GB660382A - Crystal diodes having a point contact device - Google Patents

Crystal diodes having a point contact device

Info

Publication number
GB660382A
GB660382A GB4420/49A GB442049A GB660382A GB 660382 A GB660382 A GB 660382A GB 4420/49 A GB4420/49 A GB 4420/49A GB 442049 A GB442049 A GB 442049A GB 660382 A GB660382 A GB 660382A
Authority
GB
United Kingdom
Prior art keywords
point contact
contact device
feb
capsule
crystal diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4420/49A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie des Freins et Signaux Westinghouse SA
Original Assignee
Compagnie des Freins et Signaux Westinghouse SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie des Freins et Signaux Westinghouse SA filed Critical Compagnie des Freins et Signaux Westinghouse SA
Publication of GB660382A publication Critical patent/GB660382A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Measuring Leads Or Probes (AREA)
  • Springs (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
GB4420/49A 1948-02-18 1949-02-18 Crystal diodes having a point contact device Expired GB660382A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR660382X 1948-02-18

Publications (1)

Publication Number Publication Date
GB660382A true GB660382A (en) 1951-11-07

Family

ID=9010217

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4420/49A Expired GB660382A (en) 1948-02-18 1949-02-18 Crystal diodes having a point contact device

Country Status (4)

Country Link
US (1) US2569570A (xx)
DE (1) DE818654C (xx)
GB (1) GB660382A (xx)
NL (2) NL69303C (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1051341B (de) * 1952-03-03 1959-02-26 Ericsson Telefon Ab L M Kristalldiode fuer Zentimeter- oder Dezimeterwellen

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976651C (de) * 1951-12-05 1964-02-20 Siemens Ag Kristalldiode fuer sehr hohe Frequenzen
DE1021490B (de) * 1953-12-31 1957-12-27 Ibm Deutschland Transistor mit elastisch angeordneten und dicht benachbarten Spitzenelektroden
US2928031A (en) * 1958-09-04 1960-03-08 Bell Telephone Labor Inc Contact member for semiconductor translating device
DE1113718B (de) * 1959-05-15 1961-09-14 Telefunken Patent Halbleiteranordnung mit kleiner Zuleitungsinduktivitaet
US3223903A (en) * 1961-02-24 1965-12-14 Hughes Aircraft Co Point contact semiconductor device with a lead having low effective ratio of length to diameter
US3308355A (en) * 1962-07-30 1967-03-07 Texas Instruments Inc Point contact diode
US3231795A (en) * 1962-10-18 1966-01-25 Bendix Corp Low inductance and capacitance electrical cartridge and method of manufacture

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US689199A (en) * 1901-05-02 1901-12-17 Thomas B Kinraide Electrode.
AT78069B (de) * 1916-12-14 1919-09-10 Lorenz C Ag Kontaktdetektor für die Zwecke der drahtlosen Telegraphie.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1051341B (de) * 1952-03-03 1959-02-26 Ericsson Telefon Ab L M Kristalldiode fuer Zentimeter- oder Dezimeterwellen

Also Published As

Publication number Publication date
NL69303C (xx)
DE818654C (de) 1951-10-25
NL139559C (xx)
US2569570A (en) 1951-10-02

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