GB721671A - Signal translating devices utilizing semiconductive bodies and methods of making them - Google Patents
Signal translating devices utilizing semiconductive bodies and methods of making themInfo
- Publication number
- GB721671A GB721671A GB29223/50A GB2922350A GB721671A GB 721671 A GB721671 A GB 721671A GB 29223/50 A GB29223/50 A GB 29223/50A GB 2922350 A GB2922350 A GB 2922350A GB 721671 A GB721671 A GB 721671A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- conductivity
- region
- gold
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 7
- 229910052737 gold Inorganic materials 0.000 abstract 7
- 239000010931 gold Substances 0.000 abstract 7
- 239000000463 material Substances 0.000 abstract 7
- 239000000370 acceptor Substances 0.000 abstract 6
- 229910052732 germanium Inorganic materials 0.000 abstract 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 5
- 238000010438 heat treatment Methods 0.000 abstract 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 239000007767 bonding agent Substances 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 229910052697 platinum Inorganic materials 0.000 abstract 2
- 239000011135 tin Substances 0.000 abstract 2
- 229910052718 tin Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 230000000712 assembly Effects 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000004070 electrodeposition Methods 0.000 abstract 1
- 238000009713 electroplating Methods 0.000 abstract 1
- 239000000374 eutectic mixture Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US130268A US2597028A (en) | 1949-11-30 | 1949-11-30 | Semiconductor signal translating device |
| US136038A US2701326A (en) | 1949-11-30 | 1949-12-30 | Semiconductor translating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB721671A true GB721671A (en) | 1955-01-12 |
Family
ID=26828304
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB21282/53A Expired GB721740A (en) | 1949-11-30 | 1950-11-29 | Signal translating devices utilising semiconductive bodies |
| GB29223/50A Expired GB721671A (en) | 1949-11-30 | 1950-11-29 | Signal translating devices utilizing semiconductive bodies and methods of making them |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB21282/53A Expired GB721740A (en) | 1949-11-30 | 1950-11-29 | Signal translating devices utilising semiconductive bodies |
Country Status (7)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2998334A (en) * | 1958-03-07 | 1961-08-29 | Transitron Electronic Corp | Method of making transistors |
Families Citing this family (161)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2869001A (en) * | 1959-01-13 | Welker | ||
| US2841510A (en) * | 1958-07-01 | Method of producing p-n junctions in | ||
| US2770762A (en) * | 1949-04-01 | 1956-11-13 | Int Standard Electric Corp | Crystal triodes |
| NL87381C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1950-03-31 | |||
| NL91400C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1950-06-28 | |||
| US2792538A (en) * | 1950-09-14 | 1957-05-14 | Bell Telephone Labor Inc | Semiconductor translating devices with embedded electrode |
| BE523775A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1950-09-29 | |||
| US2791524A (en) * | 1953-04-03 | 1957-05-07 | Gen Electric | Fabrication method for p-n junctions |
| GB688866A (en) * | 1950-10-19 | 1953-03-18 | Gen Electric Co Ltd | Improvements in or relating to crystal rectifiers |
| US2762953A (en) * | 1951-05-15 | 1956-09-11 | Sylvania Electric Prod | Contact rectifiers and methods |
| US2859140A (en) * | 1951-07-16 | 1958-11-04 | Sylvania Electric Prod | Method of introducing impurities into a semi-conductor |
| US2771382A (en) * | 1951-12-12 | 1956-11-20 | Bell Telephone Labor Inc | Method of fabricating semiconductors for signal translating devices |
| US2736849A (en) * | 1951-12-31 | 1956-02-28 | Hazeltine Research Inc | Junction-type transistors |
| NL175652B (nl) * | 1952-02-07 | Krings Josef | Glijschoen voor een spaninrichting van een greppelbouwinrichting. | |
| DE976709C (de) * | 1952-02-24 | 1964-03-12 | Siemens Ag | Verfahren zur Herstellung eines Halbleiterkristalls mit Zonen verschiedenen Leitungstyps bei A-B-Verbindungen |
| NL176299B (nl) * | 1952-03-10 | Hydrotech Int Inc | Inrichting voor het losneembaar afsluiten van pijpleidingen. | |
| US2842723A (en) * | 1952-04-15 | 1958-07-08 | Licentia Gmbh | Controllable asymmetric electrical conductor systems |
| US2897105A (en) * | 1952-04-19 | 1959-07-28 | Ibm | Formation of p-n junctions |
| NL177655B (nl) * | 1952-04-19 | Johnson & Johnson | Chirurgisch laken. | |
| US2743201A (en) * | 1952-04-29 | 1956-04-24 | Hughes Aircraft Co | Monatomic semiconductor devices |
| US2829422A (en) * | 1952-05-21 | 1958-04-08 | Bell Telephone Labor Inc | Methods of fabricating semiconductor signal translating devices |
| US2714566A (en) * | 1952-05-28 | 1955-08-02 | Rca Corp | Method of treating a germanium junction rectifier |
| BE520380A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1952-06-02 | |||
| US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
| DE1007438B (de) * | 1952-06-13 | 1957-05-02 | Rca Corp | Flaechentransistor nach dem Legierungsprinzip |
| US2793145A (en) * | 1952-06-13 | 1957-05-21 | Sylvania Electric Prod | Method of forming a junction transistor |
| NL299567A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1952-06-14 | |||
| US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
| US2842724A (en) * | 1952-08-18 | 1958-07-08 | Licentia Gmbh | Conductor devices and method of making the same |
| NL180750B (nl) * | 1952-08-20 | Bristol Myers Co | Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten. | |
| US2818536A (en) * | 1952-08-23 | 1957-12-31 | Hughes Aircraft Co | Point contact semiconductor devices and methods of making same |
| DE1212640B (de) * | 1952-10-24 | 1966-03-17 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterbauelements mit einem durch Waermebehandeln zusammengefuegten Halbleiterkoerper |
| US2953730A (en) * | 1952-11-07 | 1960-09-20 | Rca Corp | High frequency semiconductor devices |
| US2836522A (en) * | 1952-11-15 | 1958-05-27 | Rca Corp | Junction type semiconductor device and method of its manufacture |
| US2784121A (en) * | 1952-11-20 | 1957-03-05 | Bell Telephone Labor Inc | Method of fabricating semiconductor bodies for translating devices |
| US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
| BE525386A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1952-12-29 | |||
| US3162556A (en) * | 1953-01-07 | 1964-12-22 | Hupp Corp | Introduction of disturbance points in a cadmium sulfide transistor |
| US2823148A (en) * | 1953-03-02 | 1958-02-11 | Rca Corp | Method for removing portions of semiconductor device electrodes |
| US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
| US2974236A (en) * | 1953-03-11 | 1961-03-07 | Rca Corp | Multi-electrode semiconductor devices |
| US2849342A (en) * | 1953-03-17 | 1958-08-26 | Rca Corp | Semiconductor devices and method of making them |
| US2801347A (en) * | 1953-03-17 | 1957-07-30 | Rca Corp | Multi-electrode semiconductor devices |
| US3066249A (en) * | 1953-04-07 | 1962-11-27 | Sylvania Electric Prod | Junction type semiconductor triode |
| US2822307A (en) * | 1953-04-24 | 1958-02-04 | Sylvania Electric Prod | Technique for multiple p-n junctions |
| US2867732A (en) * | 1953-05-14 | 1959-01-06 | Ibm | Current multiplication transistors and method of producing same |
| US2862787A (en) * | 1953-05-27 | 1958-12-02 | Paul F Seguin | Process and apparatus for the preparation of semi-conductors from arsenides and phosphides and detectors formed therefrom |
| BE529698A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1953-06-19 | |||
| US2792539A (en) * | 1953-07-07 | 1957-05-14 | Sprague Electric Co | Transistor construction |
| US2976426A (en) * | 1953-08-03 | 1961-03-21 | Rca Corp | Self-powered semiconductive device |
| US2836520A (en) * | 1953-08-17 | 1958-05-27 | Westinghouse Electric Corp | Method of making junction transistors |
| US2759855A (en) * | 1953-08-24 | 1956-08-21 | Eagle Picher Co | Coated electronic device and method of making same |
| BE531626A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1953-09-04 | |||
| US2861017A (en) * | 1953-09-30 | 1958-11-18 | Honeywell Regulator Co | Method of preparing semi-conductor devices |
| US3089219A (en) * | 1953-10-19 | 1963-05-14 | Raytheon Co | Transistor assembly and method |
| US2823149A (en) * | 1953-10-27 | 1958-02-11 | Sprague Electric Co | Process of forming barrier layers in crystalline bodies |
| US2844737A (en) * | 1953-10-30 | 1958-07-22 | Rca Corp | Semi-conductive materials |
| US2803569A (en) * | 1953-12-03 | 1957-08-20 | Jacobs Harold | Formation of junctions in semiconductors |
| US2829992A (en) * | 1954-02-02 | 1958-04-08 | Hughes Aircraft Co | Fused junction semiconductor devices and method of making same |
| US2860218A (en) * | 1954-02-04 | 1958-11-11 | Gen Electric | Germanium current controlling devices |
| US3010857A (en) * | 1954-03-01 | 1961-11-28 | Rca Corp | Semi-conductor devices and methods of making same |
| BE536122A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1954-03-05 | |||
| BE536185A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1954-03-05 | 1900-01-01 | ||
| US2788299A (en) * | 1954-03-10 | 1957-04-09 | Sylvania Electric Prod | Method of forming junction transistors |
| US2788300A (en) * | 1954-03-10 | 1957-04-09 | Sylvania Electric Prod | Processing of alloy junction devices |
| US2821493A (en) * | 1954-03-18 | 1958-01-28 | Hughes Aircraft Co | Fused junction transistors with regrown base regions |
| US2846346A (en) * | 1954-03-26 | 1958-08-05 | Philco Corp | Semiconductor device |
| BE536985A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1954-04-01 | |||
| NL197918A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1954-04-01 | |||
| US2976433A (en) * | 1954-05-26 | 1961-03-21 | Rca Corp | Radioactive battery employing semiconductors |
| US2845373A (en) * | 1954-06-01 | 1958-07-29 | Rca Corp | Semi-conductor devices and methods of making same |
| US2936256A (en) * | 1954-06-01 | 1960-05-10 | Gen Electric | Semiconductor devices |
| US2842466A (en) * | 1954-06-15 | 1958-07-08 | Gen Electric | Method of making p-nu junction semiconductor unit |
| BE548647A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1955-06-28 | |||
| NL106130C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1954-06-29 | |||
| US2832898A (en) * | 1954-07-12 | 1958-04-29 | Rca Corp | Time delay transistor trigger circuit |
| NL96809C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1954-07-21 | |||
| US2850412A (en) * | 1954-08-13 | 1958-09-02 | Sylvania Electric Prod | Process for producing germaniumindium alloyed junctions |
| NL190331A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1954-08-26 | 1900-01-01 | ||
| NL199921A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1954-08-27 | |||
| US2992337A (en) * | 1955-05-20 | 1961-07-11 | Ibm | Multiple collector transistors and circuits therefor |
| US2889499A (en) * | 1954-09-27 | 1959-06-02 | Ibm | Bistable semiconductor device |
| US2787564A (en) * | 1954-10-28 | 1957-04-02 | Bell Telephone Labor Inc | Forming semiconductive devices by ionic bombardment |
| NL200888A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1954-10-29 | |||
| US2874341A (en) * | 1954-11-30 | 1959-02-17 | Bell Telephone Labor Inc | Ohmic contacts to silicon bodies |
| DE1073111B (de) * | 1954-12-02 | 1960-01-14 | Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen | Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper |
| US2804405A (en) * | 1954-12-24 | 1957-08-27 | Bell Telephone Labor Inc | Manufacture of silicon devices |
| BE544843A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1955-02-25 | |||
| NL212855A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1955-03-10 | |||
| US3065534A (en) * | 1955-03-30 | 1962-11-27 | Itt | Method of joining a semiconductor to a conductor |
| US2857527A (en) * | 1955-04-28 | 1958-10-21 | Rca Corp | Semiconductor devices including biased p+p or n+n rectifying barriers |
| US2871149A (en) * | 1955-05-02 | 1959-01-27 | Sprague Electric Co | Semiconductor method |
| US2763822A (en) * | 1955-05-10 | 1956-09-18 | Westinghouse Electric Corp | Silicon semiconductor devices |
| US2887415A (en) * | 1955-05-12 | 1959-05-19 | Honeywell Regulator Co | Method of making alloyed junction in a silicon wafer |
| US2941131A (en) * | 1955-05-13 | 1960-06-14 | Philco Corp | Semiconductive apparatus |
| US2995665A (en) * | 1955-05-20 | 1961-08-08 | Ibm | Transistors and circuits therefor |
| US2845374A (en) * | 1955-05-23 | 1958-07-29 | Texas Instruments Inc | Semiconductor unit and method of making same |
| US2785096A (en) * | 1955-05-25 | 1957-03-12 | Texas Instruments Inc | Manufacture of junction-containing silicon crystals |
| US2927222A (en) * | 1955-05-27 | 1960-03-01 | Philco Corp | Polarizing semiconductive apparatus |
| US2993998A (en) * | 1955-06-09 | 1961-07-25 | Sprague Electric Co | Transistor combinations |
| BE547274A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1955-06-20 | |||
| BE547665A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1955-06-28 | |||
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| NL247987A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1958-06-14 | |||
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| FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ | |
| BE569934A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1958-12-18 | |||
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| US1881064A (en) * | 1929-05-28 | 1932-10-04 | Calorizing Company | Carburizing box |
| GB541739A (en) * | 1940-07-16 | 1941-12-09 | Gabor Adam Veszi | Improvements in or relating to photo electric cells |
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| NL64663C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1943-03-22 | |||
| BE594959A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1943-07-28 | |||
| BE476053A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1944-04-10 | |||
| NL130727C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1944-12-14 | |||
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| NL84057C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1948-02-26 | |||
| BE488563A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1948-04-21 | |||
| NL75792C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1948-05-19 | |||
| NL79529C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1948-09-24 | |||
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| DE870418C (de) * | 1950-04-06 | 1953-03-12 | Ilford Ltd | Verfahren zur Herstellung von Pyrazolinverbindungen |
-
0
- NL NL82014D patent/NL82014C/xx active
- BE BE500302D patent/BE500302A/xx unknown
-
1949
- 1949-11-30 US US130268A patent/US2597028A/en not_active Expired - Lifetime
- 1949-12-30 US US136038A patent/US2701326A/en not_active Expired - Lifetime
-
1950
- 1950-08-26 FR FR1024032D patent/FR1024032A/fr not_active Expired
- 1950-11-16 FR FR1029640D patent/FR1029640A/fr not_active Expired
- 1950-11-29 GB GB21282/53A patent/GB721740A/en not_active Expired
- 1950-11-29 GB GB29223/50A patent/GB721671A/en not_active Expired
- 1950-11-30 DE DEW4642A patent/DE961469C/de not_active Expired
- 1950-12-11 CH CH293271D patent/CH293271A/de unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2998334A (en) * | 1958-03-07 | 1961-08-29 | Transitron Electronic Corp | Method of making transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| NL82014C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | |
| DE961469C (de) | 1957-05-16 |
| US2597028A (en) | 1952-05-20 |
| US2701326A (en) | 1955-02-01 |
| BE500302A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | |
| CH293271A (de) | 1953-09-15 |
| GB721740A (en) | 1955-01-12 |
| FR1029640A (fr) | 1953-06-04 |
| FR1024032A (fr) | 1953-03-26 |
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