GB706516A - Improvements in or relating to oscillators, particularly for radio receiving circuits, employing semi-conductor devices - Google Patents
Improvements in or relating to oscillators, particularly for radio receiving circuits, employing semi-conductor devicesInfo
- Publication number
- GB706516A GB706516A GB2386251A GB2386251A GB706516A GB 706516 A GB706516 A GB 706516A GB 2386251 A GB2386251 A GB 2386251A GB 2386251 A GB2386251 A GB 2386251A GB 706516 A GB706516 A GB 706516A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rectifier
- oscillator
- circuit
- oscillations
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D11/00—Super-regenerative demodulator circuits
- H03D11/02—Super-regenerative demodulator circuits for amplitude-modulated oscillations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
- H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
706,516. Semi-conductor oscillators. STANDARD TELEPHONES & CABLES, Ltd. Oct. 3, 1952 [Oct. 12, 1951], No. 23862/51. Class 40 (6). [Also in Group XXXV] An oscillator circuit, particularly for use in super-regenerative or super-heterodyne radio receivers, comprises an N-type crystal rectifier of the kind described and claimed in Specification 706,514 and having a negative-resistance portion to its forward characteristic, a circuit having a reactive-component connected between the elec trodes of the rectifier, and means for biasing the rectifier, to operate over the negative-resistance portion of its characteristic. The crystal used may be of N-type germanium and may be employed either in an L-c oscillatory circuit or in an R-c circuit providing relaxation oscillations. In the super regenerative-receiver shown in Fig. 1 the rectifier 1 is associated with a circuit tuned to resonate, for example, at 100 Mc/s, and comprising an inductive loop 2, 3, coupled to the aerial 5, and a tuning condenser 4. A quenching oscillator, operating for example at 200 Kc/s, comprises a rectifier 13 condenser 14 and resistor 15 and generates relaxation oscillations which are applied to the rectifier 1 to bias it periodically to the negative resistance portion of its characteristic whereupon oscillations of ampliture corresponding to the received signals build up until quenched by the changing bias produced by the relaxation oscillator. In a modification, Fig. 3, the rectifier 37 is used to generate both the radio-frequency and quenching oscillations. The rectifier is associated with condenser 47 and resistor 48 and thus operates as a relaxation oscillator passing periodically through the negative resistance portion of its characteristic whereupon radio-frequency oscillations build up in the tuned circuit 38, 39 in accordance with the signal induced therein from the aerial 40. A superheterodyne receiver, Fig. 2 (not shown) comprises an L-c oscillator similar to that shown in Fig. 1, the output from which is heterodyned with the received signals by means of a conventional crystal rectifier (e.g. a silicon rectifier), the resulting signals being passed to the I.F. amplifying stages which may employ transistor triode amplifiers. Automatic frequency control may be achieved by deriving a direct-current error signal from a frequency discriminator operating at intermediate frequency and applying the same as a bias voltage to the oscillator rectifier. The oscillator circuit may also include a piezo-electric crystal, which may either be tuned to the fundamental of a sub-harmonic of the desired localoscillator frequency. In this case, automatic frequency control cannot be employed.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE514779D BE514779A (en) | 1951-10-12 | ||
GB2386251A GB706516A (en) | 1951-10-12 | 1951-10-12 | Improvements in or relating to oscillators, particularly for radio receiving circuits, employing semi-conductor devices |
CH327537D CH327537A (en) | 1951-10-12 | 1952-10-11 | Radio receiver using crystal rectifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2386251A GB706516A (en) | 1951-10-12 | 1951-10-12 | Improvements in or relating to oscillators, particularly for radio receiving circuits, employing semi-conductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB706516A true GB706516A (en) | 1954-03-31 |
Family
ID=10202527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2386251A Expired GB706516A (en) | 1951-10-12 | 1951-10-12 | Improvements in or relating to oscillators, particularly for radio receiving circuits, employing semi-conductor devices |
Country Status (3)
Country | Link |
---|---|
BE (1) | BE514779A (en) |
CH (1) | CH327537A (en) |
GB (1) | GB706516A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1101622B (en) * | 1956-01-03 | 1961-03-09 | Csf | Semiconductor diode with a PI or NI transition in the semiconductor body |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2912584A (en) * | 1957-03-22 | 1959-11-10 | Mong Maurice D De | Full wave detector |
US3125725A (en) * | 1959-07-20 | 1964-03-17 | chang |
-
0
- BE BE514779D patent/BE514779A/xx unknown
-
1951
- 1951-10-12 GB GB2386251A patent/GB706516A/en not_active Expired
-
1952
- 1952-10-11 CH CH327537D patent/CH327537A/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1101622B (en) * | 1956-01-03 | 1961-03-09 | Csf | Semiconductor diode with a PI or NI transition in the semiconductor body |
Also Published As
Publication number | Publication date |
---|---|
CH327537A (en) | 1958-01-31 |
BE514779A (en) | 1953-04-13 |
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