GB723179A - Improvements in or relating to methods of preparing single crystals of semi-conducting materials - Google Patents
Improvements in or relating to methods of preparing single crystals of semi-conducting materialsInfo
- Publication number
- GB723179A GB723179A GB2590752A GB2590752A GB723179A GB 723179 A GB723179 A GB 723179A GB 2590752 A GB2590752 A GB 2590752A GB 2590752 A GB2590752 A GB 2590752A GB 723179 A GB723179 A GB 723179A
- Authority
- GB
- United Kingdom
- Prior art keywords
- hopper
- semi
- crystal
- single crystals
- hammer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2590752A GB723179A (en) | 1953-09-30 | 1953-09-30 | Improvements in or relating to methods of preparing single crystals of semi-conducting materials |
NL181984A NL88128C (fr) | 1953-09-30 | 1953-10-10 | |
FR1084879D FR1084879A (fr) | 1953-09-30 | 1953-10-12 | Cristaux en matières semi-conductrices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2590752A GB723179A (en) | 1953-09-30 | 1953-09-30 | Improvements in or relating to methods of preparing single crystals of semi-conducting materials |
Publications (1)
Publication Number | Publication Date |
---|---|
GB723179A true GB723179A (en) | 1955-02-02 |
Family
ID=10235277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2590752A Expired GB723179A (en) | 1953-09-30 | 1953-09-30 | Improvements in or relating to methods of preparing single crystals of semi-conducting materials |
Country Status (3)
Country | Link |
---|---|
FR (1) | FR1084879A (fr) |
GB (1) | GB723179A (fr) |
NL (1) | NL88128C (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1131187B (de) * | 1958-06-03 | 1962-06-14 | Wacker Chemie Gmbh | Verfahren zum Reinigen, Umkristallisieren und Formen von Metallen, Nichtmetallen undderen Verbindungen oder Legierungen |
CN113337883A (zh) * | 2021-06-09 | 2021-09-03 | 广东民鑫机械设备科技有限公司 | 一种陶瓷生产工艺 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3086850A (en) * | 1959-06-17 | 1963-04-23 | Itt | Method and means for growing and treating crystals |
-
1953
- 1953-09-30 GB GB2590752A patent/GB723179A/en not_active Expired
- 1953-10-10 NL NL181984A patent/NL88128C/xx active
- 1953-10-12 FR FR1084879D patent/FR1084879A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1131187B (de) * | 1958-06-03 | 1962-06-14 | Wacker Chemie Gmbh | Verfahren zum Reinigen, Umkristallisieren und Formen von Metallen, Nichtmetallen undderen Verbindungen oder Legierungen |
CN113337883A (zh) * | 2021-06-09 | 2021-09-03 | 广东民鑫机械设备科技有限公司 | 一种陶瓷生产工艺 |
Also Published As
Publication number | Publication date |
---|---|
FR1084879A (fr) | 1955-01-25 |
NL88128C (fr) | 1958-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52143755A (en) | Laser, zone melting device | |
DK108250C (da) | Fremgangsmåde til seriefremstilling og fyldning af sække og apparat til udførelse af fremgangsmåden. | |
ES348181A1 (es) | Un metodo de manufacturar cristales de carburo de silicio en filamentos. | |
GB1320773A (en) | Method for forming epitaxial crystals or wafers in selected regions of substraes | |
ES2033856T3 (es) | Aparato y metodo para la produccion de productos alimenticios compuestos. | |
GB1148659A (en) | Method and apparatus for preparing group iii-v materials | |
GB778123A (en) | Crystal production | |
GB723179A (en) | Improvements in or relating to methods of preparing single crystals of semi-conducting materials | |
DK77203C (da) | Apparat til fyldning af kornet materiale i sække. | |
GB931992A (en) | Improvements in or relating to methods of manufacturing crystalline semi-conductor material | |
EP0175030A3 (fr) | Croissance de semi-conducteurs et appareil pour cette utilisation | |
Aita et al. | Single crystal growth of lanthanum hexaboride in molten aluminium | |
GB727447A (en) | Formation of p-n junctions | |
GB789736A (en) | Improvements relating to methods of and apparatus for bagging bulk material | |
US3675709A (en) | Apparatus for manufacturing semiconductor substances from germanium-silicon or molybdenum-silicon | |
ES2044865T3 (es) | Procedimiento y dispositivo para fabricar masas rellenadas. | |
GB737527A (en) | A method for the manufacture of semi-conductors having excess-conductive and deficitconductive regions with sharp borders | |
GB915882A (en) | Improvements in or relating to processes for the production of mono-crystalline semi-conductor rods | |
SE385719B (sv) | Forfarande for framstellning av massa fran lignocellulosamaterial i utbytesomradet 70-93 % | |
JPS5234674A (en) | Semiconductor device | |
Trainor et al. | The Control of Resistivity in Pulled Silicon Crystals | |
GB779179A (en) | Improvements in or relating to processes and apparatus for incorporating donor and/or acceptor impurities in semi-conductor elements | |
BE825058A (fr) | Dispositif de fusion par zones sans creuset de barreaux de matiere semi-conductrices | |
CA901079A (en) | Method of producing single crystals of semiconductor material by floating-zone melting, semiconductor single crystal produced by said method and device for carrying out the same | |
FR1264261A (fr) | Dispositif pour la fusion par zone, sans creuset, de barres en matériau semi-conducteur disposées verticalement |