GB653737A - Improvements in or relating to method of growing crystals - Google Patents
Improvements in or relating to method of growing crystalsInfo
- Publication number
- GB653737A GB653737A GB16872/47A GB1687247A GB653737A GB 653737 A GB653737 A GB 653737A GB 16872/47 A GB16872/47 A GB 16872/47A GB 1687247 A GB1687247 A GB 1687247A GB 653737 A GB653737 A GB 653737A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystals
- stage
- solution
- pict
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/14—Phosphates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Crystals are grown in two stages: in the first stage seed bodies cut from crystals of the material-to-be-crystallized are planted in a solution of the material and the solution is caused to flow relative to the seed bodies while the temperature is progressively lowered; all the seed crystals thereby grown are removed from the solution and inspected, and only the sound crystals are replanted in solution for the second stage of growth. In the growth of ammonium dihydrogen phosphate and its isomorphs, the yield of sound full-size crystals obtained by this two-stage process is greater than in prior one-stage processes. In an example, seed plates 5 (Fig. 3) cut from crystals of ammonium phosphate with the larger sides <PICT:0653737/III/1> <PICT:0653737/III/2> <PICT:0653737/III/3> <PICT:0653737/III/4> 1.5 inches long, are mounted in a tray 7 (Fig. 5), which is rocked back and forth on a fixed axis, as indicated by the double-arrow, in a chamber (not shown) through which warm air is circulated. An aqueous solution (saturated at 36 DEG C.) of ammonium phosphate at a temperature of 38 DEG C. is introduced into the preheated tray; and the temperature of the circulating air is then gradually lowered to normal room temperature during about 8 days. The crystals thereby grown are removed from the tray, and those which have a clear pyramidal shell 11 (Fig. 4) on one or both ends are replanted with suitable spacing (Fig. 6) for growth into full-size crystals. In this second stage the initial temperature of the solution is about 41 DEG C., and the growing-time is about 45 days. The two-stage process of crystallizing makes possible the use of addition substances in the first stage, which would be deleterious to the product in a one-stage process. Specification 653,736 is referred to.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US653737XA | 1946-06-10 | 1946-06-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB653737A true GB653737A (en) | 1951-05-23 |
Family
ID=22062258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB16872/47A Expired GB653737A (en) | 1946-06-10 | 1947-06-26 | Improvements in or relating to method of growing crystals |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB653737A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0022193A1 (en) * | 1979-06-18 | 1981-01-14 | E.I. Du Pont De Nemours And Company | Improved process for growing crystal of KTiOPO4 and analogues thereof |
-
1947
- 1947-06-26 GB GB16872/47A patent/GB653737A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0022193A1 (en) * | 1979-06-18 | 1981-01-14 | E.I. Du Pont De Nemours And Company | Improved process for growing crystal of KTiOPO4 and analogues thereof |
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