BE494348A - - Google Patents
Info
- Publication number
- BE494348A BE494348A BE494348DA BE494348A BE 494348 A BE494348 A BE 494348A BE 494348D A BE494348D A BE 494348DA BE 494348 A BE494348 A BE 494348A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US282522XA | 1949-04-29 | 1949-04-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE494348A true BE494348A (xx) |
Family
ID=21842399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE494348D BE494348A (xx) | 1949-04-29 |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE494348A (xx) |
CH (1) | CH282522A (xx) |
FR (1) | FR1071007A (xx) |
GB (1) | GB700242A (xx) |
NL (2) | NL153177C (xx) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1014673B (de) * | 1951-03-10 | 1957-08-29 | Sylvania Electric Prod | Verfahren zur Herstellung halbleitender Germaniumkristalle mit AEtzvertiefungen fuer lichtelektrische Einrichtungen |
-
0
- NL NL88577D patent/NL88577C/xx active
- BE BE494348D patent/BE494348A/xx unknown
- NL NL153177D patent/NL153177C/xx active
-
1950
- 1950-03-21 FR FR1071007D patent/FR1071007A/fr not_active Expired
- 1950-03-27 CH CH282522D patent/CH282522A/de unknown
- 1950-04-28 GB GB10500/50A patent/GB700242A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1014673B (de) * | 1951-03-10 | 1957-08-29 | Sylvania Electric Prod | Verfahren zur Herstellung halbleitender Germaniumkristalle mit AEtzvertiefungen fuer lichtelektrische Einrichtungen |
Also Published As
Publication number | Publication date |
---|---|
NL153177C (xx) | |
CH282522A (de) | 1952-04-30 |
GB700242A (en) | 1953-11-25 |
FR1071007A (fr) | 1954-08-24 |
NL88577C (xx) |