GB732605A - Unsymmetrical conducting device, particularly crystal diode - Google Patents

Unsymmetrical conducting device, particularly crystal diode

Info

Publication number
GB732605A
GB732605A GB13660/53A GB1366053A GB732605A GB 732605 A GB732605 A GB 732605A GB 13660/53 A GB13660/53 A GB 13660/53A GB 1366053 A GB1366053 A GB 1366053A GB 732605 A GB732605 A GB 732605A
Authority
GB
United Kingdom
Prior art keywords
rods
germanium
crystal
rings
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13660/53A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB732605A publication Critical patent/GB732605A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

732,605. Semiconductor rectifiers. STANDARD TELEPHONES & CABLES, Ltd. May 15, 1953 [June 27, 1952], No. 13660/53. Class 37. In a crystal diode, the element and electrode are mounted on plugs of polygonal cross-section which are held in an insulated tube by their sharp edges engaging rings attached to the tube. In Fig. 1, the brass rings 2, 2<1> are pushed into the open ends of ceramic tube 1 and rods 3, 3<1> of square cross-section are driven through the centres of rings 2. 2<1>. Rods 3, 3<1> carry the crystal 5 of germanium, silicon or other semiconductor and the whisker electrode 4. Sealing is effected by moulding compound or cement 9, 91. The spaces 6 between rods 3 and tubes 2 enables the crystal cavity to be filled with a suitable compound to render the electrode assembly shock-proof. A large wafer of germanium may be soldered in one operation to the end surfaces of a bunch of rods 3, and then cut so that the rods may be separated, each bearing its portion of germanium.
GB13660/53A 1952-06-27 1953-05-15 Unsymmetrical conducting device, particularly crystal diode Expired GB732605A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES29085A DE973211C (en) 1952-06-27 1952-06-27 Process for equipping angular electrode rods with semiconducting material for the construction of directional conductors

Publications (1)

Publication Number Publication Date
GB732605A true GB732605A (en) 1955-06-29

Family

ID=7479656

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13660/53A Expired GB732605A (en) 1952-06-27 1953-05-15 Unsymmetrical conducting device, particularly crystal diode

Country Status (4)

Country Link
BE (1) BE525569A (en)
DE (1) DE973211C (en)
FR (1) FR65582E (en)
GB (1) GB732605A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE974194C (en) * 1953-04-02 1960-10-13 Standard Elek K Lorenz Ag Process for making barrier cells of very small effective area

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE147373C (en) *
US2538593A (en) * 1949-04-30 1951-01-16 Rca Corp Semiconductor amplifier construction

Also Published As

Publication number Publication date
DE973211C (en) 1959-12-24
BE525569A (en) 1900-01-01
FR65582E (en) 1956-02-28

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