
*
|
2003-10-07 |
2006-11-07 |
Hewlett-Packard Development Company, L.P. |
Fabrication of nano-object array
|
US7223611B2
(en)
*
|
2003-10-07 |
2007-05-29 |
Hewlett-Packard Development Company, L.P. |
Fabrication of nanowires
|
US7407738B2
(en)
*
|
2004-04-02 |
2008-08-05 |
Pavel Kornilovich |
Fabrication and use of superlattice
|
US7683435B2
(en)
|
2004-04-30 |
2010-03-23 |
Hewlett-Packard Development Company, L.P. |
Misalignment-tolerant multiplexing/demultiplexing architectures
|
US7247531B2
(en)
|
2004-04-30 |
2007-07-24 |
Hewlett-Packard Development Company, L.P. |
Field-effect-transistor multiplexing/demultiplexing architectures and methods of forming the same
|
US20050241959A1
(en)
*
|
2004-04-30 |
2005-11-03 |
Kenneth Ward |
Chemical-sensing devices
|
US20060024814A1
(en)
*
|
2004-07-29 |
2006-02-02 |
Peters Kevin F |
Aptamer-functionalized electrochemical sensors and methods of fabricating and using the same
|
US7375012B2
(en)
*
|
2005-02-28 |
2008-05-20 |
Pavel Kornilovich |
Method of forming multilayer film
|