GB636248A - Improvements in alloys and rectifiers made thereof - Google Patents

Improvements in alloys and rectifiers made thereof

Info

Publication number
GB636248A
GB636248A GB19884/46A GB1988446A GB636248A GB 636248 A GB636248 A GB 636248A GB 19884/46 A GB19884/46 A GB 19884/46A GB 1988446 A GB1988446 A GB 1988446A GB 636248 A GB636248 A GB 636248A
Authority
GB
United Kingdom
Prior art keywords
overloads
increased
crystal
elements
electrolytically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB19884/46A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Purdue Research Foundation
Original Assignee
Purdue Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US604744A external-priority patent/US2514879A/en
Application filed by Purdue Research Foundation filed Critical Purdue Research Foundation
Publication of GB636248A publication Critical patent/GB636248A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B11/00—Obtaining noble metals
    • C22B11/10—Obtaining noble metals by amalgamating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Contacts (AREA)
  • Conductive Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electroplating Methods And Accessories (AREA)
GB19884/46A 1945-07-13 1946-07-03 Improvements in alloys and rectifiers made thereof Expired GB636248A (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US604744A US2514879A (en) 1945-07-13 1945-07-13 Alloys and rectifiers made thereof
US66946A US2637770A (en) 1945-07-13 1948-12-23 Alloys and rectifiers made thereof
US135747A US2600997A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135749A US2745046A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135746A US2615966A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135745A US2588253A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135748A US2801376A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US136284A US2691577A (en) 1945-07-13 1949-12-31 Alloys and rectifiers made thereof

Publications (1)

Publication Number Publication Date
GB636248A true GB636248A (en) 1950-04-26

Family

ID=27574476

Family Applications (1)

Application Number Title Priority Date Filing Date
GB19884/46A Expired GB636248A (en) 1945-07-13 1946-07-03 Improvements in alloys and rectifiers made thereof

Country Status (4)

Country Link
US (7) US2637770A (ja)
BE (1) BE466591A (ja)
FR (1) FR941699A (ja)
GB (1) GB636248A (ja)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2766152A (en) * 1951-11-16 1956-10-09 Sylvania Electric Prod Method of producing germanium crystals
US2829422A (en) * 1952-05-21 1958-04-08 Bell Telephone Labor Inc Methods of fabricating semiconductor signal translating devices
US2714566A (en) * 1952-05-28 1955-08-02 Rca Corp Method of treating a germanium junction rectifier
US2841860A (en) * 1952-08-08 1958-07-08 Sylvania Electric Prod Semiconductor devices and methods
US2713132A (en) * 1952-10-14 1955-07-12 Int Standard Electric Corp Electric rectifying devices employing semiconductors
US2776920A (en) * 1952-11-05 1957-01-08 Gen Electric Germanium-zinc alloy semi-conductors
US2776367A (en) * 1952-11-18 1957-01-01 Lebovec Kurt Photon modulation in semiconductors
BE531626A (ja) * 1953-09-04
BE533765A (ja) * 1953-12-01
US2860218A (en) * 1954-02-04 1958-11-11 Gen Electric Germanium current controlling devices
US2778802A (en) * 1954-04-26 1957-01-22 Battelle Development Corp Intermetallic compounds of groups iii and v metals containing small amounts of nickel, cobalt or iron
US2940024A (en) * 1954-06-01 1960-06-07 Rca Corp Semi-conductor rectifiers
US2845373A (en) * 1954-06-01 1958-07-29 Rca Corp Semi-conductor devices and methods of making same
US2705192A (en) * 1954-06-04 1955-03-29 Westinghouse Electric Corp Etching solutions and process for etching members therewith
US2871377A (en) * 1954-07-29 1959-01-27 Gen Electric Bistable semiconductor devices
US2916458A (en) * 1954-11-12 1959-12-08 Aerojet General Co Pickling solution
US2809165A (en) * 1956-03-15 1957-10-08 Rca Corp Semi-conductor materials
US2954308A (en) * 1956-05-21 1960-09-27 Ibm Semiconductor impurity diffusion
DE1037015B (de) * 1956-05-21 1958-08-21 Ibm Deutschland Stoerstellenhalbleiter vom N-Typ fuer Transistoren od. dgl.
US2913357A (en) * 1956-09-20 1959-11-17 Union Carbide Corp Transistor and method of making a transistor
US2953529A (en) * 1957-04-01 1960-09-20 Rca Corp Semiconductive radiation-sensitive device
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
DE1160548B (de) * 1957-12-18 1964-01-02 Siemens Ag Verfahren zum Dotieren von halbleitendem Germanium oder Silizium mit Schwefel
DE1205197B (de) * 1958-02-28 1965-11-18 Westinghouse Electric Corp Anordnung zur Steuerung des Zuendkreises elektrischer Entladungsgefaesse mit Hilfe einer Schaltdiode
US2998572A (en) * 1958-08-01 1961-08-29 Sylvania Electric Prod Crystal amplifier
DE1112207B (de) * 1959-02-07 1961-08-03 Siemens Ag Verfahren zur Herstellung eines dotierten Bereiches in einer Halbleiteranordnung
DE1107349B (de) * 1959-06-19 1961-05-25 Licentia Gmbh Steuerung fuer Stromrichter
DE1114949B (de) * 1959-08-27 1961-10-12 Siemens Ag Einrichtung zum Betrieb von einanodigen gittergesteuerten Entladungsgefaessen
US3193364A (en) * 1960-05-20 1965-07-06 American Optical Corp Method of making electronic devices
US3181983A (en) * 1961-03-06 1965-05-04 Sperry Rand Corp Method for controlling the characteristic of a tunnel diode
DE1171536B (de) * 1961-08-25 1964-06-04 Siemens Ag Halbleiteranordnung mit durch Dotierung herabgesetzter Traegerlebensdauer
US3146097A (en) * 1962-04-23 1964-08-25 Nat Res Corp Tin base alloys
NL295918A (ja) * 1962-07-31
US3523222A (en) * 1966-09-15 1970-08-04 Texas Instruments Inc Semiconductive contacts
US3545967A (en) * 1966-09-28 1970-12-08 Aerojet General Co Metal-semiconductor alloys for thin-film resistors
US3930870A (en) * 1973-12-28 1976-01-06 International Business Machines Corporation Silicon polishing solution preparation
US4215577A (en) * 1978-08-28 1980-08-05 Purdue Research Foundation Utilization of diodes as wide range responsive thermometers
US4247579A (en) * 1979-11-30 1981-01-27 General Electric Company Method for metallizing a semiconductor element
US4697202A (en) * 1984-02-02 1987-09-29 Sri International Integrated circuit having dislocation free substrate
US4643589A (en) * 1985-08-09 1987-02-17 Lake Shore Cryotronics, Inc. Thermometry employing gallium aluminum arsenide diode sensor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE317010A (ja) * 1928-10-01
US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
NL64663C (ja) * 1943-03-22
US2530110A (en) * 1944-06-02 1950-11-14 Sperry Corp Nonlinear circuit device utilizing germanium
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
US2514879A (en) * 1945-07-13 1950-07-11 Purdue Research Foundation Alloys and rectifiers made thereof
US2472770A (en) * 1945-11-20 1949-06-07 Sylvania Electric Prod Resistance apparatus for converting mechanical movement into electrical pulses
US2505633A (en) * 1946-03-18 1950-04-25 Purdue Research Foundation Alloys of germanium and method of making same
US2447829A (en) * 1946-08-14 1948-08-24 Purdue Research Foundation Germanium-helium alloys and rectifiers made therefrom

Also Published As

Publication number Publication date
US2588253A (en) 1952-03-04
US2637770A (en) 1953-05-05
BE466591A (ja)
US2801376A (en) 1957-07-30
US2691577A (en) 1954-10-12
FR941699A (fr) 1949-01-18
US2600997A (en) 1952-06-17
US2745046A (en) 1956-05-08
US2615966A (en) 1952-10-28

Similar Documents

Publication Publication Date Title
GB636248A (en) Improvements in alloys and rectifiers made thereof
US2504628A (en) Electrical device with germanium alloys
US2583008A (en) Asymmetric electrical conducting device
US2560792A (en) Electrolytic surface treatment of germanium
Hickmott et al. Electrode effects and bistable switching of amorphous Nb2O5 diodes
GB877026A (en) N-type semiconductors and method of manufacture
DE969491C (de) Halbleiteruebertragungseinrichtung
Bolling et al. Some effects of impurities on grain growth in zone-refined lead
US2447829A (en) Germanium-helium alloys and rectifiers made therefrom
GB1030923A (en) Improvements in or relating to thermoelectric devices
GB1043530A (en) Improvements in or relating to thermoelectric devices
US2916810A (en) Electric contacts
DE1022385B (de) Verwendung von Palladium-Legierungen fuer elektrische Unterbrecherkontakte
GB1001254A (en) Improvements in or relating to semiconductor materials
GB573176A (en) Improvements relating to soldering and brazing
Fukai Electrical resistivity due to vacancies and impurities in aluminium: Band structure effects in the defect scattering in polyvalent metals
DE1134520B (de) Verwendung von auf pulvermetallurgischem Wege hergestellten Legierungen auf Gold-, Iridium- oder Rhodium-Basis als Werkstoff fuer die kontaktgebenden Teile elektrischer Kontakte
US3040191A (en) Switching systems
GB879656A (en) Improvements in or relating to the production of electric semi-conductor devices
FR2301926A1 (fr) Diodes de schottky de puissance protegees en polarisation inverse
US2818537A (en) Germanium diodes
DE1105069B (de) AEtzverfahren eines pn-UEberganges bei der Herstellung einer Halbleiteranordnung
AT232548B (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE1439577A1 (de) Halbleiteranordnung
JPS5246766A (en) Semiconductor device