GB647935A - Improvements in or relating to crystal contact devices and to methods of manufacturethereof - Google Patents

Improvements in or relating to crystal contact devices and to methods of manufacturethereof

Info

Publication number
GB647935A
GB647935A GB28689/48A GB2868948A GB647935A GB 647935 A GB647935 A GB 647935A GB 28689/48 A GB28689/48 A GB 28689/48A GB 2868948 A GB2868948 A GB 2868948A GB 647935 A GB647935 A GB 647935A
Authority
GB
United Kingdom
Prior art keywords
crystal
tubes
supporting member
metal
supporting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28689/48A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB27285/48A priority Critical patent/GB674935A/en
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to US124756A priority patent/US2572993A/en
Publication of GB647935A publication Critical patent/GB647935A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

647,935. Non - contact - making relays. GENERAL ELECTRIC CO., Ltd., DOUGLAS, R. W., and JAMES, E. G. Nov. 4, 1948, No. 28689. [Class 40 (iv)] [Also in Group XL (c)] A crystal contact device for use as an amplifier or oscillator comprises a glass envelope through opposite walls of which metal supporting tubes 2, 3 are sealed, supporting members 5, 12 in and fixed to the tubes carrying respectively a crystal and two at least relatively insulated whiskers 8, 9 contacting the crystal at spaced points, and leads 10, 11, 5, one of which may be the crystal supporting member 5, passing into the envelope through the tubes. Preadjustment of contact pressure is thereby facilitated. Alternatively one supporting member and lead for the whiskers may be a metal tube secured within the tube 3, the other lead forming a metal spigot for plugging into a socket. The leads may be moulded into the supporting member 12 or afterwards sealed in holes therein. Specification 646,674, [Group XXXVI], is referred to.
GB28689/48A 1947-10-25 1948-11-04 Improvements in or relating to crystal contact devices and to methods of manufacturethereof Expired GB647935A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB27285/48A GB674935A (en) 1947-10-25 1948-10-20 Drying apparatus and process
US124756A US2572993A (en) 1947-10-25 1949-11-01 Crystal contact device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US674935XA 1947-10-25 1947-10-25

Publications (1)

Publication Number Publication Date
GB647935A true GB647935A (en) 1950-12-28

Family

ID=22076343

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28689/48A Expired GB647935A (en) 1947-10-25 1948-11-04 Improvements in or relating to crystal contact devices and to methods of manufacturethereof

Country Status (1)

Country Link
GB (1) GB647935A (en)

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