GB700242A - Electric circuit devices utilizing semi-conductive materials - Google Patents
Electric circuit devices utilizing semi-conductive materialsInfo
- Publication number
- GB700242A GB700242A GB10500/50A GB1050050A GB700242A GB 700242 A GB700242 A GB 700242A GB 10500/50 A GB10500/50 A GB 10500/50A GB 1050050 A GB1050050 A GB 1050050A GB 700242 A GB700242 A GB 700242A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- electrode
- conductor
- disc
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 9
- 239000002184 metal Substances 0.000 abstract 7
- 229910052751 metal Inorganic materials 0.000 abstract 7
- 239000011248 coating agent Substances 0.000 abstract 6
- 238000000576 coating method Methods 0.000 abstract 6
- 238000010276 construction Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910001369 Brass Inorganic materials 0.000 abstract 1
- 229910000906 Bronze Inorganic materials 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000004793 Polystyrene Substances 0.000 abstract 1
- 239000010951 brass Substances 0.000 abstract 1
- 239000010974 bronze Substances 0.000 abstract 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000005323 electroforming Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000227 grinding Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002223 polystyrene Polymers 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
700,242. Semi- - conductor amplifiers. WESTERN ELECTRIC CO., Inc. April 28, 1950 [April 29; 1949], No. 10500/50. Class 37. An electric circuit device comprises a transistor in which the emitter electrode is in such close proximity to the base electrode that the base resistance is substantially lower than the emitter resistance. The arrangement provides improved stability and input impedance. In Fig. 1, a semi-conductor block 1 is provided with a base electrode 2 consisting of a metal film such as rhodium. The emitter electrode 3, which consists of a phosphor bronze wire, bevelled and such that it provides a minute contact area of elliptical shape, is placed very close (e.g..2 mil) to the edge of the base electrode. The collector electrode 4 is similarly shaped to provide a minute elliptical contact area. The metal film 2 may be situated in a recess in the semi-conductor body so that its surface is flush with the surface of the semiconductor, and the semi-conductor surface may be treated before assembly so that a thin P- type layer is formed on the N-type semiconductor block. Fig. 7 shows an alternative form of construction, the semi-conductor being in the form of a thin disc and one side of the disc being coated with metal to form a base electrode 24. The emitter electrode 21 makes contact through a small hole 25 in the metal coating, and the collector electrode 22 engages the opposite face of the disc. Alternatively the metal coating 24 may cover only half the disc surface, the emitter electrode being situated near the edge of the coating. In a further construction, the centre of the disc face bearing the metal coating is provided with a small central boss which penetrates the coating and engages the emitter electrode. A layer of polystyrene may be provided to cover the metal coating. In Fig. 10, a disc shaped block of N-type semi-conductor is provided with three raised portions, the central portion being in contact with a brass rod 48 to form the base electrode, the raised inner ring forming the emitter electrode and the outer ring forming the collector electrode. The emitter and collector rings are formed of P-type conductivity material, which may be produced by nuclear bombardment, the resulting N-P junctions providing the rectifying contacts for these electrodes. Preparation of the semi-conductor material, including etching, washing, drying, grinding, sand blasting and electro-forming processes are described, and references are made to Specifications 694,021, 694,022, 700,232, 700,236, [Group XL(c)], 700,237 and 700,241.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US282522XA | 1949-04-29 | 1949-04-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB700242A true GB700242A (en) | 1953-11-25 |
Family
ID=21842399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB10500/50A Expired GB700242A (en) | 1949-04-29 | 1950-04-28 | Electric circuit devices utilizing semi-conductive materials |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE494348A (en) |
| CH (1) | CH282522A (en) |
| FR (1) | FR1071007A (en) |
| GB (1) | GB700242A (en) |
| NL (2) | NL153177C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL91411C (en) * | 1951-03-10 |
-
0
- NL NL88577D patent/NL88577C/xx active
- BE BE494348D patent/BE494348A/xx unknown
- NL NL153177D patent/NL153177C/xx active
-
1950
- 1950-03-21 FR FR1071007D patent/FR1071007A/en not_active Expired
- 1950-03-27 CH CH282522D patent/CH282522A/en unknown
- 1950-04-28 GB GB10500/50A patent/GB700242A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL153177C (en) | |
| CH282522A (en) | 1952-04-30 |
| FR1071007A (en) | 1954-08-24 |
| NL88577C (en) | |
| BE494348A (en) |
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