GB653737A - Improvements in or relating to method of growing crystals - Google Patents

Improvements in or relating to method of growing crystals

Info

Publication number
GB653737A
GB653737A GB16872/47A GB1687247A GB653737A GB 653737 A GB653737 A GB 653737A GB 16872/47 A GB16872/47 A GB 16872/47A GB 1687247 A GB1687247 A GB 1687247A GB 653737 A GB653737 A GB 653737A
Authority
GB
United Kingdom
Prior art keywords
crystals
stage
solution
pict
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16872/47A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brush Development Co
Original Assignee
Brush Development Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brush Development Co filed Critical Brush Development Co
Publication of GB653737A publication Critical patent/GB653737A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/14Phosphates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Crystals are grown in two stages: in the first stage seed bodies cut from crystals of the material-to-be-crystallized are planted in a solution of the material and the solution is caused to flow relative to the seed bodies while the temperature is progressively lowered; all the seed crystals thereby grown are removed from the solution and inspected, and only the sound crystals are replanted in solution for the second stage of growth. In the growth of ammonium dihydrogen phosphate and its isomorphs, the yield of sound full-size crystals obtained by this two-stage process is greater than in prior one-stage processes. In an example, seed plates 5 (Fig. 3) cut from crystals of ammonium phosphate with the larger sides <PICT:0653737/III/1> <PICT:0653737/III/2> <PICT:0653737/III/3> <PICT:0653737/III/4> 1.5 inches long, are mounted in a tray 7 (Fig. 5), which is rocked back and forth on a fixed axis, as indicated by the double-arrow, in a chamber (not shown) through which warm air is circulated. An aqueous solution (saturated at 36 DEG C.) of ammonium phosphate at a temperature of 38 DEG C. is introduced into the preheated tray; and the temperature of the circulating air is then gradually lowered to normal room temperature during about 8 days. The crystals thereby grown are removed from the tray, and those which have a clear pyramidal shell 11 (Fig. 4) on one or both ends are replanted with suitable spacing (Fig. 6) for growth into full-size crystals. In this second stage the initial temperature of the solution is about 41 DEG C., and the growing-time is about 45 days. The two-stage process of crystallizing makes possible the use of addition substances in the first stage, which would be deleterious to the product in a one-stage process. Specification 653,736 is referred to.
GB16872/47A 1946-06-10 1947-06-26 Improvements in or relating to method of growing crystals Expired GB653737A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US653737XA 1946-06-10 1946-06-10

Publications (1)

Publication Number Publication Date
GB653737A true GB653737A (en) 1951-05-23

Family

ID=22062258

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16872/47A Expired GB653737A (en) 1946-06-10 1947-06-26 Improvements in or relating to method of growing crystals

Country Status (1)

Country Link
GB (1) GB653737A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022193A1 (en) * 1979-06-18 1981-01-14 E.I. Du Pont De Nemours And Company Improved process for growing crystal of KTiOPO4 and analogues thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022193A1 (en) * 1979-06-18 1981-01-14 E.I. Du Pont De Nemours And Company Improved process for growing crystal of KTiOPO4 and analogues thereof

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