GB666916A - Improvements in or relating to crystal contact devices and to methods of manufacture thereof - Google Patents

Improvements in or relating to crystal contact devices and to methods of manufacture thereof

Info

Publication number
GB666916A
GB666916A GB16241/49A GB1624149A GB666916A GB 666916 A GB666916 A GB 666916A GB 16241/49 A GB16241/49 A GB 16241/49A GB 1624149 A GB1624149 A GB 1624149A GB 666916 A GB666916 A GB 666916A
Authority
GB
United Kingdom
Prior art keywords
contact
rod
semi
tube
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16241/49A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Company PLC
Original Assignee
General Electric Company PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Company PLC filed Critical General Electric Company PLC
Publication of GB666916A publication Critical patent/GB666916A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Measuring Leads Or Probes (AREA)
  • Die Bonding (AREA)
GB16241/49A 1949-06-14 1949-06-17 Improvements in or relating to crystal contact devices and to methods of manufacture thereof Expired GB666916A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2584461X 1949-06-14
GB283223X 1949-06-17

Publications (1)

Publication Number Publication Date
GB666916A true GB666916A (en) 1952-02-20

Family

ID=32232478

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16241/49A Expired GB666916A (en) 1949-06-14 1949-06-17 Improvements in or relating to crystal contact devices and to methods of manufacture thereof

Country Status (6)

Country Link
US (1) US2584461A (enExample)
CH (1) CH283223A (enExample)
DE (1) DE832022C (enExample)
FR (1) FR1020049A (enExample)
GB (1) GB666916A (enExample)
NL (1) NL154199C (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2728881A (en) * 1950-03-31 1955-12-27 Gen Electric Asymmetrically conductive devices
US2609429A (en) * 1950-07-29 1952-09-02 Rca Corp Semiconduction electrode construction
US2666874A (en) * 1950-08-25 1954-01-19 Rca Corp Construction of semiconductor devices
US2757322A (en) * 1951-05-04 1956-07-31 Gen Electric Co Ltd Crystal contact devices
DE896392C (de) * 1951-11-13 1953-11-12 Licentia Gmbh Gehaeuse fuer ein elektrisch unsymmetrisch leitendes System vom Kristalltyp
US2813991A (en) * 1952-11-05 1957-11-19 Gen Electric Electron emitting electrode
US2827598A (en) * 1953-03-19 1958-03-18 Raytheon Mfg Co Method of encasing a transistor and structure thereof
US3066249A (en) * 1953-04-07 1962-11-27 Sylvania Electric Prod Junction type semiconductor triode
US2779901A (en) * 1953-05-15 1957-01-29 Motorola Inc Transistor unit
US2869053A (en) * 1953-05-22 1959-01-13 Motorola Inc Transistor unit
US2861228A (en) * 1953-05-29 1958-11-18 Motorola Inc Semi-conductor unit
US2696575A (en) * 1953-06-05 1954-12-07 Motorola Inc Transistor unit
US2919387A (en) * 1953-06-05 1959-12-29 Texas Instruments Inc Point contact semiconductor device
US3142791A (en) * 1955-12-07 1964-07-28 Motorola Inc Transistor and housing assembly

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US756676A (en) * 1902-11-10 1904-04-05 Internat Wireless Telegraph Company Wave-responsive device.
GB190721408A (en) * 1907-09-26 1908-04-09 William Phillips Thompson An Improved Detector for Wireless Telegraphy.
US2441590A (en) * 1944-03-24 1948-05-18 Bell Telephone Labor Inc Translating device

Also Published As

Publication number Publication date
DE832022C (de) 1952-02-21
FR1020049A (fr) 1953-01-30
NL154199C (enExample)
US2584461A (en) 1952-02-05
CH283223A (de) 1952-05-31

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