BE494348A - - Google Patents

Info

Publication number
BE494348A
BE494348A BE494348DA BE494348A BE 494348 A BE494348 A BE 494348A BE 494348D A BE494348D A BE 494348DA BE 494348 A BE494348 A BE 494348A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE494348A publication Critical patent/BE494348A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
BE494348D 1949-04-29 BE494348A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US282522XA 1949-04-29 1949-04-29

Publications (1)

Publication Number Publication Date
BE494348A true BE494348A (xx)

Family

ID=21842399

Family Applications (1)

Application Number Title Priority Date Filing Date
BE494348D BE494348A (xx) 1949-04-29

Country Status (5)

Country Link
BE (1) BE494348A (xx)
CH (1) CH282522A (xx)
FR (1) FR1071007A (xx)
GB (1) GB700242A (xx)
NL (2) NL153177C (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1014673B (de) * 1951-03-10 1957-08-29 Sylvania Electric Prod Verfahren zur Herstellung halbleitender Germaniumkristalle mit AEtzvertiefungen fuer lichtelektrische Einrichtungen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1014673B (de) * 1951-03-10 1957-08-29 Sylvania Electric Prod Verfahren zur Herstellung halbleitender Germaniumkristalle mit AEtzvertiefungen fuer lichtelektrische Einrichtungen

Also Published As

Publication number Publication date
NL153177C (xx)
CH282522A (de) 1952-04-30
GB700242A (en) 1953-11-25
FR1071007A (fr) 1954-08-24
NL88577C (xx)

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