GB726175A - Improvements in photoelectric cells - Google Patents
Improvements in photoelectric cellsInfo
- Publication number
- GB726175A GB726175A GB30666/53A GB3066653A GB726175A GB 726175 A GB726175 A GB 726175A GB 30666/53 A GB30666/53 A GB 30666/53A GB 3066653 A GB3066653 A GB 3066653A GB 726175 A GB726175 A GB 726175A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photo
- selenides
- sulphides
- cadmium
- firing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
Landscapes
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Abstract
726,175. Photo-electric cells. GENERAL ELECTRIC CO. Nov. 5, 1933 [Nov. 5, 1952], No. 30666/53. Class 37. [Also in Group XL(a)] In a photo-electric cell, the electron-emissive cathode 10 is composed of a photo-conducting semi-conductor of elongated configuration, terminating in a point. Satisfactory materials are the sulphides of cadmium, zinc, antimony and molybdenum, the oxides and selenides of cadmium and zinc, and lead telluride. Photo-conductivity may be imparted to compounds by firing for half an hour or longer at 700‹ C. or higher. The sulphides or selenides may be prepared by reacting the metals in vapour form with hydrogen sulphide or selenide vapour in a hot quartz tube. In some cases trace impurities of silver or copper added prior to firing enhance the photo-conductivity. The preferred semi-conductor has a resistivity of 10<SP>6</SP> to 10<SP>8</SP> ohm-cms. in the dark, which is lowered by a factor of 100 or more in light. In operation, emission is concentrated at the point, which is shaped by abrasive or chemical action, or by electron bombardment from a surrounding coil. The anode is a transparent conductive wall coating 13.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US726175XA | 1952-11-05 | 1952-11-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB726175A true GB726175A (en) | 1955-03-16 |
Family
ID=22108747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB30666/53A Expired GB726175A (en) | 1952-11-05 | 1953-11-05 | Improvements in photoelectric cells |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB726175A (en) |
-
1953
- 1953-11-05 GB GB30666/53A patent/GB726175A/en not_active Expired
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5928612B2 (en) | Compound semiconductor solar cell | |
| Hsiao et al. | Field-emission and photoelectrical characteristics of Ga–ZnO nanorods photodetector | |
| CN102453863B (en) | Sputter the method based on the cadmium sulfide layer used in the film photovoltaic device of cadmium telluride | |
| US8124871B2 (en) | Solar cell and its transparent light conversion film | |
| JP5654425B2 (en) | Solar cell | |
| US3105166A (en) | Electron tube with a cold emissive cathode | |
| GB726175A (en) | Improvements in photoelectric cells | |
| GB848961A (en) | Improvements in electroluminescent networks | |
| GB789090A (en) | Improvements in or relating to x-ray image intensifiers | |
| US3121648A (en) | Radiant energy converter | |
| CN102810597A (en) | Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device | |
| CN102312190A (en) | Sputter is used for the method based on the RTB film of the photovoltaic device of cadmium telluride | |
| US2813991A (en) | Electron emitting electrode | |
| US4263056A (en) | Method for the manufacture of light emitting and/or photodetective diodes | |
| GB754752A (en) | Electronic camera tube | |
| GB1198570A (en) | A Photoconductive Target. | |
| GB1519669A (en) | Photoelectric devise | |
| JP2000357449A (en) | Photoelectric surface, secondary electron surface, and electronic tube | |
| US1694190A (en) | Photo-electric cell | |
| SE309076B (en) | ||
| GB364006A (en) | Improvements in and relating to photo-electric apparatus | |
| JPH09213978A (en) | Semiconductor of chalcopyrite structure and photovolatic device therewith | |
| US20170373213A1 (en) | Photovoltaic devices with improved n-type partner and methods for making the same | |
| CN1024234C (en) | Drift mode amorphous silicon photoelectric cathode | |
| GB828207A (en) | Improvements in photoelectric sensing apparatus |